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Catalog Datasheet	MFG & Type	Document Tags	PDF
1RF9540 Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540 Text: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY	OCR Scan	D0GS40Ö IRF9140/ IRFP9140/9141 IRF9540/ 9541Z IRF/IRFP9140, IRF9540 IRF/IRFP9141, IRF9541 IRF/IRFP9142, 1RF9540 l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220	PDF
IRF130 Abstract: irf131 142SA Text: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure	OCR Scan	D0DS074 IRF130/131/132/133 IRF130 IRF131 IRF132 IRF133 00US435 F--13 142SA	PDF
g4e diode Abstract: IRFA1Z0 Text: DE I T i m m s •SAMSUNG SEMICONDUCTOR INC ^“ IRFA1ZO/1Z3 □0 0S 0b 4 7 I V -o s "- N-CHANNEL PO W ER M O S F E T S FEATURES LOW RoS{on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low Input capacitance Extended safe operating area	OCR Scan	O-126 00US435 F--13 g4e diode IRFA1Z0	PDF
IRF9120 Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121 Text: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 \| ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET	OCR Scan	IRF9120/912110122/9123 IRFP9120/9121 IRF9520/9521 D0054DE IRF/IRFP9120, IRF9520 IRF/IRFP9121, IRF9521 IRF/IRFP9122, IRF9522 IRF9120 IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRFP9121	PDF