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    028N08N Price and Stock

    Infineon Technologies AG IPA028N08N3GXKSA1

    MOSFET N-CH 80V 89A TO220-FP
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    DigiKey IPA028N08N3GXKSA1 Tube
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    Rochester Electronics IPA028N08N3GXKSA1 16,325 1
    • 1 $3.95
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    TME IPA028N08N3GXKSA1 1
    • 1 $4.57
    • 10 $3.63
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    Chip One Stop IPA028N08N3GXKSA1 Tube 2
    • 1 $1.5
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    Infineon Technologies AG IPI028N08N3GHKSA1

    MOSFET N-CH 80V 100A TO262-3
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    DigiKey IPI028N08N3GHKSA1 Tube
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    Infineon Technologies AG IPP028N08N3GHKSA1

    Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP028N08N3GXKSA1)
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    Avnet Americas IPP028N08N3GHKSA1 Tube 16 Weeks 500
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    Rochester Electronics IPP028N08N3GHKSA1 20 1
    • 1 $2.04
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    • 100 $1.92
    • 1000 $1.73
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    Infineon Technologies AG IPP028N08N3 G

    MOSFETs N-Ch 80V 100A TO220-3 OptiMOS 3
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    Mouser Electronics IPP028N08N3 G 5
    • 1 $7.43
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    Infineon Technologies AG IPP028N08N3GXKSA1

    Mosfet, N Ch, 100A, 80V, Pg-To220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0024Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes |Infineon IPP028N08N3GXKSA1
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    Newark IPP028N08N3GXKSA1 Bulk 23 1
    • 1 $7.28
    • 10 $6.54
    • 100 $4.57
    • 1000 $3.5
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    EBV Elektronik IPP028N08N3GXKSA1 17 Weeks 500
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    028N08N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    028N08N

    Abstract: JESD22
    Text: 028N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max 2.8 mΩ ID 89 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPA028N08N3 PG-TO-220-FP 028N08N 028N08N JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: 028N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 80 V RDS(on),max 2.8 mW ID 89 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPA028N08N3 IEC61249-2-21 PG-TO-220-FP 028N08N PDF

    028N08N

    Abstract: IPP02CN08N IPP028N08N3 JESD22 PG-TO220-3
    Text: 028N08N3 G 028N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 2.8 mΩ ID 100 A • Very low on-resistance R DS(on) previous engineering


    Original     		IPP028N08N3 IPI028N08N3 IPP02CN08N PG-TO220-3 PG-TO262-3 028N08N 028N08N IPP02CN08N JESD22 PG-TO220-3 PDF