IPP03N03LB
Abstract: JESD22
Text: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP03N03LB
PG-TO220-3-1
03N03LB
JESD22
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03N03LB
Abstract: MARKING d45
Text: OptiMOS 2 Power-Transistor 03N03LB G 03N03LB G 03N03LB G 03N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level
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IPD03N03LB
IPU03N03LB
IPS03N03LB
IPF03N03LB
PG-TO252-3-11
Q67042-S4260
03N03LB
MARKING d45
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Untitled
Abstract: No abstract text available
Text: 03N03LA G OptiMOS 2 Power-Transistor 03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level
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IPD03N03LA
IPS03N03LA
PG-TO252-3-11
Q67042-S4249
03N03LA
PG-TO251-3-11
Q67042-S4253
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Untitled
Abstract: No abstract text available
Text: 03N03LA G OptiMOS 2 Power-Transistor 03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level
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IPD03N03LA
IPS03N03LA
PG-TO252-3-11
Q67042-S4249
03N03LA
PG-TO251-3-11
Q67042-S4253
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03N03LB
Abstract: No abstract text available
Text: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP03N03LB
PG-TO220-3-1
03N03LB
03N03LB
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smd 7027
Abstract: IPB03N03LA 03N03LA JESD22 PG-TO263-3-2 IPB03N03LA G
Text: 03N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 2.7 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPB03N03LA
PG-TO263-3-2
03N03LA
smd 7027
03N03LA
JESD22
PG-TO263-3-2
IPB03N03LA G
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PG-TO252-3-11
Abstract: 03N03LA IPD03N03LA IPS03N03LA JESD22 P-TO252-3-11 03n03l DSA0026156
Text: 03N03LA G OptiMOS 2 Power-Transistor 03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level
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IPD03N03LA
IPS03N03LA
P-TO252-3-11
P-TO251-3-11
03N03LA
PG-TO252-3-11
03N03LA
JESD22
P-TO252-3-11
03n03l
DSA0026156
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IPB03N03LB
Abstract: JESD22 03N03LB
Text: 03N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 2.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPB03N03LB
PG-TO263-3
PG-TO220-3-1
P-TO263-3
03N03LB
IPB03N03LB
JESD22
03N03LB
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IPP03N03LB
Abstract: JESD22 C3320
Text: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP03N03LB
PG-TO220-3-1
03N03LB
JESD22
C3320
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Untitled
Abstract: No abstract text available
Text: Type 03N03LB G OptiMOS 2 Power-Transistor 03N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)
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IPD03N03LB
IPS03N03LB
PG-TO252-3-11
PG-TO251-3-11
03N03LB
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S4249
Abstract: 03N03LA IPD03N03LA IPS03N03LA JESD22 PG-TO252-3-11
Text: 03N03LA G OptiMOS 2 Power-Transistor 03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level
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IPD03N03LA
IPS03N03LA
PG-TO252-3-11
PG-TO251-3-11
Q67042-S4249
Q67042-S4253
03N03LA
S4249
03N03LA
JESD22
PG-TO252-3-11
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smd 7027
Abstract: No abstract text available
Text: 03N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 2.7 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPB03N03LA
PG-TO263-3-2
Q67042-S4178
03N03LA
smd 7027
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1403V
Abstract: 03N03LA IPI03N03LA IPP03N03LA JESD22
Text: 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 3 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPI03N03LA,
IPP03N03LA
PG-TO262-3-1
PG-TO220-3-1
IPI03N03LA
03N03LA
PG-TO200-3-1
1403V
03N03LA
IPI03N03LA
IPP03N03LA
JESD22
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Untitled
Abstract: No abstract text available
Text: 03N03LA 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 2.7 mΩ ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPB03N03LA
IPI03N03LA,
IPP03N03LA
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Q67042-S4178
03N03LA
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Q67045-A5078
Abstract: 03N03LB
Text: 03N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 2.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPB03N03LB
P-TO263-3
PG-TO220-3-1
P-TO263-3
Q67045-A5078
03N03LB
Q67045-A5078
03N03LB
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Untitled
Abstract: No abstract text available
Text: 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 3 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPI03N03LA,
IPP03N03LA
PG-TO262-3-1
PG-TO220-3-1
IPI03N03LA
PG-TO262-3-1
PG-TO200-3-1
03N03LA
03N03LA
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smd 7027
Abstract: Q67042-S4180
Text: 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max 3 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPI03N03LA,
IPP03N03LA
PG-TO262-3-1
PG-TO220-3-1
IPI03N03LA
PG-TO262-3-1
PG-TO200-3-1
Q67042-S4180
Q67042-S4179
smd 7027
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smd 7027
Abstract: No abstract text available
Text: 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 3 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPI03N03LA,
IPP03N03LA
PG-TO262-3-1
PG-TO220-3-1
IPI03N03LA
PG-TO262-3-1
PG-TO200-3-1
03N03LA
03N03LA
smd 7027
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03N03LB
Abstract: No abstract text available
Text: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP03N03LB
PG-TO220-3-1
Q67045-A5077
03N03LB
03N03LB
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03n03la
Abstract: C3385 Q67042-S4179 IPB03N03LA IPI03N03LA IPP03N03LA smd 7027
Text: 03N03LA 03N03LA, 03N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 2.7 mΩ ID 80 A • N-channel - Logic level
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IPB03N03LA
IPI03N03LA,
IPP03N03LA
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Q67042-S4178
03N03LA
03n03la
C3385
Q67042-S4179
IPB03N03LA
IPI03N03LA
IPP03N03LA
smd 7027
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PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by
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B192-H6780-G10-X-7600
SP000012954
SP000013610
SP000017969
SP000014627
SP000018085
SP000018086
PEF 24628
PSB 21493
siemens PMB 6610
47n60c3
psb 21553
Pmb7725
PEF 22628
PMB6610
psb 50505
PMB 6819
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BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06
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B192-H6780-G9-X-7600
D-81669
VDSL5100i-E
VDSL6100i-E
BCM 4336
2A0565
C2335
2A280Z
C1740 bipolar transistor
transistor A1267
a1273 transistor
c2335 r
2B0565
2b265
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03N03LA
Abstract: IPD03N03LA IPS03N03LA JESD22 P-TO252-3-11
Text: 03N03LA G OptiMOS 2 Power-Transistor 03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level
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IPD03N03LA
IPS03N03LA
P-TO252-3-11
P-TO251-3-11
Q67042-S4249
Q67042-S4253
03N03LA
03N03LA
JESD22
P-TO252-3-11
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IPD03N03LB
Abstract: JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4260
Text: 03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)
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IPD03N03LB
PG-TO252-3-11
P-TO252-3-11
Q67042-S4260
03N03LB
JESD22
PG-TO252-3-11
P-TO252-3-11
Q67042-S4260
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