MHDR1X
Abstract: L3GD20 stm32f103ret6 LSM303DLHC MHDR1X8 stm32f103re STEVAL-MKI109V2 usbdm header 12x2 jp6 10k
Text: STEVAL-MKI119V1 eMotion Win8: STEVAL-MKI109V2 + STEVAL-MKI108V2 demonstration board Data brief Features • Ready to support iNemoEngine_PW8 ■ Compatible with all available ST EMS adapter boards ■ Controlled by the STM32F103RE high performance ARM 32-bit Cortex -M3 CPU
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STEVAL-MKI119V1
STEVAL-MKI109V2
STEVAL-MKI108V2
STM32F103RE
32-bit
DIL24
L3GD20
LSM303DLHC
STEVAL-MKI119V1
MHDR1X
stm32f103ret6
MHDR1X8
STEVAL-MKI109V2
usbdm
header 12x2
jp6 10k
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marking A2 diode SOD 123
Abstract: marking code SOD DEVICE MARKING CODE z5y STPS0540Z
Text: STPS0540-Y Automotive Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ ECOPACK 2 compliant component ■ AEC-Q101 qualified SOD-123 STPS0540ZY Description Single Schottky rectifier suited for switch mode
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STPS0540-Y
AEC-Q101
OD-123
STPS0540ZY
OD-123,
marking A2 diode SOD 123
marking code SOD
DEVICE MARKING CODE z5y
STPS0540Z
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Untitled
Abstract: No abstract text available
Text: STTH8R06-Y Automotive Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching losses ■ K A NC AEC-Q101 qualified D2PAK STTH8R06G-Y Description The STTH8R06, which uses ST Turbo 2 600 V
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STTH8R06-Y
AEC-Q101
STTH8R06G-Y
STTH8R06,
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC CE ALL RIGHTS RESERVED. 1 REVISIONS DIST - P LTR 1. ASSEMBLY SHOWN FOR REFERENCE ONLY. SHIPPED LOOSE PIECE AS SHOWN ON PAGE 2. DESCRIPTION DATE DWN APVD B ECR-06-013320
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ECR-06-013320
ECR-11-022292
ECR-13-011633
12JUN06
03NOV2011
30JUL2013
23JUL2004
12AUG2004
13AUG2004
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Untitled
Abstract: No abstract text available
Text: STEVAL-MKI108V2 L3GD20 and LSM303DLHC 9-axis module for a standard DIL24 socket Data brief Description The STEVAL-MKI108V2 is an adapter board designed to facilitate the evaluation of L3GD20 and LSM303DLHC MEMS devices. The board offers an effective solution for fast system
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STEVAL-MKI108V2
L3GD20
LSM303DLHC
DIL24
STEVAL-MKI108V2
L3GD20
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Untitled
Abstract: No abstract text available
Text: STFI13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in I²PAKFP package Datasheet — production data Features Type VDSS @Tjmax STFI13NM60N 650 V RDS(on) max PTOT ID < 0.36 Ω 11 A 25 W • Fully insulated and low profile package with increased creepage path from pin to heatsink
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STFI13NM60N
O-281)
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Untitled
Abstract: No abstract text available
Text: STL16N65M5 N-channel 650 V, 0.270 Ω, 12 A PowerFLAT 8x8 HV MDmesh™ V Power MOSFET Features Order code VDSS @ TJmax RDS on max ID STL16N65M5 710 V < 0.299 Ω 12 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case • 100% avalanche tested
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STL16N65M5
STL16N65M5
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Untitled
Abstract: No abstract text available
Text: STPS2545C-Y Automotive power Schottky rectifier Datasheet − production data Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified
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STPS2545C-Y
AEC-Q101
STPS2545CGY
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G315Y
Abstract: No abstract text available
Text: STPS3150-Y Automotive power Schottky rectifier Features • AEC-Q101 qualified ■ Negligible switching losses ■ Low forward voltage drop for higher efficiency and extented battery life ■ Low thermal resistance ■ ECOPACK 2 compliant component A Description
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STPS3150-Y
AEC-Q101
STPS3150UY
G315Y
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Untitled
Abstract: No abstract text available
Text: L99PM60J Power management IC with LIN transceiver Features • One 5 V low-drop voltage regulators 100 mA, continuous mode ■ No electrolytic capacitor required on regulator output (only 220 nF ceramic typ.) ■ Ultra-low quiescent current in VBAT-standby
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L99PM60J
J2602
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13nm60n
Abstract: No abstract text available
Text: STFI13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in I²PakFP Preliminary data Features Type VDSS @Tjmax STFI13NM60N 650 V RDS(on) max ID PTOT < 0.36 Ω 11 A 25 W • Fully insulated and low profile package with increased creepage path from pin to heatsink
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STFI13NM60N
13nm60n
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Untitled
Abstract: No abstract text available
Text: STTH1002C-Y Automotive high efficiency ultrafast diode Features A1 • Suited for SMPS K A2 ■ Low losses ■ Low forward and reverse recovery times ■ High junction temperature ■ Low leakage current ■ AEC-Q101 qualified K K K A2 K A1 Description DPAK
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STTH1002C-Y
AEC-Q101
STTH1002CBY
STTH1002CGY
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Untitled
Abstract: No abstract text available
Text: STM8SPLNB1 DiSEqC slave microcontroller for SaTCR based LNBs and switchers Datasheet − production data Features • ■ ■ Clock, reset and supply management – Reduced power consumption, – Safe power on/off management by low voltage detector LVD ,
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16MHz
SO20W
TSSOP20
UFQFPN20
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SaTCR-1
Abstract: No abstract text available
Text: STM8SPLNB1 DiSEqC slave microcontroller for SaTCR based LNBs and switchers Datasheet − production data Features • ■ ■ Clock, reset and supply management – Reduced power consumption, – Safe power on/off management by low voltage detector LVD ,
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16MHz
SO20W
TSSOP20
UFQFPN20
SaTCR-1
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Untitled
Abstract: No abstract text available
Text: STPS2545C-Y Automotive power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified A1 K A2 K A2 A1 Description
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STPS2545C-Y
AEC-Q101
STPS2545CGY
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10nk60
Abstract: 10NK60Z power mosfet 200A
Text: STFI10NK60Z N-channel 600 V, 0.65 Ω, 10 A, Zener-protected SuperMESH Power MOSFET in I²PakFP Preliminary data Features Type VDSS RDS on max STFI10NK60Z 600 V < 0.75 Ω 10 A PTOT ID 35 W • Fully insulated and low profile package with increased creepage path from pin to heatsink
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STFI10NK60Z
10nk60
10NK60Z
power mosfet 200A
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L3GD20
Abstract: LSM303DLHC STEVAL-MKI108V2 LSM303DL LSM303 lsm303dlh LSM303D
Text: STEVAL-MKI108V2 L3GD20 and LSM303DLHC 9-axis module for a standard DIL24 socket Data brief Features • Complete L3GD20 and LSM303DLHC pinout in a standard DIL24 socket ■ Fully compatible with all other available adapter boards ■ RoHS compliant Description
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STEVAL-MKI108V2
L3GD20
LSM303DLHC
DIL24
STEVAL-MKI108V2
LSM303DL
LSM303
lsm303dlh
LSM303D
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STTH5R06B
Abstract: STTH5R06GY 17655
Text: STTH5R06-Y Automotive Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse recovery current ■ Reduces switching losses ■ Low thermal resistance ■ AEC-Q101 qualified K K A A NC NC 2 D PAK STTH5R06G-Y DPAK STTH5R06B-Y
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STTH5R06-Y
AEC-Q101
STTH5R06B-Y
STTH5R06G-Y
STTH5R06,
STTH5R06B
STTH5R06GY
17655
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Untitled
Abstract: No abstract text available
Text: STPS2545C-Y Automotive power Schottky rectifier Datasheet − production data Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified
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STPS2545C-Y
AEC-Q101
STPS2545CGY
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honeywell resistor
Abstract: No abstract text available
Text: VC3D120 Page 1 of 1 HOME ABOUT US KEY INDUSTRIES SERVED PRODUCTS & INFORMATION NEWS & EVENTS SALES & SUPPORT VC3D120 Home : Products : Sensors » Wirewound Resistors » VC Search LOGIN contacts Customer Service narrow your search Technical Support Products
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VC3D120
03-Nov-2011
id/103883/la
honeywell resistor
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1,3nm60n
Abstract: 13nm60n AM03306v1
Text: STFI13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in I²PAKFP package Datasheet — production data Features Type VDSS @Tjmax STFI13NM60N 650 V RDS(on) max PTOT ID < 0.36 Ω 11 A 25 W • Fully insulated and low profile package with increased creepage path from pin to heatsink
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STFI13NM60N
O-281)
1,3nm60n
13nm60n
AM03306v1
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hv 102 st
Abstract: 26NM60N
Text: STL26NM60N N-channel 600 V, 0.160 Ω, 19 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET Features Order code VDSS @ TJmax RDS on max ID STL26NM60N 650 V < 0.185 Ω 19 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case
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STL26NM60N
STL26NM60N
hv 102 st
26NM60N
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STTH1002C-Y
Abstract: STTH1002CB
Text: STTH1002C-Y Automotive high efficiency ultrafast diode Features A1 • Suited for SMPS K A2 ■ Low losses ■ Low forward and reverse recovery times ■ High junction temperature ■ Low leakage current ■ AEC-Q101 qualified K K K A2 K A1 Description DPAK
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STTH1002C-Y
AEC-Q101
STTH1002CBY
STTH1002CGY
STTH1002C-Y
STTH1002CB
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STL18NM60N
Abstract: No abstract text available
Text: STL18NM60N N-channel 600 V, 0.26 Ω typ., 12 A MDmesh II Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features 6 6 6 Order code VDS @ TJmax RDS on max ID STL18NM60N 650 V 0.310 Ω 12 A %RWWRPYLHZ * ' (1) 1. The value is rated according to Rthj-case
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STL18NM60N
DocID018856
STL18NM60N
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