Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION LOC I ALL RIGHTS RESERVED. BY - 20 2 3 TYPICAL APPLICATION 1 REVISIONS DIST 2 P A A1 D DWN APVD FIRST ISSUE 17FEB2010 AV GT REVISED MARKS ON -5 WAS MARKED AC 04OCT2011 AV GT REVISED PER ECR-13-009678
|
Original
|
PDF
|
04OCT2011
ECR-13-009678
18SEP2013
17FEB2010
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST B LTR DESCRIPTION BA2 DWN DATE ECR-13-015529 APVD TN KR 04OCT2013 2008 RECOMMENDED LAND PATTERN FOR INDUCTANCE VALUES 100µH OR HIGHER 10.3 0.3 2.2 2.2 12.7 1.0 11.0 0.5 0.8 2.5 RELEASED FOR PUBLICATION
|
Original
|
PDF
|
ECR-13-015529
04OCT2013
03-Sep-08
3632B
|
BIOS Flash ROM Chip
Abstract: M50FW040 PLCC32 TSOP32
Text: M50FW040 4-Mbit 512 Kb x8, uniform block 3-V supply firmware hub Flash memory Feature summary • Supply voltage – VCC = 3 V to 3.6 V for Program, Erase and Read operations – VPP = 12V for fast Erase (optional) ■ Two interfaces – Firmware hub (FWH) interface for
|
Original
|
PDF
|
M50FW040
33-MHz
BIOS Flash ROM Chip
M50FW040
PLCC32
TSOP32
|
Untitled
Abstract: No abstract text available
Text: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V, 0.8 A Datasheet — production data Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 m > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics
|
Original
|
PDF
|
2N2219AHR
2N2219AHR
|
marking code e3
Abstract: No abstract text available
Text: M95M02-DR 2-Mbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 2 Mb (256 Kbytes) of EEPROM – Page size: 256 bytes SO8N (MN) 150 mil width ■ Write – Byte Write within 10 ms
|
Original
|
PDF
|
M95M02-DR
200-year
marking code e3
|
Untitled
Abstract: No abstract text available
Text: L6480 Fully integrated microstepping motor driver with motion engine and SPI Datasheet − production data Features • Operating voltage: 7.5 V - 85 V ■ Dual full bridge gate driver for N-channel MOSFETs ■ Fully programmable gate driving ■ Embedded Miller clamp function
|
Original
|
PDF
|
L6480
HTSSOP38
1/128-step
|
Untitled
Abstract: No abstract text available
Text: STGP19NC60W N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA General features Type VCES STGP19NC60W 600V VCE sat IC @100°C (max)@25°C < 2.5V 19A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility)
|
Original
|
PDF
|
STGP19NC60W
O-220
|
tqfp 10x10 tray
Abstract: LQFP32 LQFP44 LQFP64 ST72361 ceramic resonator filter 024 marking bidirectional diode sim 900 application
Text: ST72361 8-bit MCU with Flash or ROM, 10-bit ADC, 5 timers, SPI, 2x LINSCI Features • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices
|
Original
|
PDF
|
ST72361
10-bit
64-pin
tqfp 10x10 tray
LQFP32
LQFP44
LQFP64
ST72361
ceramic resonator filter
024 marking bidirectional diode
sim 900 application
|
ad574
Abstract: No abstract text available
Text: Tuesday, Feb 19, 2008 3:27 PM / 12-Bit-ADC with Microprocessor Interface AD574 1.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as
|
Original
|
PDF
|
12-Bit-ADC
AD574
MIL-PRF-38534,
com/AD574
MIL-STD-883
ASD0012706
04-Oct-2001
4-Mar-03
ad574
|
M50FW040
Abstract: PLCC32
Text: M50FW040 4 Mbit 512Kb x8, Uniform Block 3V Supply Firmware Hub Flash Memory • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations ■ – VPP = 12V for Fast Erase (optional) TWO INTERFACES – Firmware Hub (FWH) Interface for embedded
|
Original
|
PDF
|
M50FW040
512Kb
PLCC32
TSOP40
M50FW040
PLCC32
|
cpu 226
Abstract: ST72 ST72361 TQFP32 TQFP44 TQFP64 TIM16 062d
Text: ST72361 8-BIT MCU WITH FLASH OR ROM, 10-BIT ADC, 5 TIMERS, SPI, 2x LINSCI • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices
|
Original
|
PDF
|
ST72361
10-BIT
64-pin
21places
cpu 226
ST72
ST72361
TQFP32
TQFP44
TQFP64
TIM16
062d
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C 1 creo 20 ALL RIGHTS RESERVED. BY - COPYRIGHT20 2 3 Creo Parametric 2.0 REVISIONS P DO NOT REVISE EXCEPT BY CAD LTR C DESCRIPTION DATE REVISED DESIGN ECO-13-018731 DWN NCL 04DEC2013 APVD GOJ 25,3 D
|
Original
|
PDF
|
ECO-13-018731
04DEC2013
04OCT2000
05OCT2000
|
mb622
Abstract: led moving message display components joystick switch MB623 ST7LITE39 moving message display with key board lcd message using rf led message board circuits message display on LED scrolling led small
Text: UM0450 User manual Getting started with the SN2X-PRIMER kit Overview The SN2X-PRIMER kit represents a ready-to-run ZigBee network provided with two network nodes acting as the Coordinator and Router in compliance with standard ZigBee® specifications. Definitions for Coordinator, Router, and other ZigBee® concepts are provided
|
Original
|
PDF
|
UM0450
mb622
led moving message display components
joystick switch
MB623
ST7LITE39
moving message display with key board
lcd message using rf
led message board circuits
message display on LED
scrolling led small
|
E250NS10
Abstract: st 358 st marking code STE250NS10
Text: STE250NS10 N-channel 100 V, 0.0045 Ω, 220 A, ISOTOP STripFET Power MOSFET Features Type VDSS STE250NS10 100 V • Standard threshold drive ■ 100% avalanche tested RDS on ID <0.0055 Ω 220 A Description ISOTOP This Power MOSFET is the latest development of
|
Original
|
PDF
|
STE250NS10
STE250ny
E250NS10
st 358
st marking code
STE250NS10
|
|
K129
Abstract: TSV6191 SC70-5 v619 k129 amplifier K110 V6192I
Text: TSV6191, TSV6191A, TSV6192, TSV6192A Rail-to-rail input/output 10 A, 450 kHz CMOS operational amplifiers Features TSV6191ILT - TSV6191ICT • Rail-to-rail input and output ■ Low power consumption: 10 µA typ at 5 V ■ Low supply voltage: 1.5 to 5.5 V
|
Original
|
PDF
|
TSV6191,
TSV6191A,
TSV6192,
TSV6192A
TSV6191ILT
TSV6191ICT
OT23-5/SC70-5
TSV6192IST
TSV6192ID/DT
K129
TSV6191
SC70-5
v619
k129 amplifier
K110
V6192I
|
LQFP44
Abstract: TDA7407 TDA7407TR
Text: TDA7407 Advanced car signal processor Features ● Fully integrated signal processor optimized for car radio applications ● Fully programmable by i2c bus ● Includes audioprocessor, stereo decoder with noise blanker and multipath detector ● Softmute function
|
Original
|
PDF
|
TDA7407
LQFP44
TDA7407
TDA7460/61.
TDA7407TR
LQFP44
TDA7407TR
|
transistor EP 430
Abstract: BA157 STC03DE150 BA157 equivalent
Text: STC03DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 3 A - 0.55 W Figure 1: Package Table 1: General Features n n n n VCS ON IC RCS(ON) 1V 1.8 A 0.55 W LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1500 V
|
Original
|
PDF
|
STC03DE150
STC03DE150
O247-4L
transistor EP 430
BA157
BA157 equivalent
|
Untitled
Abstract: No abstract text available
Text: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V
|
Original
|
PDF
|
M68AR024D
TFBGA48
|
N3NF06L
Abstract: STN3NF06L
Text: STN3NF06L N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06L 60V <0.1Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive
|
Original
|
PDF
|
STN3NF06L
OT-223
OT-223
STN3NF06L
N3NF06L
|
Untitled
Abstract: No abstract text available
Text: M95128 M95128-W M95128-R 128 Kbit serial SPI bus EEPROM with high speed clock Features • Compatible with SPI bus serial interface positive clock SPI modes ■ Single supply voltage: – 4.5 to 5.5 V for M95128 – 2.5 to 5.5 V for M95128-W – 1.8 to 5.5 V for M95128-R
|
Original
|
PDF
|
M95128
M95128-W
M95128-R
M95128
M95128-W
M95128-R
40-year
|
STGP19NC60WD
Abstract: No abstract text available
Text: STGP19NC60W N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA Features Type VCES STGP19NC60W 600V VCE sat IC @100°C (max)@25°C < 2.5V 22A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility)
|
Original
|
PDF
|
STGP19NC60W
O-220
O-220
STGP19NC60W
STGP19NC60WD
|
N3NF06
Abstract: No abstract text available
Text: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description
|
Original
|
PDF
|
STN3NF06
OT-223
OT-223
STN3NF06
N3NF06
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWI NG IS UNPUBLISHED. BY C O P Y R I G HT 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3HTS LOC RESERVED. REV I S I O N S D I ST FT LTR DE S C R I P T I O N DWN DATE REVISED EC 0 G 3 B - 0 7 4 6 - 0 4 04OCT2OO4 SW REVISED PER E C O - 06 - 2 70 3
|
OCR Scan
|
PDF
|
IMAR200U
5FEB200
27JUL2004
|
BAS 3020
Abstract: No abstract text available
Text: 2 THIS DRAWING IS UNPUBLISHED. BY C O P Y R I G HT 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3HTS LOC r CONTACT \T s f1 REV I S I O N S D I ST AD RESERVED. 47 LTR DE S C R I P T I O N V APVD I 3J1JN00 MDL MDL R E V P E R EC O U I B - O I 6 2 - 0 I
|
OCR Scan
|
PDF
|
3J1JN00
04OCT2
27jjm
I20795
MAR200Ü
BAS 3020
|