THD6924
Abstract: THD6919 THD6916 041 itt diode THD6916 allegro Zener diode itt THZ825A THZ827A itt 041 Zener Diodes 6.2 V
Text: ALLEGRO MICROSYSTEMS INC bbE D • 05D433A QQDbS35 E S 3 ■ ALGR DIODES Z en er D io d e s T em perature - Com pensated Device Type Temperature Coefficient Test Max. Temperatures VZ@ 'z r Z z T @ lz T Nom. 'Z T Max. V (mA) (Í2) ( + ppm/ C) (°C) ( ± mV/°C)
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50433A
QQDbS35
THZ825A
THZ827A
THD6916
THD6919
THD6924
0SGH33Ã
041 itt diode
THD6916 allegro
Zener diode itt
itt 041
Zener Diodes 6.2 V
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AUO-PL321.15
Abstract: itt+zx+15 DIODE+C06+15 murata+filter+cfj455k+15 B456+F+15 zener+phc+15
Text: ALL E GR O M I C R O S Y S T E M S Ö514019 SPRAGUE. INC ^3 D • 05D433S SEMICONDS / ICS 0 0 Q 3 h l 0 b ■ ALGR 93D 03610 ]> SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs E LE C T R IC A L CH ARACTERISTICS at TA = 25°C VgS OH Limils
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05D433S
TMPF4858A
TMPF4859
TMPF4859A
TMPF4860
TMPF4860A
TMPF4861
TMPF4861A
TMPF4867
TMPF4868
AUO-PL321.15
itt+zx+15
DIODE+C06+15
murata+filter+cfj455k+15
B456+F+15
zener+phc+15
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Untitled
Abstract: No abstract text available
Text: AL L E G R O M I C R O S Y S T E M S INC T3 8 5 1 4 0 1 9 S P R A GU E. D • 05D433Ö DGDBSTÔ S E M I C O N D S / ICS T ■ ALGR 9 3 D 0 3 5 98 J> _ ' ^ ¿ 7 - 1 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘M PS’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C
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05D433Ã
MPSD51
MPSD52
MPSD53
MPSD54
MPSD55
MPSD56
MPSH81
MPSL51
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1N3070
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 ]> 05D433A 0DG37T1 3 • T -9 1 -0 1 PROCESS TSO Process TSO High-Speed Switching Diode P ro ce ss T S O produces a gold-doped silicon epi taxial diode with 1N3070 high-speed sw itching char acteristics. It has a typical breakdow n-voltage rating
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05DM33fl
DDG37T1
T-91-Ã
1N3070
100mA
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A1396
Abstract: No abstract text available
Text: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper
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05G433A
1000mA
00090sa
A1396
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Untitled
Abstract: No abstract text available
Text: ALL E GR O MICROSYSTEMS INC T3 D • 05D433Ô 00037SS PR O CESS NJ26 T ■ ALGR T -9 1 -0 1 Process NJ26 N-Channel Junction Field-Effect Transistor Process NJ26 is an N-channel junction field-effect transistor designed for general-purpose amplifier ap plications at frequencies of up to 450 MHz.
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05D433Ã
00037SS
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2n3904 2n3906
Abstract: bcy71 ALTERNATIVE 2N3904 geometry 2n3251a THC3251A
Text: BIPOLAR TRANSISTORS AND GEOMETRIES ELECTRICAL CHARACTERISTICS at TA = + 25°C *CBO 'c Max. v * BRJCBO Polarity (mA (V) Allegro Type V (V) Max. V Ib (V) (nA) (V) @ v rr 00 2N2222A THC2222A NPN 800 75 40 6.0 10 60 10 3.0 2N2484 THC2484 NPN 50 60 60 6.0
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2N2222A
2N2484
2N2907A
2N3251A
2N3904
2N3906
2N4401
2N4403
BC847C
BCY71
2n3904 2n3906
bcy71 ALTERNATIVE
2N3904 geometry
THC3251A
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603 transistor npn
Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type
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000b515
2N918
2N2222A
2N2369
2N2484
2N2907A
2N2945
2N3019
2N3117
2N3251A
603 transistor npn
2N3906 DS
transistor BC 312
603 transistor npn dj
bipolar BC transistor
BC847C di
PN 2n2222A
2n3904 2n3906
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Untitled
Abstract: No abstract text available
Text: AM SIGNAL PROCESSOR Providing the AM signal processing functions for an electronicallytuned AM receiver ETR , the ULN3841A includes a balanced mixer, buffered local oscillator, IF amplifier, AM detector, scan control detec tors, and a switchable voltage regulator. The addition of a JFET
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ULN3841A
M68465.
M684131.
GSD433Ã
0S0M33Ã
RWOS-6A7894AO,
7TRS-A5609AO
7LC-502112N4,
7NRES-A5622AAG,
7HN-60064CY
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603 transistor npn
Abstract: BT 316 transistor
Text: ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i • DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V T BR CBO V ’ (BR)CEO V ¥(BR)EBO Max. (V) (nA) 'cEO @ V CB Max. @ V CE (V) (nA) (V) — — — — — —
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DSDH33Ã
Q00bS17
D40D11
THC40D11
D41D11
THC41D11
0S0433fl
05D433fl
603 transistor npn
BT 316 transistor
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Untitled
Abstract: No abstract text available
Text: 8-C H AN N EL SOURCE D R IV E R S This versatile family of integrated circuits will work with many combinations of logic- and load-voltage levels, meeting interface requirements beyond the capabilities of standard logic buffers. Series UDN2580A/LW source drivers can drive incandescent, LED, or vacuum
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UDN2580A/LW
2580/85L
25S0/85A
UDN2580A
UDN2580LW
DSD433Ã
00D77b3
0S0433S
UDN2580A
B-1458A
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EM- 546 motor
Abstract: No abstract text available
Text: HIGH-CURRENT HALF-BRIDGE M OTOR DRIVER Designed for use as a general-purpose motor driver, the UDN and UDQ2943Z half-bridge drivers combine high-current sink and source drivers with logic stages, level shifting, diode transient protection, and a voltage regulator for single-supply operation. Capable of operating
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UDQ2943Z
WP-024
EP-053
EP-055
05D433A
EM- 546 motor
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Untitled
Abstract: No abstract text available
Text: ' ’W • ' ' '' SMOKE D ETEC TO R W IT H IN TE RC O N N E C T NO CONNECT. | I/O 2 LOW -VSET 3 NO CONNECT. 4 LED + SUPPLY 16 1 GUARD2 NC LOGIC NC OSC. & TIMING 5 6 I V DD HORN DRIVER TT| DETECT. IN J4~1 G UARD t ~13~| SENSITIVITY SET J 2~l OSC. CAP. T n HORN 2
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PC-004-1
A5354CA
0S0433fl
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL CHARACTERISTICS at I At = 25°C V BR CBO VIBRJCEO V(BR)EBO Max. Device Type Marking (V ) TMPT2907A 2F 60 60 TMPT3906 2A 40 40 TMPT4403 2T 40 40 5.0 TMPT5087 2Q 50 50 _ TMPT5401 2L 160 150 5.0 TMPTA56 2G 80 80 4.0 100 NOTES: (V) v CB h FE 'c @ V CE Max. @ lc
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TMPT2907A
TMPT3906
TMPT4403
TMPT5087
TMPT5401
TMPTA56
05D433Ã
000fl33fl
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ULN8131A
Abstract: ULN8131LW W157 ha1619
Text: 27467.2’ jLafeJ* A „fcT l* f. r •*■ Y ■I* *# - ■ *v ^ r- ’ PR E C ISIO N SUPERVISORY SYSTEM S M O N ITO R Capable of monitoring four dc power lines, the ULN8131A and ULN8131LW are power-fault monitors for both under-voltage and over-voltage conditions. Two of the four inputs are designed to
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ULN8131A
ULN8131A
ULN8131LW
D5DM33A
W157
ha1619
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TMPZ5254
Abstract: No abstract text available
Text: NER DIO DE SOT-23/TO -236AB ‘TMPZ’ ZENER DIO DES ELECTRICAL CHARACTERISTICS at T A. = 25°C Zener Voltage Device Min. Nom. Max. Leakage Current Zener Impedance Max @VR Max. ZCT Marking V (V) (V) @'zr (mA) (HA) (V) (Q) @'zr (mA) Pinning Type TMPZ5230
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OT-23/TO
-236AB
TMPZ5230
TMPZ5231
TMPZ5232
TMPZ5234
TMPZ5236
TMPZ5237
BZX84â
BZX84C5V1
TMPZ5254
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ULQ2824A
Abstract: ULN 2595 A ULN2804A
Text: HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS Featuring continuous load current ratings to 500 mA for each of the eight drivers, the Series ULN28xxA and ULQ28xxA high-voltage, high-current Darlington arrays are ideally suited for interfacing be tween low-level logic circuitry and multiple peripheral power loads.
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ULN28xxA
ULQ28xxA
ULx2803A
ULx2823A
ULQ2824A
ULN 2595 A
ULN2804A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY ISSUE 8187 Subject to chanos without notic } Januarv 12 1995 Designed specifically to meet the requirement for extended opera tion of battery-powered equipment such as cordless and cellular telephones, the A8187SLT voltage regulator offers the reduced dropout
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A8187SLT
05QM33fi
MA-009-3
000bL
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Untitled
Abstract: No abstract text available
Text: 3-PHASE BRUSHLESS D C M OTOR CONTROLLERI DRIVER W ITH LINEAR CURRENT CONTROL _ AND POWER DMOS OUTPUTS The A8925CEB is a DMOS three-phase brushless dc motor con troller/driver designed for use in W inchester disk drives and other data storage applications. The power output stages are capable of ±4 A
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A8925CEB
PP-034
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Untitled
Abstract: No abstract text available
Text: HIGH-CURRENT HALF-BRIDGE PRINTHEAD/MOTOR DRIVER—WITH INTERNAL CURRENT SENSING AND CONTROL The UDN2961B and UDN2961W are 3.4 A half bridges designed specifically for driving solenoid printheads, stepper motors, and dc motors. The UDN2961B/W consists of a power source driver output,
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UDN2961B
UDN2961W
UDN2961B/W
UDN2961B
PP-035
D5Q433fi
0QD7612
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Untitled
Abstract: No abstract text available
Text: DUAL FULL-BRIDGE PWM MOTOR DRIVER The UDN2916B, UDN2916EB, and UDN2916LB motor drivers are designed to drive both windings of a bipolar stepper motor or bidirectionally control two dc motors. Both bridges are capable of sustaining 45 V and include internal pulse-width modulation PWM
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UDN2916B,
UDN2916EB,
UDN2916LB
2916B
UDN2916B/EB/LB
05D433A
777cl
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A3506
Abstract: No abstract text available
Text: , and Data Sheet 27501.1 , 3506 3507 3508 RATIOMETBIC, LINEAR H ALL-EFFECT SENSORS FOR HIGH-TEMPERATVRE OPERATION The A3506-, A3507-, and A3508- comprise a family of sensitive, temperature-stable linear Hall-effect sensors. Ratiometric, linear Hall-effect sensors provide a voltage output that is proportional to the
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A3506-,
A3507-,
A3508-
MH-014A
A3506
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lc 945 transistor
Abstract: transistor LC 945 2N3904 2N3904 F14 4102 transistor 2n3904 TRANSISTOR PNP transistor 4103
Text: ALLE&RO N I C R OSYSTEMS INC T3D » 0504330 0003733 0 • AL6R PROCESS TVO Process TVO NPN High-Speed Switching Transistor Process TVO is an NPN double-diffused silicon epitaxial planar device with gold diffusion. It is used as a general-purpose switch and amplifier. The PNP
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GH-022
Abstract: UGN3132LL 0091H GH-023 hall 3133 PH-003A MH-002-2
Text: -> • \ , -H * . ■ *■■■■»> - v 4 v ,' V + r 1 % 'V - ; \ ' V rv ' j , v + * u ' . . V 'U T + v W Ü - ’ 1 ' ■'>^ +• V 'r i r .P » ;* r + l a - I r + 'l -i ♦ + , . H * I * . ' +1»-: 1 . * h. * . *' . .♦ . ULTRASENSITIVE BIPOLAR HALL-EFFECT SWITCHES
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PH-003A
GH-024
GH-023
DSG433fl
MH-008-2A
MH-002-2
MH-011-2A
SD433Ã
GH-022
UGN3132LL
0091H
GH-023
hall 3133
PH-003A
MH-002-2
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