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    Untitled

    Abstract: No abstract text available
    Text: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V, 0.8 A Datasheet — production data Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 m > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics


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    PDF 2N2219AHR 2N2219AHR

    ULGA52

    Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
    Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications


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    PDF NAND04G-B2D NAND08G-BxC 2112-byte/1056-word ULGA52 NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C

    KDS 4.000 Crystal

    Abstract: AN3060 digital weight KDS crystal 8.000 quartz crystal kds 4.000 CXO 049 KDS 4.000 oscillator citizen 120 Digital Alarm Clock quartz kds kds 07
    Text: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital


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    PDF M41T82 M41T83 SOX18) QFN16, VFQFPN16) M41T83S M41T83R M41T83Z KDS 4.000 Crystal AN3060 digital weight KDS crystal 8.000 quartz crystal kds 4.000 CXO 049 KDS 4.000 oscillator citizen 120 Digital Alarm Clock quartz kds kds 07

    soc2920ahrb

    Abstract: 2N2920AHR marking code SMD ic N1 smd transistor st smd diode marking code all ic datasheet in one pdf file NV SMD TRANSISTOR smd diode order marking code stmicroelectronics transistor marking N1 TRANSISTOR SMD MARKING CODES
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V - 0.03 A Features BVCEO 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor ■ Linear gain characteristics ■


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    PDF 2N2920AHR 2N2920AHR soc2920ahrb marking code SMD ic N1 smd transistor st smd diode marking code all ic datasheet in one pdf file NV SMD TRANSISTOR smd diode order marking code stmicroelectronics transistor marking N1 TRANSISTOR SMD MARKING CODES

    2N2219AT1

    Abstract: st marking code 2N2219AHR
    Text: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


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    PDF 2N2219AHR 2N2219AHR 2N2219AT1 st marking code

    ma 7050

    Abstract: GR-1089 SMP100LC SMP100LC-270 TRISIL SMP st L35
    Text: SMP100LC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage range from 8 V to 400 V ■ Low capacitance from 20 pF to 45 pF @ 2 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min


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    PDF SMP100LC DO-214AA) UL60950, UL1459. GR-1089 ITU-T-K20/K21 ma 7050 SMP100LC SMP100LC-270 TRISIL SMP st L35

    Untitled

    Abstract: No abstract text available
    Text: SMP100LC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage range from 8 V to 400 V ■ Low capacitance from 20 pF to 45 pF @ 2 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min.


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    PDF SMP100LC DO-214AA) UL60950, UL1459. GR-1089

    Untitled

    Abstract: No abstract text available
    Text: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


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    PDF 2N2219AHR 2N2219AHR

    Untitled

    Abstract: No abstract text available
    Text: ST3232EB ST3232EC ± 15 kV ESD protection 3 to 5.5 V low power, up to 250 kbps, RS-232 drivers and receivers Features • ESD protection for RS-232 I/O pins ■ ±15 kV human body model ■ ±8 kV IEC 1000-4-2 contact discharge ■ 300 µA supply current ■


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    PDF ST3232EB ST3232EC RS-232 EIA/TIA-232 SO-16, SO-16 TSSOP16 SO-16

    KDS 4.000 Crystal

    Abstract: KDS crystal 8.000 AN3060 digital weight AN3060 quartz crystal kds 4.000 M41T82 M41T83 VSOJ20 KDS 4.000 oscillator M41T83Z
    Text: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital


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    PDF M41T82 M41T83 SOX18) QFN16, VFQFPN16) M41T83S M41T83R M41T83Z KDS 4.000 Crystal KDS crystal 8.000 AN3060 digital weight AN3060 quartz crystal kds 4.000 M41T82 M41T83 VSOJ20 KDS 4.000 oscillator M41T83Z

    WW04

    Abstract: TRANSISTOR S 812 STM809 STM810 STM811 STM812 13 SOT23-3 9873
    Text: STM809, STM810 STM811, STM812 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Two output configurations – Push-pull RST output STM809/811 – Push-pull RST output (STM810/812) ■ 140 ms reset pulse width (min)


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    PDF STM809, STM810 STM811, STM812 STM809/811) STM810/812) OT143 OT143-4 STM809 STM811 WW04 TRANSISTOR S 812 STM809 STM810 STM811 STM812 13 SOT23-3 9873

    2N2907AUB

    Abstract: No abstract text available
    Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB  ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.


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    PDF 2N2907AHR 2N2907AHR MIL-PRF19500 DocID15382 2N2907AUB

    KDS 4.000 oscillator

    Abstract: KDS 4.000 Crystal 1418h Oscillator KDS DOC KDS 4.000 Crystal oscillator Crystal oscillator kds 8.000 CXO 046
    Text: M41T82 M41T83 Serial I2C bus real-time clock RTC with battery switchover Datasheet − production data Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows (SOX18) – Much better accuracies achievable using


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    PDF M41T82 M41T83 SOX18) M41T83S M41T83R M41T83Z KDS 4.000 oscillator KDS 4.000 Crystal 1418h Oscillator KDS DOC KDS 4.000 Crystal oscillator Crystal oscillator kds 8.000 CXO 046

    TRISIL SMP

    Abstract: ITU-T-K20 trisil L32* MARKING MARKING L09
    Text: SMP100LC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage range from 8 V to 400 V ■ Low capacitance from 20 pF to 45 pF @ 2 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min.


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    PDF SMP100LC DO-214AA) UL60950, UL1459. SMP100LC TRISIL SMP ITU-T-K20 trisil L32* MARKING MARKING L09

    AN3060 digital weight

    Abstract: KDS 4.000 oscillator CXO 046 M41T8x M41T83R AN3060 CXO 049 M41T82 M41T83 VSOJ20
    Text: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital


    Original
    PDF M41T82 M41T83 SOX18) QFN16, VFQFPN16) M41T83S M41T83R M41T83Z AN3060 digital weight KDS 4.000 oscillator CXO 046 M41T8x M41T83R AN3060 CXO 049 M41T82 M41T83 VSOJ20

    KDS 4.000 oscillator

    Abstract: KDS 32kHZ crystal KDS 8
    Text: M41T82 M41T83 Serial I2C bus real-time clock with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital


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    PDF M41T82 M41T83 SOX18) M41T83S M41T83R M41T83Z KDS 4.000 oscillator KDS 32kHZ crystal KDS 8

    5n52

    Abstract: STB5N52K3 STF5N52K3 std5n52k 5N52K3 i-pak STD5n52 STB5N52K
    Text: STB5N52K3, STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3 Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK Features Order codes STB5N52K3 STD5N52K3 STF5N52K3 STP5N52K3 STU5N52K3 VDSS 525 V RDS on max < 1.5 Ω • 100% avalanche tested


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    PDF STB5N52K3, STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 O-220FP, O-220, STB5N52K3 STD5N52K3 5n52 std5n52k 5N52K3 i-pak STD5n52 STB5N52K

    soc2907

    Abstract: 2N2907AUB
    Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.


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    PDF 2N2907AHR 2N2907AHR MIL-PRF19500 DocID15382 soc2907 2N2907AUB

    SOC2907A

    Abstract: 520200104 ESCC 5202-001 soc2907 520200105 SOC2907AHRB MARKING SMD PNP TRANSISTOR R 5202001 SOC-2907A 2N2907AHR
    Text: 2N2907AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range 3 1 1 2 2 3 -65°C to +200°C TO-18 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


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    PDF 2N2907AHR 2N2907AHR SOC2907A 520200104 ESCC 5202-001 soc2907 520200105 SOC2907AHRB MARKING SMD PNP TRANSISTOR R 5202001 SOC-2907A

    Untitled

    Abstract: No abstract text available
    Text: STM809, STM810 STM811, STM812 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Two output configurations – Push-pull RST output STM809/811 – Push-pull RST output (STM810/812) ■ 140 ms reset pulse width (min)


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    PDF STM809, STM810 STM811, STM812 STM809/811) STM810/812) OT143 OT143-4 STM809 STM811

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: No abstract text available
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77


    Original
    PDF 2N2920AHR 2N2920AHR DocID15383 TRANSISTOR SMD MARKING CODE 1 KW

    Untitled

    Abstract: No abstract text available
    Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.


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    PDF 2N2907AHR 2N2907AHR MIL-PRF19500 DocID15382

    Untitled

    Abstract: No abstract text available
    Text: THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC DIST R E V I S I O N S RESERVED. LTR A2 MATER IAL HOUSING CONTACT INK : BL 2\ 3. DESCRIPTION REVISED P E R E C O - 09 - 0 2 8 5 3 9


    OCR Scan
    PDF COPYRIGHT20 ECO-09-028539 05JAN2010 20APR2007 3IMAR2000

    Untitled

    Abstract: No abstract text available
    Text: THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC DIST R E V I S I O N S RESERVED. LTR DESCRIPTION DATE R E V I S E D PER ECO- 09 - 0 2 8 5 3 9 Al F IN IS H : CONTACTS: 3.


    OCR Scan
    PDF COPYRIGHT20 ECO-09-028539 05JAN2010 PA6-PA66< S0L18AWG RE-086 23APR2007 3IMAR2000