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    060P2 Search Results

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    060P2 Price and Stock

    Power Integrations 1SC2060P2A0-17

    IC GATE DRVR HI/LOW SIDE MODULE
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    DigiKey 1SC2060P2A0-17 Box 28 1
    • 1 $152.88
    • 10 $134.53
    • 100 $91.0402
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    Avnet Americas 1SC2060P2A0-17 Bulk 12 Weeks 20
    • 1 -
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    • 100 $108.912
    • 1000 $95.298
    • 10000 $95.298
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    Mouser Electronics 1SC2060P2A0-17 26
    • 1 $152.88
    • 10 $134.53
    • 100 $116.99
    • 1000 $116.99
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    Newark 1SC2060P2A0-17 Bulk 1
    • 1 $194.11
    • 10 $175.03
    • 100 $129.8
    • 1000 $129.8
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    TME 1SC2060P2A0-17 1
    • 1 $122.08
    • 10 $118.3
    • 100 $118.3
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    EBV Elektronik 1SC2060P2A0-17 14 Weeks 20
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    Brady Worldwide Inc 5060P-2

    5060P-2 YEL 2" GOTHIC QUIK-ALIGN
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    DigiKey 5060P-2 Bulk 1
    • 1 $12.9
    • 10 $12.9
    • 100 $12.9
    • 1000 $12.9
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    MACOM CGH35060P2

    RF MOSFET GAN HEMT 28V 440206
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    DigiKey CGH35060P2 Tray 50
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    • 100 $172.2624
    • 1000 $172.2624
    • 10000 $172.2624
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    Mouser Electronics CGH35060P2
    • 1 -
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    • 100 $179.14
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    • 10000 $179.14
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    Richardson RFPD CGH35060P2 1
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    Power Integrations 1EB2060P2A0

    EVAL BOARD FOR SCALE-2
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    DigiKey 1EB2060P2A0 Bulk 1
    • 1 $374.36
    • 10 $374.36
    • 100 $374.36
    • 1000 $374.36
    • 10000 $374.36
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    Mouser Electronics 1EB2060P2A0
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    OMRON Industrial Automation F3SJ-A1060P25

    LIGHT CURTAIN HAND 25MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey F3SJ-A1060P25 Bulk 1
    • 1 $5042.34
    • 10 $5042.34
    • 100 $5042.34
    • 1000 $5042.34
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    RS F3SJ-A1060P25 Bulk 1
    • 1 $4790.92
    • 10 $4647.18
    • 100 $4647.18
    • 1000 $4647.18
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    060P2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF

    CGH35060

    Abstract: No abstract text available
    Text: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060 PDF