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    CGH35060F2 Search Results

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    CGH35060F2 Price and Stock

    MACOM CGH35060F2

    RF MOSFET HEMT 28V 440193
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH35060F2 Tray 21 1
    • 1 $288.44
    • 10 $255.1
    • 100 $255.1
    • 1000 $255.1
    • 10000 $255.1
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    CGH35060F2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH35060F2 Wolfspeed 60W GAN HEMT 28V 4.0GHZ FLANGE Original PDF
    CGH35060F2 Wolfspeed 60W GAN HEMT 28V 4.0GHZ FLANGE Original PDF

    CGH35060F2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF

    CGH35060

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060 PDF