066N06N Search Results

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Infineon Technologies AG BSC066N06NSATMA1 MOSFET N-CH 60V 64A TDSON-8-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSC066N06NSATMA1	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.50338	Buy Now
Avnet Americas	BSC066N06NSATMA1	Reel		8 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.40608	Buy Now
Mouser Electronics	BSC066N06NSATMA1		18,908			1 $1.47 10 $1.15 100 $0.782 1000 $0.532 10000 $0.503	Buy Now
Newark	BSC066N06NSATMA1	Cut Tape	5,338		5	1 $1.38 10 $1.07 100 $0.749 1000 $0.607 10000 $0.607	Buy Now
	BSC066N06NSATMA1	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.523	Buy Now
Rochester Electronics	BSC066N06NSATMA1		1,025		1	1 $0.5593 10 $0.5593 100 $0.5257 1000 $0.4754 10000 $0.4754	Buy Now

Chip One Stop	BSC066N06NSATMA1	Cut Tape	4,630			1 $0.458 10 $0.457 100 $0.456 1000 $0.447 10000 $0.445	Buy Now
EBV Elektronik	BSC066N06NSATMA1		10,000	9 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BSC066N06NSATMA1		10,000		1	1 - 10 - 100 - 1000 - 10000 $0.4552	Buy Now
Win Source Electronics	BSC066N06NSATMA1		17,550			1 - 10 - 100 $0.7153 1000 $0.5538 10000 $0.5538	Buy Now
Infineon Technologies AG BSC066N06NS MOSFETs TRENCH 40<-<100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BSC066N06NS		4,136			1 $1.34 10 $1.1 100 $0.855 1000 $0.59 10000 $0.503	Buy Now
Bristol Electronics	BSC066N06NS		72		3	1 - 10 $1.6875 100 $0.6328 1000 $0.6328 10000 $0.6328	Buy Now
Win Source Electronics	BSC066N06NS		26,000			1 - 10 - 100 $0.714 1000 $0.4761 10000 $0.4761	Buy Now

066N06N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IEC61249-2-21 Abstract: IPB066N06N IPP066N06N C2320 Text: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature	Original	IPB070N06N IPP070N06N IPI070N06N IEC61249-2-21 IPB066N06N P-TO263-3-2 P-TO263-3 IEC61249-2-21 IPP066N06N C2320	PDF
DD 127 D TRANSISTOR Abstract: IPB066N06N IPP066N06N g33 smd 860 Text: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature	Original	IPB070N06N IPP070N06N IPI070N06N IPB066N06N P-TO263-3 P-TO263-3-2 P-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860	PDF
Untitled Abstract: No abstract text available Text: Type 066N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications	Original	BSC066N06NS IEC61249-2-21 066N06NS	PDF
DD 127 D TRANSISTOR Abstract: IPP066N06N g33 smd 860 IPB066N06N 066N06N PG-TO220-3 IPB070N06N Text: IPB070N06N G OptiMOS Power-Transistor IPP070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature	Original	IPB070N06N IPP070N06N IPB066N06N P-TO263-3-2 P-TO220-3-1 066N06N IPP066N06N DD 127 D TRANSISTOR g33 smd 860 066N06N PG-TO220-3	PDF
DD 127 D TRANSISTOR Abstract: IPB066N06N IPP066N06N g33 smd 860 Text: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 m: 80 A • 175 °C operating temperature	Original	IPB070N06N IPP070N06N IPI070N06N IPB066N06N PG-TO263-3 P-TO263-3-2 PG-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860	PDF