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    06YW Price and Stock

    Coolgear Inc CM-100606YWBSTK

    10Ft Cat5E Shielded (FTP) Ethern
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    DigiKey CM-100606YWBSTK 5,044 1
    • 1 $7.24
    • 10 $6.52
    • 100 $5.79
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    Coolgear Inc CM-100506YWBSTK

    10Ft Cat5E UTP Ethernet Network
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    DigiKey CM-100506YWBSTK 1,403 1
    • 1 $5.08
    • 10 $4.57
    • 100 $4.06
    • 1000 $4.06
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    Coolgear Inc CM-100106YWBSTK

    6Ft Cat6 UTP Ethernet Network No
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    DigiKey CM-100106YWBSTK 824 1
    • 1 $4.36
    • 10 $3.92
    • 100 $3.49
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    Coolgear Inc CM-100406YWBSTK

    15Ft Cat5E UTP Ethernet Network
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    DigiKey CM-100406YWBSTK 498 1
    • 1 $7.24
    • 10 $6.52
    • 100 $5.79
    • 1000 $5.79
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    Tripp Lite N002-006-YW

    CABLE MOD 8P8C PLUG TO PLUG 6'
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    DigiKey N002-006-YW Bulk 450 1
    • 1 $3.37
    • 10 $2.746
    • 100 $2.2387
    • 1000 $1.8875
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    Avnet Americas N002-006-YW Bulk 8 Weeks 10
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    Mouser Electronics N002-006-YW 15
    • 1 $3.37
    • 10 $2.74
    • 100 $2.23
    • 1000 $1.88
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    Newark N002-006-YW Bulk 10
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    • 100 $3.05
    • 1000 $2.22
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    RS N002-006-YW Bulk 1
    • 1 $4.39
    • 10 $4.39
    • 100 $3.91
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    NAC N002-006-YW 10 1
    • 1 $2.6
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    Master Electronics N002-006-YW 200
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    • 10 $2.9
    • 100 $2.36
    • 1000 $2.07
    • 10000 $1.93
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    Neutron USA N002-006-YW 10
    • 1 $24.99
    • 10 $24.99
    • 100 $24.99
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    06YW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		GSM3406A, OT-23 GSM3406AJZF OT-23) Lane11 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		STP6506 STC6506 -30V/-2 105mohm STP6506 PDF

    SPP6506S26RG

    Abstract: SPP6506 P-Channel Junction Field Effect Transistors sot-23 MARKING CODE G1 06YW
    Text: SPP6506 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPP6506 SPP6506 SPP6506S26RG P-Channel Junction Field Effect Transistors sot-23 MARKING CODE G1 06YW PDF