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    07NG Search Results

    07NG Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    UC2907NG4 Texas Instruments Load Share Controller 16-PDIP -40 to 85 Visit Texas Instruments Buy
    UC3707NG4 Texas Instruments Complementary High Speed Power Drivers 16-PDIP 0 to 70 Visit Texas Instruments Buy
    UC2707NG4 Texas Instruments Complementary High Speed Power Drivers 16-PDIP -40 to 85 Visit Texas Instruments Buy
    UC3907NG4 Texas Instruments Load Share Controller 16-PDIP 0 to 70 Visit Texas Instruments Buy
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    07NG Price and Stock

    BOYD Laconia MAX07NG

    MAX CLIP TO-220/MAX220 SCREW-MNT
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    DigiKey MAX07NG Bulk 24,913 1
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    Mouser Electronics MAX07NG 29,826
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    Interstate Connecting Components MAX07NG 3,861
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    Master Electronics MAX07NG 853
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    New Advantage Corporation MAX07NG 14,000 1
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    Sager MAX07NG 7,691 1
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    C&K Y1907U2C207NG

    SWITCH KEYLOCK 3POS SP3T 4A 125V
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    DigiKey Y1907U2C207NG Tray 205 1
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    Newark Y1907U2C207NG Bulk 216
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    Sager Y1907U2C207NG 36
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    Texas Instruments UC3907NG4

    IC LOAD SHARE CONTROLLER 16DIP
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    DigiKey UC3907NG4 Tube 100
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    Texas Instruments UC3707NG4

    IC GATE DRVR LOW-SIDE 16DIP
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    DigiKey UC3707NG4 Tube 75
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    Texas Instruments UC2707NG4

    IC GATE DRVR LOW-SIDE 16DIP
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    DigiKey UC2707NG4 Tube 75
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    Mouser Electronics UC2707NG4 73
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    07NG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NTD5807N, NVD5807N NTD5807N/D

    369D

    Abstract: No abstract text available
    Text: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 37 mW @ 4.5 V 16 A 31 mW @ 10 V


    Original
    PDF NTD5807N NTD5807N/D 369D

    Untitled

    Abstract: No abstract text available
    Text: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NTD5807N, NVD5807N NTD5807N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC−Q101 Qualified and PPAP Capable − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NTD5407N, STD5407N NTD5407N/D

    NTD5407NG

    Abstract: TB-17 07NG NTD5407N NTD5407NT4G
    Text: NTD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits


    Original
    PDF NTD5407N NTD5407N/D NTD5407NG TB-17 07NG NTD5407N NTD5407NT4G

    07NG

    Abstract: No abstract text available
    Text: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications


    Original
    PDF NTD5407N, STD5407N NTD5407N/D 07NG

    Untitled

    Abstract: No abstract text available
    Text: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STB5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications


    Original
    PDF NTD5407N, STD5407N STB5407N NTD5407N/D

    NVD5807NT4G

    Abstract: No abstract text available
    Text: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NTD5807N, NVD5807N AEC-Q101 NTD5807N/D NVD5807NT4G

    07NG

    Abstract: 5807N 369D NTD5807N NTD5807NT4G qt912
    Text: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • • • • 40 V CCFL Backlight DC Motor Control


    Original
    PDF NTD5807N NTD5807N/D 07NG 5807N 369D NTD5807N NTD5807NT4G qt912

    Untitled

    Abstract: No abstract text available
    Text: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original
    PDF NTD5407N, STD5407N NTD5407N/D

    5407ng

    Abstract: NTD5407NT4G 5407N NTD5407N NTD5407NG 07NG
    Text: NTD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits


    Original
    PDF NTD5407N NTD5407N/D 5407ng NTD5407NT4G 5407N NTD5407N NTD5407NG 07NG

    07NG

    Abstract: 5807N 369D NTD5807N NTD5807NT4G C3129
    Text: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 37 mW @ 4.5 V 16 A 31 mW @ 10 V


    Original
    PDF NTD5807N NTD5807N/D 07NG 5807N 369D NTD5807N NTD5807NT4G C3129

    Untitled

    Abstract: No abstract text available
    Text: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications


    Original
    PDF NTD5407N, STD5407N NTD5407N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com 40 V CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification


    Original
    PDF NTD5807N NTD5807N/D