D148
Abstract: JESD22-A114 080P3NSE
Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A
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BSO080P03NS3E
080P3NSE
D148
JESD22-A114
080P3NSE
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IEC61249-2-21
Abstract: JESD22-A114
Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8
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BSO080P03NS3E
IEC61249-2-21
080P3NSE
IEC61249-2-21
JESD22-A114
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PDF
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IEC61249-2-21
Abstract: JESD22-A114
Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A
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BSO080P03NS3
IEC61249-2-21
080P3NS
IEC61249-2-21
JESD22-A114
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PDF
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JESD22-A114
Abstract: No abstract text available
Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A
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BSO080P03NS3
080P3NS
JESD22-A114
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080P3NS
Abstract: GS-10
Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features VDS • single P-Channel in SO8 • Qualified according JEDEC1 for target applications • 150°C operating temperature RDS on),max -30 V VGS=-10 V 8.0 mW VGS=-6 V 11.4 ID -14.8 A • V GS=25 V, specially suited for notebook applications
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BSO080P03NS3
IEC61249-2-21
080P3NS
080P3NS
GS-10
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PDF
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JESD22-A114
Abstract: No abstract text available
Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A
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BSO080P03NS3E
080P3NSE
JESD22-A114
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PDF
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JESD22-A114
Abstract: d148
Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A
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BSO080P03NS3
080P3NS
JESD22-A114
d148
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Untitled
Abstract: No abstract text available
Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features VDS • single P-Channel in SO8 • Qualified according JEDEC1 for target applications • 150°C operating temperature RDS on),max -30 V VGS=-10 V 8.0 m9 VGS=-6 V 11.4 ID -14.8 A • V GS=25 V, specially suited for notebook applications
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Original
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BSO080P03NS3
IEC61249-2-21
080P3NS
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PDF
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