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    D148

    Abstract: JESD22-A114 080P3NSE
    Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3E 080P3NSE D148 JESD22-A114 080P3NSE PDF

    IEC61249-2-21

    Abstract: JESD22-A114
    Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8


    Original     		BSO080P03NS3E IEC61249-2-21 080P3NSE IEC61249-2-21 JESD22-A114 PDF

    JESD22-A114

    Abstract: No abstract text available
    Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3E 080P3NSE JESD22-A114 PDF