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    086N10P

    Abstract: KU086N10P Mos fet 086N10P
    Text: SEMICONDUCTOR 086N10P/F TECHNICAL DATA N-ch Trench MOS FET General Description 086N10P A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


    Original     		KU086N10P/F KU086N10P Fig16. Fig17. Fig18. 086N10P KU086N10P Mos fet 086N10P PDF