Untitled
Abstract: No abstract text available
Text: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core
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Si7758DP
2002/95/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: HPS Vishay Sfernice High Ohmic Value up to 1.5 GΩ , High Power Resistors (up to 10 W at 25 °C) Thick Film Technology FEATURES • RoHS for most values, please consult us • • • • High ohmic values up to 1.5 GΩ Power rating up to 10 W at + 25 °C
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18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core
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Si7758DP
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: HFA32PA120CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 32 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free
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HFA32PA120CPbF
O-247AC
HFA32PA120C
12-Mar-07
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VBUS052BD-HTF-GS08
Abstract: No abstract text available
Text: VBUS052BD-HTF Vishay Semiconductors Low Capacitance, 2-Line ESD-Protection Diode Features • • • • • • • • • • • • Compact LLP75-4L package Low package height < 0.6 mm 2-line ESD-protection e3 Low leakage current < 0.1 µA Low load capacitance CD = 1.5 pF
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VBUS052BD-HTF
LLP75-4L
2002/95/EC
2002/96/EC
18-Jul-08
VBUS052BD-HTF-GS08
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Untitled
Abstract: No abstract text available
Text: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core
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Si7758DP
2002/95/EC
Si7758DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core
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Si7758DP
2002/95/EC
Si7758DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current
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IRF9Z20,
SiHF9Z20
12-Mar-07
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74470
Abstract: DG411 DG412 DG413 DG451 DG452 DG453 SOIC16 TSSOP16
Text: New Product DG451/DG452/DG453 Vishay Siliconix High Voltage 4-Ω Quad SPST CMOS Analog Switch DESCRIPTION FEATURES The DG451 series has four independently selectable high voltage 44 V SPST switches, each with a typical on resistance of 4 Ω and a typical flatness of 0.2 Ω, ideal
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DG451/DG452/DG453
DG451
DG451
DG452
DG453
18-Jul-08
74470
DG411
DG412
DG413
DG452
SOIC16
TSSOP16
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2N6661-2
Abstract: M1042
Text: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω
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2N6661-2
O-205AD
11-Mar-11
2N6661-2
M1042
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Untitled
Abstract: No abstract text available
Text: TEMT4700 Vishay Semiconductors Silicon NPN Phototransistor Description TEMT4700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-3 package for surface mounting on printed boards. Due to its waterclear epoxy the device is sensitive to
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TEMT4700
TEMT4700
TSMS3700
2002/95/EC
2002/96/EC
18-Jul-08
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si7758
Abstract: No abstract text available
Text: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free • SkyFET Monolithic TrenchFET Gen III
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Si7758DP
Si7758DP-T1-GE3
18-Jul-08
si7758
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HFA30PA60CPBF
Abstract: No abstract text available
Text: HFA30PA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free
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HFA30PA60CPbF
O-247AC
HFA30PA60C
12-Mar-07
HFA30PA60CPBF
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Untitled
Abstract: No abstract text available
Text: HFA04TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • • Base common cathode + 2 Available RoHS* COMPLIANT BENEFITS • • • • • 3 - Anode 1 Anode - Ultrafast recovery Ultrasoft recovery
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HFA04TB60SPbF
HFA04TB60S
12-Mar-07
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74473
Abstract: DG455 DG456 DG411 DG412 DG413 SOIC16 TSSOP16
Text: New Product DG454/DG455/DG456 Vishay Siliconix High Voltage 4-Ω Quad SPST CMOS Analog Switch DESCRIPTION FEATURES The DG454 series has four independently selectable high voltage 44 V SPST switches, each with a typical on resistance of 4 Ω and a typical flatness of 0.2 Ω, ideal
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DG454/DG455/DG456
DG454
DG454
DG455
DG456
18-Jul-08
74473
DG455
DG411
DG412
DG413
SOIC16
TSSOP16
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RUWIDO
Abstract: vishay Diode type SMD marking SJ tsop Ir sensor ruwido r-step tsop8238 remote control car circuit diagram 20750 omni spectra diode detector tsop34138 TSOP31238 Motor DRIVE MTBF
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0090-0810
RUWIDO
vishay Diode type SMD marking SJ
tsop Ir sensor
ruwido r-step
tsop8238
remote control car circuit diagram
20750 omni spectra diode detector
tsop34138
TSOP31238
Motor DRIVE MTBF
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Untitled
Abstract: No abstract text available
Text: RPH 100 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating • Low thermal radiation of the case • Wide ohmic value range • Easy mounting • High overload capabilities • Reduced size and weight
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18-Jul-08
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ARM at91sam
Abstract: AT91SAM
Text: AT91SAM Update for EWARM 1. Introduction The AT91SAM Update for EWARM enables you to keep your IDE up-to-date by integrating all the newer Atmel devices, software projects, and additional tools such as Flash loaders and device description files. Atmel’s software offering for its AT91SAM family of ARM Thumb® microcontrollers is
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AT91SAM
09-Jun-08
ARM at91sam
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R0100
Abstract: rch sfernice
Text: RCH Vishay Sfernice Power Resistors, for Mounting onto a Heatsink Thick Film Technology FEATURES • 5 W to 50 W • High power rating • High overload capabilities up to 2500 VRMS • Wide resistance range from 0R24 to 1 MΩ Manufactured in cermet thick film technology, these power
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18-Jul-08
R0100
rch sfernice
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MUN5211DW
Abstract: MUN5212DW MUN5213DW MUN5214DW MUN5215DW
Text: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor 6 NPN Silicon 5 R1 Q2 P b Lead Pb -Free R2 1 4 6 5 4 R2 Q1 R1 3 2 1 2 3 SOT-363(SC-88) NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current
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MUN5211DW
OT-363
SC-88)
20-Jan-09
OT-363
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
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Untitled
Abstract: No abstract text available
Text: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor 6 NPN Silicon 5 R1 Q2 P b Lead Pb -Free 4 4 R2 Q1 R2 R1 1 6 5 3 2 1 2 3 SOT-363(SC-88) NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current
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MUN5211DW
OT-363
SC-88)
29-Dec-05
OT-363
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DAP 07
Abstract: No abstract text available
Text: VESD09A4A-HS4 Vishay Semiconductors 4-Line Quad ESD Protection Diode Array in LLP1010-6L Features • • • • • • • • • • • • • Ultra compact LLP1010-6L package Low package height < 0.4 mm 4-line ESD protection (quad) e4 Low leakage current < 0.1 µA
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VESD09A4A-HS4
LLP1010-6L
LLP1010-6L
2002/95/EC
2002/96/EC
18-Jul-08
DAP 07
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m2017
Abstract: M1042 2N6661-2 M1051 m2017a 6863-2
Text: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω
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2N6661-2
O-205AD
18-Jul-08
m2017
M1042
2N6661-2
M1051
m2017a
6863-2
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Tyco PA66
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED BY TY C O C O P Y R IG H T E L E C T R O N IC S FO R ALL C O R P O R A T IO N . 2 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T R E V IS IO N S D E S C R IP T IO N A' DIM A 1.80 TYP 3 .5 0 TYP
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ECO-08-014051
09JUN08
UL94V-0,
5000Mohm/DC
AC2000V/1
30MAR2D07
31MAR2000
Tyco PA66
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