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    Text: N AMER PHILIPS/DISCRETE bRE D bb53R31 0D30S10 273 « A P X Product Specification Philips Semiconductors BUK442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    bb53R31 0D30S10 BUK442-1OOA/B OT186 BUK442 -100A -100B BUK442-100A/B PDF