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    HY29F800T

    Abstract: PSOP 44 Pattern HY29F800B
    Text: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte


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    HY29F800 1Mx8/512Kx16) HY29F800T PSOP 44 Pattern HY29F800B PDF

    HY29F800TT-90

    Abstract: hy29f800tt HY29F800 PSOP44 29F800 code
    Text: HY29F800 8 Megabit 1M x 8/512K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte


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    HY29F800 8/512K S-128 HY29F800TT-90 hy29f800tt HY29F800 PSOP44 29F800 code PDF

    M29F400FB

    Abstract: M29Fxxx M29F160FT m29f800F M29F400 M29F160F M29F400FT
    Text: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N


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    200FT, 400FT, 800FT, 160FT 200FB, 400FB, 800FB, 160FB M29F200FT: 0x2251 M29F400FB M29Fxxx M29F160FT m29f800F M29F400 M29F160F M29F400FT PDF

    M29F400FB

    Abstract: m29f800fb M29F200FB M29F400FT M29F800FT m29f160fb M29Fxxx m29f160ft JEDEC TRAY TSOP1 0x22D2
    Text: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N


    Original
    200FT, 400FT, 800FT, 160FT 200FB, 400FB, 800FB, 160FB M29F200FT: 0x2251 M29F400FB m29f800fb M29F200FB M29F400FT M29F800FT m29f160fb M29Fxxx m29f160ft JEDEC TRAY TSOP1 0x22D2 PDF

    M29F800FT

    Abstract: M29F800 M29F400FB M29F400FT
    Text: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3


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    M29FxxxFT/B M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B 0x01h M29F200FT: 0x2251 M29F400FT: 0x2223 M29F800FT M29F800 M29F400FB M29F400FT PDF

    M29F800FT

    Abstract: M29F400FB M29F200FB m29f160fb M29F400F M29F400FT m29f800fb m29F160FT M29F200FT 0x22D6
    Text: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N


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    200FT, 400FT, 800FT, 160FT 200FB, 400FB, 800FB, 160FB M29F200FT: 0x2251 M29F800FT M29F400FB M29F200FB m29f160fb M29F400F M29F400FT m29f800fb m29F160FT M29F200FT 0x22D6 PDF

    M29F800B

    Abstract: M29F800T M29F800 M29W800T model AN1053 application note Flash driver source code AM29LV800B M29W800B M29W800T
    Text: AN1053 APPLICATION NOTE Software Drivers for M29F800 and M29W800 Flash Memories CONTENTS Introduction The M29F800 Programming Model Modifying Code from Am29LV800 Using the C libraries C Library Functions Adapting the Software for the Target System Limitations of the code


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    AN1053 M29F800 M29W800 M29F800 Am29LV800 M29F800A M29W800A M29F800B M29W800B M29F800T M29W800T model AN1053 application note Flash driver source code AM29LV800B M29W800T PDF

    M29F800FT

    Abstract: m29f800f M29F400FT M29F160F M29F200FT M29F160FT M29F800 M29F400F M29F200F M29F400FB
    Text: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3


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    M29FxxxFT/B M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B 0x01h M29F200FT: 0x2251 M29F400FT: 0x2223 M29F800FT m29f800f M29F400FT M29F160F M29F200FT M29F160FT M29F800 M29F400F M29F200F M29F400FB PDF

    48-pin TSOP package tray micron

    Abstract: No abstract text available
    Text: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3


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    M29FxxxFT/B M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B TSOP48 AEC-Q100) 09005aef845656da m29fxxxf/t 2mb-16mb 48-pin TSOP package tray micron PDF

    HY29F800ATT

    Abstract: hynix 1.8 memory flash 0x78000
    Text: HY29F800A 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 50 ns n Low Power Consumption – 20 mA typical active read current in byte


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    HY29F800A 1Mx8/512Kx16) from55ns, 120ns HY29F800ATT hynix 1.8 memory flash 0x78000 PDF

    m29f800fb

    Abstract: No abstract text available
    Text: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N


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    200FT, 400FT, 800FT, 160FT 200FB, 400FB, 800FB, 160FB M29F200FT: 0x2251 m29f800fb PDF

    HY29F800b

    Abstract: HY29F800TT90 29F800 equivalent 29f800
    Text: HY29F800 8 Megabit 1M x 8/512K x 16 , 5V Only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte


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    HY29F800 8/512K S-128 HY29F800b HY29F800TT90 29F800 equivalent 29f800 PDF

    HY29F800

    Abstract: PSOP44 HY29F800TT90 DQ021
    Text: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte


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    HY29F800 1Mx8/512Kx16) S-128 HY29F800 PSOP44 HY29F800TT90 DQ021 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY29F800 8 M egabit 1M x 8/512K x 16 , 5V Only, Flash M em ory KEY FEATURES • ■ ■ ■ ■ ■ 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption


    OCR Scan
    HY29F800 8/512K PDF