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    Kyocera AVX Components 100B0R1BW500XT

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    TTI 100B0R1BW500XT Reel 500
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    Kyocera AVX Components 100B0R1BWN500XT

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    Kyocera AVX Components 100B0R1BW1500XT

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    Kyocera AVX Components 100B0R1BW500XC100

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    Richardson RFPD 100B0R1BW500XC100 100
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    Kyocera AVX Components 100B0R1BW500XT1K

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    Richardson RFPD 100B0R1BW500XT1K 1,000
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    100B0R1BW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100B0R1BW

    Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


    Original     		PDF MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1

    MRF5S21130H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF5S21130/D MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 MRF5S21130SR3

    MRF6S21140HSR3

    Abstract: J932
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21140HR3 MRF6S21140HSR3 J932

    J949

    Abstract: rf t 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130H
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HSR3


    Original     		PDF MRF5S21130H/D MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130HR3 J949 rf t 465B AN1955 MRF5S21130HSR3 MRF5S21130H

    gsm signal amplifier

    Abstract: 500 watts amplifier schematic diagram A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 1, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


    Original     		PDF MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 gsm signal amplifier 500 watts amplifier schematic diagram A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1

    MRF5S21130H

    Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
    Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130HR3 MRF5S21130H 465B AN1955 MRF5S21130HSR3

    A114

    Abstract: AN1955 JESD22 MRF6S21140HR3 MRF6S21140HSR3 465B
    Text: Freescale Semiconductor Technical Data MRF6S21140H/D Rev. 1, 11/2004 The RF MOSFET Line RF Power Field Effect Transistors MRF6S21140HR3 MRF6S21140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21140H/D MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HR3 A114 AN1955 JESD22 MRF6S21140HSR3 465B

    465B

    Abstract: AN1955 MRF5S21130 MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130R3 MRF5S21130SR3 J254
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130R3 and MRF5S21130SR3 replaced by MRF5S21130HR3 and MRF5S21130HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21130R3 RF Power Field Effect Transistors MRF5S21130SR3


    Original     		PDF MRF5S21130/D MRF5S21130R3 MRF5S21130SR3 MRF5S21130HR3 MRF5S21130HSR3. MRF5S21130R3 MRF5S21130SR3 465B AN1955 MRF5S21130 MRF5S21130HSR3 J254

    MRF5S21130H

    Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
    Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130HR3 MRF5S21130H 465B AN1955 MRF5S21130HSR3

    vishay mosfet MTBF

    Abstract: 465B AN1955 MRF5S21130 MRF5S21130R3 MRF5S21130SR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S21130R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130SR3


    Original     		PDF MRF5S21130/D MRF5S21130R3 MRF5S21130SR3 MRF5S21130R3 vishay mosfet MTBF 465B AN1955 MRF5S21130 MRF5S21130SR3

    j949

    Abstract: motorola 5420 J1175 J297 CAPACITOR chip mtbf
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110 MRF5S21130SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line


    Original     		PDF MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 j949 motorola 5420 J1175 J297 CAPACITOR chip mtbf

    MRF5S21130H

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21130H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110


    Original     		PDF MRF5S21130H/D MRF5S21130HR3 MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130H

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF5S21130/D MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 MRF5S21130SR3

    MRF5S21130H

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21130H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110


    Original     		PDF MRF5S21130H/D MRF5S21130HR3 MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130H

    vishay mosfet MTBF

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130SR3 Designed for W - CDMA base station applications at frequencies from 2110


    Original     		PDF MRF5S21130/D 13Office. MRF5S21130R3 MRF5S21130SR3 vishay mosfet MTBF

    2060 d

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6S21140H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. MRF6S21140HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21140HSR3


    Original     		PDF MRF6S21140H/D MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140H/D 2060 d

    1812y224kxa

    Abstract: J1175
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130HR3 MRF5S21130HSR3 1812y224kxa J1175

    465B

    Abstract: A114 AN1955 JESD22 MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 465B A114 AN1955 JESD22 MRF6S21140H MRF6S21140HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130R3 and MRF5S21130SR3 replaced by MRF5S21130HR3 and MRF5S21130HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21130R3 RF Power Field Effect Transistors MRF5S21130SR3


    Original     		PDF MRF5S21130/D MRF5S21130R3 MRF5S21130SR3 MRF5S21130HR3 MRF5S21130HSR3. MRF5S21130R3 MRF5S21130SR3

    MRF5S21130H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130HR3 MRF5S21130H

    j949

    Abstract: 465B MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
    Text: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF5S21130/D MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S j949 465B MRF5S21130SR3

    mrf6s21140hs

    Abstract: mrf6s21 100B0R2B MRF6S21140H 1812Y224
    Text: Freescale Semiconductor Technical Data MRF6S21140H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 mrf6s21140hs mrf6s21 100B0R2B 1812Y224

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3