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Kyocera AVX Components 100B100GW500XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B100GW500XTV)
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Avnet Americas	100B100GW500XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B100GW500XTV					1 - 10 - 100 - 1000 $3.48 10000 $3.48	Get Quote
Kyocera AVX Components 100B100GWN500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B100GWN500XT)
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Avnet Americas	100B100GWN500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B100GWN500XT					1 - 10 - 100 - 1000 $3.81 10000 $3.81	Get Quote
Kyocera AVX Components 100B100GW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B100GW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B100GW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B100GW500XT					1 - 10 - 100 - 1000 $3.76 10000 $3.76	Get Quote
TTI	100B100GW500XT	Reel			500	1 - 10 - 100 - 1000 $3.76 10000 $3.76	Buy Now
Richardson RFPD	100B100GW500XT				500	1 - 10 - 100 - 1000 $2.89 10000 $2.62	Buy Now
Kyocera AVX Components 100B100GWN1500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B100GWN1500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B100GWN1500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B100GWN1500XT					1 - 10 - 100 - 1000 $3.81 10000 $3.81	Get Quote
Kyocera AVX Components 100B100GW500XC100 Silicon RF Capacitors / Thin Film 10PF 500V 2% 1111
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Mouser Electronics	100B100GW500XC100					1 $6.77 10 $5.87 100 $4.01 1000 $4.01 10000 $4.01	Get Quote
TTI	100B100GW500XC100	WAFL			100	1 - 10 - 100 $3.97 1000 $3.97 10000 $3.97	Buy Now
Richardson RFPD	100B100GW500XC100				1	1 $3.75 10 $3.75 100 $3.75 1000 $2.89 10000 $2.62	Buy Now

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100B100GW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1	PDF
C-XM-99-001-01 Abstract: pep cxm MRF21010 Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010 MRF21010LR1 MRF21010LSR1 C-XM-99-001-01 pep cxm	PDF
100B0R5BW Abstract: MW4IC2020NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage	Original	MW4IC2020 MW4IC2020NBR1 MW4IC2020GNBR1 MW4IC2020MBR1 MW4IC2020GMBR1 MW4IC2020 100B0R5BW	PDF
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P20180HR6	PDF
TAJE226M035 Abstract: 200B103MW Text: Freescale Semiconductor Technical Data Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P20180HR6 TAJE226M035 200B103MW	PDF
MW4IC2020NBR1 Abstract: Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020 MW4IC2020GMBR1 MW4IC2020MBR1 MW4IC2020MBR Text: Document Number: MW4IC2020 Freescale Semiconductor Rev. 8, 5/2006 Replaced by MW4IC2020NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MW4IC2020 MW4IC2020NBR1 MW4IC2020 MW4IC2020MBR1 MW4IC2020GMBR1 Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020GMBR1 MW4IC2020MBR	PDF
ATC capacitor 100b Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130 Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 ATC capacitor 100b MRF9130LSR3 irl130	PDF
marking Z4 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1	PDF
A113 Abstract: AN1987 MW4IC2020GMBR1 MW4IC2020MBR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station	Original	MW4IC2020/D MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1 A113 AN1987 MW4IC2020GMBR1	PDF
Transistor J438 Abstract: MRF21010 100B102JW Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010 MRF21010S Transistor J438 100B102JW	PDF
PHILIPS capacitors 0.1 mf Abstract: Transistor t 2 smd motorola Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090A MRF18090AR3 PHILIPS capacitors 0.1 mf Transistor t 2 smd motorola	PDF
MRF21010 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010 MRF21010LR1 MRF21010LSR1	PDF

MRF21010R1 Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010R1 567 tone MRF21010 MRF21010LSR1 100B102JW	PDF
TB200 Abstract: amidon BN-61-202 c12 ph zener diode Text: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200	Original	TB200 20-1000MHz LB401 TB200 28Vdc, 20Mhz 200B104KW50X 100B100GW500X amidon BN-61-202 c12 ph zener diode	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF
Transistor J182 Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	MRF9100/D MRF9100 MRF9100R3 MRF9100SR3 MRF9100 MRF9100R3 Transistor J182 MRF9100SR3 08053G105ZATEA	PDF
TLX8-0300 Abstract: "capacitor philips" transistor motorola 114-8 motorola s 114-8 smd mosfet z8 smd z5 transistor transistor motorola 351 465B GSM1800 MRF18090A Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies	Original	MRF18090A/D MRF18090A MRF18090AS MRF18090A TLX8-0300 "capacitor philips" transistor motorola 114-8 motorola s 114-8 smd mosfet z8 smd z5 transistor transistor motorola 351 465B GSM1800	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P20180HR6 MRF5P20180HR6	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3	PDF
J182 transistor Abstract: J152 mosfet transistor MRF9100 MRF9100R3 MRF9100SR3 Transistor J182 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	MRF9100/D MRF9100R3 MRF9100SR3 MRF9100R3 J182 transistor J152 mosfet transistor MRF9100 MRF9100SR3 Transistor J182	PDF
MRF21010 Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010/D MRF21010R1 MRF21010SR1 MRF21010R1 MRF21010 MRF21010SR1 sot-23 macom 100B5R6B	PDF
MW4IC2020NBR1 Abstract: A113 AN1955 AN1977 AN1987 MW4IC2020GNBR1 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020N Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020N wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage	Original	MW4IC2020N MW4IC2020N MW4IC2020NBR1 MW4IC2020GNBR1 A113 AN1955 AN1977 AN1987 MW4IC2020GNBR1	PDF

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100B100GW Price and Stock

Kyocera AVX Components 100B100GW500XTV

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Kyocera AVX Components 100B100GWN1500XT

Kyocera AVX Components 100B100GW500XC100

100B100GW Datasheets Context Search

Untitled

Untitled

C-XM-99-001-01

100B0R5BW

Untitled

Untitled

TAJE226M035

MW4IC2020NBR1

ATC capacitor 100b

marking Z4

A113

Transistor J438

PHILIPS capacitors 0.1 mf

MRF21010

MRF21010R1

TB200

2a258 transistor

Transistor J182

TLX8-0300

Untitled

Untitled

J182 transistor

MRF21010

MW4IC2020NBR1