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Kyocera AVX Components 100B102JW50XT1K CAP CER 1000PF 50V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B102JW50XT1K	Cut Tape	4,080		1	1 $12.66 10 $8.994 100 $7.0418 1000 $6.24694 10000 $6.24694	Buy Now
	100B102JW50XT1K	Digi-Reel	4,080		1	1 $12.66 10 $8.994 100 $7.0418 1000 $6.24694 10000 $6.24694	Buy Now
	100B102JW50XT1K	Reel	3,000		1,000	1 - 10 - 100 - 1000 $5.99813 10000 $5.99813	Buy Now
Avnet Americas	100B102JW50XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B102JW50XT1K					1 - 10 - 100 - 1000 $5.4 10000 $5.4	Get Quote
Richardson RFPD	100B102JW50XT1K				1,000	1 - 10 - 100 - 1000 $5.07 10000 $4.45	Buy Now
Kyocera AVX Components 100B102JW300T MLC A/B/R - Custom Tape W/Leader (Alt: 100B102JW300T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B102JW300T	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B102JW300T		565			1 $9.26 10 $8.03 100 $7.71 1000 $6.42 10000 $6.42	Buy Now
TTI	100B102JW300T	Reel	5,000		500	1 - 10 - 100 - 1000 $6.38 10000 $6.38	Buy Now
Kyocera AVX Components 100B102JW300XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B102JW300XT1K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B102JW300XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B102JW300XT1K					1 - 10 - 100 - 1000 $4.78 10000 $4.78	Get Quote
Richardson RFPD	100B102JW300XT1K		8,000		1,000	1 - 10 - 100 - 1000 $5.07 10000 $4.45	Buy Now
Kyocera AVX Components 100B102JW50XC100 MLC A/B/R - Waffle Pack (Alt: 100B102JW50XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B102JW50XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B102JW50XC100		100			1 $10.18 10 $8.83 100 $6.79 1000 $5.77 10000 $5.77	Buy Now
Richardson RFPD	100B102JW50XC100		100		100	1 - 10 - 100 $5.64 1000 $5.07 10000 $4.45	Buy Now
Kyocera AVX Components 100B102JW50XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B102JW50XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B102JW50XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B102JW50XTV					1 - 10 - 100 - 1000 $5.66 10000 $5.66	Get Quote
TTI	100B102JW50XTV	Reel			500	1 - 10 - 100 - 1000 $5.6 10000 $5.6	Buy Now

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100B102JW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B102JW50XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1000PF 50V P90 1111		Original	PDF
100B102JW50XT1K		American Technical Ceramics	Ceramic Capacitor 1000PF 50V P90 1111		Original	PDF

100B102JW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C-XM-99-001-01 Abstract: pep cxm MRF21010 Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010 MRF21010LR1 MRF21010LSR1 C-XM-99-001-01 pep cxm
transistor GT 1081 Abstract: MRFG35010AR5 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for	Original	PDF	MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5
Transistor J438 Abstract: MRF21010 100B102JW Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010 MRF21010S Transistor J438 100B102JW
MRF21010 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010 MRF21010LR1 MRF21010LSR1
MRF21010R1 Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	PDF	MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010R1 567 tone MRF21010 MRF21010LSR1 100B102JW
TB200 Abstract: amidon BN-61-202 c12 ph zener diode Text: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200	Original	PDF	TB200 20-1000MHz LB401 TB200 28Vdc, 20Mhz 200B104KW50X 100B100GW500X amidon BN-61-202 c12 ph zener diode
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	PDF	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
MRF21010 Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010/D MRF21010R1 MRF21010SR1 MRF21010R1 MRF21010 MRF21010SR1 sot-23 macom 100B5R6B
10ACPR Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010LR1 MRF21010LSR1 10ACPR
capacitor 2200 micro M Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking Text: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs	Original	PDF	MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LSR1 macom marking
100A101JW150XT Abstract: transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for	Original	PDF	MRFG35010A MRFG35010AR1 100A101JW150XT transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101
MRF21010 Abstract: MRF21010LR1 MRF21010LSR1 Vishay Capacitor marking Text: Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110	Original	PDF	MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 MRF21010 MRF21010LSR1 Vishay Capacitor marking
capacitor 2200 micro M Abstract: MRF21010LR1 MRF21010LSR1 08053G105ZATEA MRF21010 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc.	Original	PDF	MRF21010/D MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M MRF21010LSR1 08053G105ZATEA MRF21010
Untitled Abstract: No abstract text available Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs DEVICE CHARACTERISTICS From Device Data Sheet	Original	PDF	MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS

Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs	Original	PDF	MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS
Untitled Abstract: No abstract text available Text: <£e.mi-Conclu<2koi ^Product*, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 378-8960 The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N- Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	MRF21010LR1 MRF21010LSR1 360C-05 NI-360S
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs	Original	PDF	MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 RDMRF5S21130UMTS
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for	Original	PDF	MRFG35010A MRFG35010AR1
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs W–CDMA 2.11–2.17 GHz	Original	PDF	MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 RDMRF5S21130UMTS
MRF21010 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.	Original	PDF	MRF21010/D MRF21010 MRF21010S MRF21010S
MRF21010 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110	Original	PDF	MRF21010/D MRF21010LR1 MRF21010LSR1 MRF21010LSR1 MRF21010/D MRF21010
100A100JW150XT Abstract: transistor GT 1081 100A101JW150XT 100B102JW500XT 200B104KW50XT AN1955 MRFG35010AR1 gt 1438 transistor D 1108 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for	Original	PDF	MRFG35010A MRFG35010AR1 100A100JW150XT transistor GT 1081 100A101JW150XT 100B102JW500XT 200B104KW50XT AN1955 MRFG35010AR1 gt 1438 transistor D 1108
MRF21010 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	PDF	MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010LSR1 MRF21010/D MRF21010
smd diode J476 Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3 Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	PDF	DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3

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Kyocera AVX Components 100B102JW50XT1K

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100B102JW Datasheets (2)

100B102JW Datasheets Context Search

C-XM-99-001-01

transistor GT 1081

Transistor J438

MRF21010

MRF21010R1

TB200

2a258 transistor

MRF21010

10ACPR

capacitor 2200 micro M

100A101JW150XT

MRF21010

capacitor 2200 micro M

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled

MRF21010

MRF21010

100A100JW150XT

MRF21010

smd diode J476