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    100B4R7CW Search Results

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    100B4R7CW Price and Stock

    Kyocera AVX Components 100B4R7CW500XT1K

    CAP CER 4.7PF 500V P90 1111
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    DigiKey 100B4R7CW500XT1K Cut Tape 1,717 1
    • 1 $6.52
    • 10 $4.455
    • 100 $3.3589
    • 1000 $2.91302
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    100B4R7CW500XT1K Digi-Reel 1,717 1
    • 1 $6.52
    • 10 $4.455
    • 100 $3.3589
    • 1000 $2.91302
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    100B4R7CW500XT1K Reel 1,000 1,000
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    • 1000 $2.49656
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    Avnet Americas 100B4R7CW500XT1K Tape w/Leader 16 Weeks 1,000
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    Mouser Electronics 100B4R7CW500XT1K
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    Richardson RFPD 100B4R7CW500XT1K 1,000
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    • 1000 $2.31
    • 10000 $2.05
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    Kyocera AVX Components 100B4R7CW500X

    Cap Ceramic 4.7pF 500V P90 0.25pF Pad SMD 1010 175°C
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    Arrow Electronics 100B4R7CW500X 75 16 Weeks 37
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    • 100 $2.706
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    KYOCERA AVX Components 100B4R7CW500X

    Cap Ceramic 4.7pF 500V P90 0.25pF Pad SMD 1010 175°C
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    Verical 100B4R7CW500X 75 37
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    American Technical Ceramics Corp 100B4R7CW500X

    Cap Ceramic 4.7pF 500V +90±30ppm/C 0.25pF Pad SMD 175°C Low ESR T/R
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    Verical 100B4R7CW500X 67 20
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    Kyocera AVX Components 100B4R7CW1500XT

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B4R7CW1500XT)
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    Avnet Americas 100B4R7CW1500XT Tape w/Leader 16 Weeks 500
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    Mouser Electronics 100B4R7CW1500XT 418
    • 1 $4.73
    • 10 $4.07
    • 100 $3.51
    • 1000 $3.02
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    TTI 100B4R7CW1500XT Reel 500 500
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    Find more 100B4R7CW price and stock on Findchips.com

    100B4R7CW Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B4R7CW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 4.7PF 500V P90 1111 Original PDF
    100B4R7CW500XT1K American Technical Ceramics Ceramic Capacitor 4.7PF 500V P90 1111 Original PDF

    100B4R7CW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF6S21060N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21060NR1 MRF6S21060NBR1 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 37ployees, MRF6S21060NR1 MRF6S21060N

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP)

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1 MRF6S21060NR1 ipc 610 Class 3 100B4R7CW
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1 ipc 610 Class 3 100B4R7CW

    MRF6S21060N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21060NR1 MRF6S21060NBR1 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 MRF6S21060N

    AGR09090EF

    Abstract: JESD22-C101A ZX18 grm40x7r103k100al
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 AGR09090EF DS04-153RFPP DS04-134RFPP) JESD22-C101A ZX18 grm40x7r103k100al

    100B100JW500X

    Abstract: No abstract text available
    Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 Hz--895 DS04-134RFPP DS04-068RFPP) 100B100JW500X

    j0947

    Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X
    Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 AGR09090EF Typic14 Hz--895 j0947 JESD22-C101A ZX18 ZO 109 wa 100B100JW500X

    J535 equivalent

    Abstract: ad250 ipc 610 Class 3 pin protrusion MRF6S21060N
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 2, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21060NR1 MRF6S21060NBR1 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 MRF6S21060N J535 equivalent ad250 ipc 610 Class 3 pin protrusion