Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D bb 53 T 31 DDBDblS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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O220AB
BUK454-200A/B
BUK454
-200A
-200B
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BU2508A
Abstract: BY228 BU2508
Text: Product specification Philips Semiconductors Silicon diffused power transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to
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BU2508A
VcE148
7110fl2b
Q77S54
BU2508A
BY228
BU2508
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1B-04
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
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BU2520DW
1B-06
1B-04
1E-02
100PJPD25
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Untitled
Abstract: No abstract text available
Text: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bb53R31
00304bQ
BUK436-100A/B
BUK436
-100A
-100B
0Q304b4
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TRANSISTOR K555
Abstract: BUK555-100A fet junction transistor BUK555-100B T0220AB K-5551
Text: PHILIPS INTERNATIONAL hSE ]> M 711DflEb 0Db424b fl44 • P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power
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711QflSb
K555-1OOA/B
T0220AB
BUKS55
-100A
-100B
Tj/C-150
-ID/100
TRANSISTOR K555
BUK555-100A
fet junction transistor
BUK555-100B
K-5551
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.
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BU2523DF
IE-06
IE-04
IE-02
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