9015B
Abstract: 9014b C 9015b a3101 C 9014B
Text: 9015B 9015B Silicon PNP Epitaxial Transistor Description :The 9015B is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9014B Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um
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Original
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9015B
9015B
9014B
350um
350um
110um
110um
100um
100um
9014b
C 9015b
a3101
C 9014B
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Untitled
Abstract: No abstract text available
Text: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 03/31/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY
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EMS101-C
EMS101-C
50ohm
100umx100um.
31dBm
-40oC
-65oC
150oC
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PDF
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transistor bc846
Abstract: BC846 BC856
Text: BC846 BC846 Silicon NPN Epitaxial Transistor Description :The BC846is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC856 Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um
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Original
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BC846
BC846
BC846is
BC856
350um
350um
110um
110um
100um
100um
transistor bc846
BC856
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PDF
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GaAs MMIC SPDT Switch DC-3GHz
Abstract: EMS101-C
Text: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY Caution! ESD sensitive device.
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Original
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EMS101-C
EMS101-C
50ohm
GaAs MMIC SPDT Switch DC-3GHz
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9014b
Abstract: 9015B C 9014B C 9015b SAT Line Amplifier 9014b transistor
Text: 9014B 9014B Silicon NPN Epitaxial Transistor Description :The 9014B is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9015B Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um
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Original
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9014B
9014B
9015B
350um
350um
110um
110um
100um
100um
9015B
C 9014B
C 9015b
SAT Line Amplifier
9014b transistor
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PDF
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transistor A1015
Abstract: A1015 A1015 PNP TRANSISTOR A1015 equivalent transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET c1815 pnp a1015
Text: A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to C1815 Chip Appearance
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A1015
A1015
C1815
350um
350um
110um
110um
100um
100um
transistor A1015
A1015 PNP TRANSISTOR
A1015 equivalent
transistor pnp a1015
ic a1015
c1815 pnp
A1015 DATASHEET
c1815
pnp a1015
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transistor C1815
Abstract: C1815 A1015 npn c1815 transistor C1815 NPN Transistor NPN C1815 C1815 equivalent ic c1815 c1815 symbol npn TRANSISTOR c1815
Text: C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to A1015 Chip Appearance
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Original
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C1815
C1815
A1015
350um
350um
110um
110um
100um
100um
transistor C1815
A1015 npn
c1815 transistor
C1815 NPN Transistor
NPN C1815
C1815 equivalent
ic c1815
c1815 symbol
npn TRANSISTOR c1815
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PDF
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Untitled
Abstract: No abstract text available
Text: EMS101-C ISSUED DATE: 07-18-03 PRELIMINARY DATA SHEET DC – 6GHz GaAs MMIC SPDT SWITCH FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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Original
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EMS101-C
EMS101-C
50ohm
100umx100um.
31dBm
-40oC
-65oC
150oC
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PDF
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BC846
Abstract: BC856
Text: BC856 BC856 Silicon PNP Epitaxial Transistor Description :The BC856is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC846 Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um
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Original
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BC856
BC856
BC856is
BC846
350um
350um
110um
110um
100um
100um
BC846
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PDF
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EMS101-C
Abstract: 100umx100um
Text: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 09/29/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY
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Original
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EMS101-C
EMS101-C
50ohm
100umx100um
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PDF
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HA 7423
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR i» fflsss SÛE D December 1992 Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K or 1 Mega-RAD Si • 43D2271 GD4M230 IbT « H A S HCTS191MS Radiation Hardened Synchronous 4-Bit Up/Down Counter Pinouts 16 PIN CERAMIC DUAL-IN-LINE
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OCR Scan
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43D2271
GD4M230
HCTS191MS
MIL-STD-1835
CDIP2-T16,
utputs-10
43D2E71
104x86
05A/cm2
HA 7423
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PDF
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piezoelectric buzzer 12V
Abstract: circuit Buzzer 12v three and half digit 7 SEGMENT LCD DISPLAY BUZZER PIEZO-ELECTRIC 1.5V countdown timer 5. buzzer alarm 7 segment countdown timer Countdown oscillator buzzer 12v only Buzzer 12v
Text: Preliminary Specification RCL Semiconductors Ltd. Three and Half Digits Countdown Timer_C 6 0 0 1 A -1 GENERAL DESCRIPTION The C6001A-1 is a three and half digits count-down tim er CMOS LSI circuit. It can directly drive three and half digits LCD and alarm piezoelectric buzzer. The maximum countdown tim e is 20 hours.
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OCR Scan
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C6001A-1
piezoelectric buzzer 12V
circuit Buzzer 12v
three and half digit 7 SEGMENT LCD DISPLAY
BUZZER PIEZO-ELECTRIC 1.5V
countdown timer
5. buzzer alarm
7 segment countdown timer
Countdown
oscillator buzzer 12v
only Buzzer 12v
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PDF
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