Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    10DQ11 Search Results

    10DQ11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11N32645B IBM11N32735B IBM11N32645C IBM11N32735C 32M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: - Non buffered for increased performance - Reduced noise 35 VSs/V cc P^s


    OCR Scan
    IBM11N32645B IBM11N32735B IBM11N32645C IBM11N32735C 32Mx64, 32Mx72 104ns 11N32645B 11N32735B PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11T1645LP IBM11T1645NP 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • System Performance Benefits: - Reduced noise 18 VSs/18VCc pins


    OCR Scan
    IBM11T1645LP IBM11T1645NP VSs/18VCc 1104ns 124ns PDF

    47D5

    Abstract: 13T8644HPE-10T
    Text: IBM13T8644HPD IBM13T8644HPE One Bank 8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM • Low Power • Performance: -360 -10 3 3 100 100 t;K Clock Cycle 10 10 i ns


    OCR Scan
    IBM13T8644HPD IBM13T8644HPE 8Mx64 47D5 13T8644HPE-10T PDF

    Untitled

    Abstract: No abstract text available
    Text: j _ j g j ¥ | IB M 1 1 M 4 7 2 0 D 4M x 72 DRAM MODULE Features • 168 Pin JED EC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: - • 4M x72 Fast Page Mode DIM M • Performance:


    OCR Scan
    130ns 110ns SA14-4602-03 PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56UW272EJN Series, HB56UW264EJN Series 2.097.152-word x 72-bit High Density Dynamic RAM Module 2.097.152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-717B Z Rev.2.0 Jun. 9, 1997 Description The HB56UW272EJN, HB56UW 264EJN belong to 8 Byte DIMM (Dual In-line Memory Module) family,


    OCR Scan
    HB56UW272EJN HB56UW264EJN 152-word 72-bit 64-bit ADE-203-717B HB56UW272EJN, HB56UW 264EJN Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MICRON I 1 , 2 MEG X 32 SDRAM DIMM TECHNOLOGY, INC. SYNCHRONOUS ¡¡£fg * I JU For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html IWI a \ IWI f J I J I I I I V I V / I / w FEATURES


    OCR Scan
    100-pin, PDF

    dq35j

    Abstract: No abstract text available
    Text: IBM13T8644HPD IBM13T8644HPE One Bank 8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM • Low Power • Performance: -360 -10 3 3 100 100 t;K Clock Cycle 10 10 j ns :


    OCR Scan
    IBM13T8644HPD IBM13T8644HPE 8Mx64 dq35j PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM13T4644MC IBM13T8644MC Preliminary 4M/8M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4/8Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency ! Units ! 3 100 I MHz I jf c K


    OCR Scan
    IBM13T4644MC IBM13T8644MC 4/8Mx64 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11T4645MP 4M Zittii ViumiiiWI ^ unniniwi n m rflu irai»'I TiWTn •■ir nm n i Id HÜ il ii, I I I X 64 144 PIN SO DIMM -iniTi '!»» linm 11 TTf Iil I <>l>n 1*1V iI‘| w riir n<4 Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses


    OCR Scan
    IBM11T4645MP 1Mx64 ss/18V 256ms 50H7631 SA14-4461 PDF

    JEP-106

    Abstract: MITSUBISHI date code
    Text: MITSUBISHI LSIs Preliminary Some of contents are subject to change without notice. MH4V645/6445AXJJ-5,-6,-5S,-6S HYPER PAGE MODE 268435456-BIT 4194304-WORD BY 64-BIT DYNAMIC RAM DESCRIPTION APPLICATION This is family of 4194304 - word by 64 - bit dynamic RAM


    OCR Scan
    MH4V645/6445AXJJ-5 268435456-BIT 4194304-WORD 64-BIT 4Mx16 MH4V645/6445A MIT-DS-0085-1 JEP-106 MITSUBISHI date code PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM13T2649NC 2M x 64 2 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: CAS Latency • • • • • • jfcK I Clock Frequency jtcK i Clock Cycle


    OCR Scan
    IBM13T2649NC 2Mx64 88H4961 A14-4480-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Dual Bank Extended Data Out


    OCR Scan
    IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8Mx64, 8Mx72 104ns 124ns SA14-4624-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM13T4644MPB IBM13T8644MPB Preliminary 4M/8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4/8Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency i Units Ì 3 | fcK | Clock Frequency


    OCR Scan
    IBM13T4644MPB IBM13T8644MPB 4/8Mx64 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11M32730B IBM11M32730C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 32Mx72 Dual Bank Fast Page Mode DIMM • Performance: • System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 VSs/V cc P^s)


    OCR Scan
    IBM11M32730B IBM11M32730C 32Mx72 110ns 400mil PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56HW164EJN Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-696B Z Rev.2.0 May. 30, 1997 Description The HB56HW164EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The


    OCR Scan
    HB56HW164EJN 576-word 64-bit ADE-203-696B 16-Mbit HM51W18165) 24C02) Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: Discontinued 12/38 » last order; 9/99 las! ship IBM13T2649JC 2M x 64 SDRAM SO DIMM Features • 144 Pin (emerging) JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency jfcK jtcK


    OCR Scan
    IBM13T2649JC 2Mx64 PDF

    Nippon capacitors

    Abstract: 24C02N
    Text: HB56U W1672EJN Series, HB56UW1664EJN Series 16777216-word x 72-bit High Density Dynamic RAM Module 16777216-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-643A Z Rev. 1.0 Jun. 9, 1997 Description The HB56UW1672EJN Series, HB56UW1664EJN Series belong to 8-byte DIMM (Dual in-line Memory


    OCR Scan
    HB56U W1672EJN HB56UW1664EJN 16777216-word 72-bit 64-bit ADE-203-643A HB56UW1672EJN Nippon capacitors 24C02N PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 2M E Gx64 MICRON B SDRAM SODIMM TECHNOLOGY. INC. SMALL-OUTLINE SDRAM MODULE MT8LSDT264H FEATURES 144-Pin Small-Outline DIMM DF-6 MARKING • Package 144-pin SODIMM (gold) G • Frequency/CAS Latency 66 M Hz/CL = 2 (10ns, 100 MHz SDRAMs) -66CL2 66 M H z/CL = 3 (12ns, 83 MHz SDRAMs) -66CL3


    OCR Scan
    TLD24 144-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11T1645NP IBM11T2645NP 1M/2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • 1 M/2Mx64 Extended Data Out SO DIMM • Performance: ! -6 0 ! -6R I j^RAC i RA S Access Tim e I 60ns


    OCR Scan
    IBM11T1645NP IBM11T2645NP M/2Mx64 104ns Vss/18VCc PDF

    Untitled

    Abstract: No abstract text available
    Text: HB56UW473EJN Series, HB56UW465EJN Series HB56UW473EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 72-bit, 2 k Refresh, 2-Bank Module 18 pcs of 2 M X 8 Components HB56UW465EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 2 k Refresh, 2-Bank Module (16 pcs of 2 M X 8 Components)


    OCR Scan
    HB56UW473EJN HB56UW465EJN HB56UW473EJN 72-bit, HB56UW465EJN 64-bit, ADE-203-724C HB56UW473EJN, PDF

    10DQ11

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23240B/BL-XXBS20/DS20 2,097,152-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23240B/BL-xxBS20/DS20 is a fully decoded 2,097,152-word x 40-bit CMOS Dynamic Ran­ dom Access Memory Module composed of twenty 4-Mb DRAMs in SOJ MSM514400B/BL packages


    OCR Scan
    MSC23240B/BL-XXBS20/DS20 152-Word 40-Bit MSC23240B/BL-xxBS20/DS20 MSM514400B/BL) 72-pin 10DQ11 PDF