Untitled
Abstract: No abstract text available
Text: 1. Mechanical Dimensions: 2. S c h e m a t i c : o5.5T o- 3. Electrical Specifications: @25°C Inductance: D.20uH Nominal 100M H z, 0.1V Q: 110 Min @10QMHz 0.1V Top view Tuning C apacitance Range: 13.0p F±8 % 100MHz 0 . IV 1. SolderabilHy: Leads shall meet MIL—STD—202G,
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100MHz,
10QMHz
100MHz
MIL-STD-202G.
UL94V-0
E151556
XF757510
ug-08-06
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PDF
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GR10
Abstract: No abstract text available
Text: S c h e m a tic : '1 r' .j Isolation Voltage: 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 35DuH Min @100KHz 100mV 8mADC Rise T im e ( 1 0 —9 0% ): In s e rtio n 2 .5 n s Typical Loss (1 DQKHz—10QMHz): —1 .1d B M a x im u m Insertion Loss (1 00MHz—125MHz): —1.5dB Maximum
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OCR Scan
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350uH
100KHz
100rnV
DOKHz-100MHz)
100MHz-125MHz)
-18dB
30MHz
80MHz
10OKHzâ
60MHz
GR10
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PDF
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Untitled
Abstract: No abstract text available
Text: P FORWARD INTERNATIONAL ELECTRONICS LTD. MPSA55 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR AM PLIFIER TRANSISTOR Package: TO-92 * High Collector-Emitter Voltage Voeo=-60V * Collector Dissipation PC=625 mW Ta=25T: ABSOLUTE MAXIMUM RATINGS at TamtH25*C
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OCR Scan
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MPSA55
TamtH25
-100uA
100mA
100mA
-10mA
-100mA
10QMHZ
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PDF
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XF200
Abstract: No abstract text available
Text: I. 2 . S ch e m atic: D im e n s i o n s : A 1 .0 0 0 Max _ 2 5 .4 0 Max Transmit Seven Pole Filter Utp Side x z> XFMRS YYWW X ö □ O o> o t o a> C> CT> XF2006CE1 0.01 8 0 .4 6 E 0 .7 0 0 1 7 .7 8 - ^ DO ^ o m 2 S o in ^ CM F 0.100 2 .5 4 R eceive Five Pole
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XF2006CE1
MIL-STD-202,
UL34V-0
E151556
Hz-10MHz)
15clB
-30dB
40MHz,
-27dB
100MHz
XF200
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PDF
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150D
Abstract: XFGIB100B
Text: S c h e m a t i c : o ne o f fo u r l~~ 1 ICTrlCT J ISOLATION: 150D Vrms TURNS RATIOl (PRI/SEC 1CT:1 CT ±2% OCL: 350uH MIN @100KHz 100mV SmADC Rise Time: 1.75 hb Max. INSERTION LOSS:. -1.0dB MAX OIMHz-1 OQMHz -1.5dB MAX &10D—125MHz RETURN LOSS: -1SdB Min &1-30MHz
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OCR Scan
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350uH
100KHz
100mV
OIMHz-100MHz
10D-125MHz
-18dB
1-30MHz
-15dB
640MHz
050MHz
150D
XFGIB100B
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PDF
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Untitled
Abstract: No abstract text available
Text: I . D im e n s i o n s : 2 A 1.000 Max _ 2 5.4 0 Max . S ch e m atic: Transmit Seven Pole Filter Utp Side x X z> XFMRS ö YYWW □ O o> o t o a> C> CT> XF2006CE 0.01 8 0 .4 6 E 0 .700 17.78 ^ DO ^ o m2 S o ^ in CM F - Receive 0.100 3. E l e c t r i c a l
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XF2006CE
MIL-STD-202.
UL94-V-0
E15155B
Hz-10MHz)
-30dB
40MHz,
-27dB
100MHz
-35dB
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PDF
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC, ELECTR ICAL CHARACTERISTICS RoHS 2002/95/EC SCHEMATIC C 25"C TURNS RATIO TP1 TP2 TP3
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OCR Scan
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2002/95/EC
20LDD
f/10QMHz)
100MH
DC002
SI-61015-F
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PDF
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SK360-SILICON N-CM A N N gl r C S ET VM FAM PURER KL r U:" 1> ja -;* ! } *f:>M ÎÎT il! ;v! i MPAK MAXIMUM CHANNEL DISSIPATION CURVE I ABSOLUTE MAXIMUM RATINGS ü.! 2^Cï Synitul I(cm In .! : s k iw i Drain to w « c e voltage V rx O 20 V Gate so suurcc voltage
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2SK360----SILICON
10QMH/
2SK359.
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PDF
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h13m
Abstract: DPA05 10mAJ
Text: IS A MYO. 1 In o . / DPA05_ _ •F M _ Ä _ v U =i >ffiü&'ê-ïf5 K F M /AM S Î I r U S AGC K ^ -f 7Æ I C CDA G C ititi F 5 ^ 7 ' t b / 2 53 7 / 3Q37 I TMB T ë 3 • * ^ - f r U ' y h r c r a t b T â ï l T S Î ' > V - ^ S S c D 2 i r A 9 t : rS ^ .
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OCR Scan
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10mAj'
10QMH
DPA05-
T370-05
Catho0-05
G276-63-211H
3037JN
Na2537-1/2
DPA05
200MHz
h13m
DPA05
10mAJ
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PDF
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I8 SOT23
Abstract: FMMT495 F10Q
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IS S U E 3 - N O V E M B E R 1995 P A R T M A R K IN G D E TA IL • FMMT495 O 495 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Collector-Base Voltage Colleetor-Em itter Voltage VALUE U N IT
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OCR Scan
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FMMT495
mmc80
100mA
I8 SOT23
FMMT495
F10Q
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PDF
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LKS 210
Abstract: BAOC
Text: HY57V56820HT 32Mx8-bit, 8K Ref., 4Bank$, 3.3V DESCRIPTION The HY 57V 56820H T is a 268,435,456 bit CM O S S ynchronous DRAM, ideally suited fo r the m ain m em ory applications which require la rge m em ory density and high bandw idth. H Y 57V 56820H T is organized as 4banks o f 8,388,608x8.
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HY57V56820HT
32Mx8-bit,
56820H
608x8.
256M-bit
400mil
54pin
LKS 210
BAOC
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PDF
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OHD 3- 80M
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low V oltage Low S kew CMOS PLL Clock Driver, 3 -S ta te M C88LV915T The MC88LV915T Clock Driver utilizes phase-locked loop technology to lock its low skew outputs' frequency and phase onto an input reference clock. It is designed to provide clock distribution for high performance
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MC88LV915T
88LV915
OHD 3- 80M
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PDF
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BA0A11
Abstract: 39S64800T-80 39S648Q0T-10 SMD MARKING CODE aO9
Text: HYB39S6440X/8ÖX/16xT 64MBit Synchronous DRAM SIEM ENS 64 MBit Synchronous DRAM Advanced Information • High Performance: • Multiple Burst Read with Operation Single Write -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns • Data Mask for Read / Write control x4, x8
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OCR Scan
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HYB39S6440X/8
X/16xT
64MBit
P-TSOPII-54
400mil
B39S6440X/80X/16xT
PII-54
400mil,
TSOPN-54
BA0A11
39S64800T-80
39S648Q0T-10
SMD MARKING CODE aO9
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PDF
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TE85
Abstract: No abstract text available
Text: HYM76V8M655HG L T6 8Mx64, 4M x16 based, PC100 DESCRIPTION T h e H y n ix H Y M 7 1 V 6 M 6 5 5 H G (L )T 6 S e rie s a re 8 M x 6 4 b its S y n c h ro n o u s D R A M M o d u le s . T h e m o d u le s a re c o m p o s e d o f e ig h t 4 M x 1 6 b its C M O S S y n c h ro n o u s D R A M s in 4 0 0 m il 5 4 p in T S O P -II p a c k a g e , o n e 2 K b it E E P R O M in 8 p in T S S O P p a c k a g e o n a 1 6 8 p in
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HYM76V8M655HG
8Mx64,
PC100
2Jg4f83
TE85
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PDF
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RF POWER TRANSISTOR 100MHz
Abstract: BOX69477 high Power Amplifier 100mhz BF31
Text: BF 314 NPN HI GH frequency / SILICON « s » g s E K 5gsnäg»"-js 55 3 » SSS? j E s «rife«. ï PLANAR EPITAXIAL t r a n s is to r ?p SS5: •*«%« & *gx MECHANICAL OUTLINE DESCRIPTION ; GGENERAL ì The BF314 is a NENf silicon plana: epitaxial transistor designed for use
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OCR Scan
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O-92F
VSE-10V
120oh
200MHz
f-100MHz
r-100MHz
100MHz
VCB-10V
RF POWER TRANSISTOR 100MHz
BOX69477
high Power Amplifier 100mhz
BF31
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PDF
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