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    TE Connectivity 2112166-1

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    TE Connectivity 2112166-3

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    TE Connectivity 2112166-2

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    VPG Transducers Y1121665R000T9L

    RES SMD 665OHM 0.01% 1/4W J LEAD
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    Molex 1731121664

    FCT HOOD
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    112166 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mmbt9013

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012


    Original
    MMBT9013 625mW) 500mA) MMBT9012 MMBT9013-x-AE3-R MMBT9013L-x-AE3-R MMBT9013G-x-AE3-R OT-23 QW-R206-021 mmbt9013 PDF

    S9012T

    Abstract: No abstract text available
    Text: S9012T PNP Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 4.5±0.2 FEATURE 3.5 ±0.2 14.3 ±0.2 Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A V BR CBO : -40 0.43 +0.08


    Original
    S9012T 01-Jun-2002 S9012T PDF

    PJ2N9013CT

    Abstract: NPN transistor 500ma TO-92 PJ2N9012 PJ2N9013 PJ2N9013CX 25 V 500mA TRANSISTOR SOT23 NPN Transistor TO92 25v pt 100 to92 PT-625mW NPN Epitaxial Silicon Transistor
    Text: PJ2N9013 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLAS S B PUS H-PULL OPERATION • • • • TO-92 High total power dissipation PT=625mW High collector Current (Ic=500mA) Complementary to PJ2N9012 Excellent hEF Linearity


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    PJ2N9013 625mW) 500mA) PJ2N9012 OT-23 500mA PJ2N9013CT NPN transistor 500ma TO-92 PJ2N9012 PJ2N9013 PJ2N9013CX 25 V 500mA TRANSISTOR SOT23 NPN Transistor TO92 25v pt 100 to92 PT-625mW NPN Epitaxial Silicon Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S9013-G S9013-H S9013-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


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    S9013-G S9013-H S9013-I 625Watts -55OC S9013 PDF

    9012 Unisonic

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    625mW) -500mA) -50mA -500mA -500mA -10mA QW-R201-029 9012 Unisonic PDF

    AV9012

    Abstract: No abstract text available
    Text: @vic AV9012 TO-92 Plastic-Encapsulate Transistors AV9012 TRANSISTOR( PNP ) FEATURES Power dissipation PCM : 0.625 W(Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range


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    AV9012 AV9012 O--92 -100A -100A PDF

    S9013

    Abstract: S9013 TO92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR


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    S9013 S9012 500mA 500mA, 30MHz S9013 S9013 TO92 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 START HERE 3 4 Using This Quick Start Manual Connecting the Sensor Input Turn on the Unit To Change the Input Type: Use this Quick Start Manual to set up your controller and begin operation. Information is provided on how to: ¥ Connect ac power 1. Locate the TB2 TB3 on Version #1 connector on


    Original
    MQS1848/N/0500 12506ML-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: S9012 PNP General Purpose Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO


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    S9012 270TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    625mW) -500mA) QW-R201-029 PDF

    he6104

    Abstract: HE9013 HE9012
    Text: HI-SINCERITY Spec. No. : HE6104 Issued Date : 1992.09.09 Revised Date : 2003.08.28 Page No. : 1/4 MICROELECTRONICS CORP. HE9013 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.


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    HE6104 HE9013 HE9013 625mW) 500mA) HE9012 he6104 HE9012 PDF

    S9013

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


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    S9013 625Watts -55OC 100uAdc, S9013 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9013 Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


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    S9013 625Watts -55OC S9013 100uAdc, PDF

    Transistor 9013

    Abstract: Transistor-9013 h transistor BR 9013 BR 9013 datasheet transistor 9013
    Text: NPN SILICON TRANSISTOR 9013 TO 92 FEATURES 特 1.EMITTER 征 发 射 极 Power dissipation 最大耗散功率 PCM : 0.625 W Collector current ICM : 基 极 Tamb=25 3.COLLECTOR 最大集电极电流 0.5 电 极 1 2 3 集电极-基极击穿电压 V BR CBO : 45


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    500mA, 100mA 30MHz Transistor 9013 Transistor-9013 h transistor BR 9013 BR 9013 datasheet transistor 9013 PDF

    PT-625mW

    Abstract: No abstract text available
    Text: PJ2N9013 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION TO-92 • High total power dissipation PT=625mW • High collector Current (Ic=500mA) • Complementary to PJ2N9012 • Excellent hEF Linearity


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    PJ2N9013 625mW) 500mA) PJ2N9012 OT-23 PJ2N9013CT PJ2N9013CX OT-23 500mA 500mA PT-625mW PDF

    SS9012

    Abstract: No abstract text available
    Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC= -500mA) • Complementary to SS9013 • Excellent hFE linearity.


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    SS9012 625mW) -500mA) SS9013 SS9012 PDF

    9013 npn transistor

    Abstract: 9012 Unisonic
    Text: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1  FEATURES TO-92 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.


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    625mW) 500mA) 9013L-x-T92-B 9013G-x-T92-B 9013L-x-T92-K 9013G-x-T92-K QW-R201-030 9013 npn transistor 9012 Unisonic PDF

    transistor cs 9012

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. PT=625mW High C ollector Current. (lc=500m A) C om plem entary to S S 9012 Excellent hpE linearity.


    OCR Scan
    SS9013 625mW transistor cs 9012 PDF

    diode E1110

    Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
    Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t


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    PDF

    2sc9013

    Abstract: SS9012 14-EC
    Text: Transistors 2SC9013 USHA INDIA LTD 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • High total pow er dissipation. (PT-625mW) • High C ollector Current. (lc = 500mA) •Complementary to SS9012 •Encellent hFE linearity ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    2SC9013 PT-625mW) 500mA) SS9012 100MA, 2sc9013 SS9012 14-EC PDF

    Untitled

    Abstract: No abstract text available
    Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P t = 6 2 5 itiW High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hFE linearity.


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    SS9012 -500mA) S9013 PDF

    Untitled

    Abstract: No abstract text available
    Text: M C C TO-92 P lastic-E n cap su late T ran sisto rs S9013 T R A N S IS T O R N P N F E A T UR E S J|p%er dissipation Pcm: 0.625W (Tamb=25°C) current Icm: -0.5 A voltage V(BR)CBO: 40 V n H l ttorage junction temperature range Tj.Tstg: -55°C to + 150°C


    OCR Scan
    S9013 30MHz S9013 PDF

    LC 500-S

    Abstract: SS9013 SS9012
    Text: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO -92 High total pow er dissipation. P j= 62 5 m W High C ollector C urrent. (lc=500m A) C om plem entary to S S9012 Excellent hpE linearity.


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    SS9013 625mW) 500mA) SS9012 100nA, LC 500-S SS9013 SS9012 PDF

    SS9012

    Abstract: SS9013
    Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P j= 62 5 m W High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hpE linearity.


    OCR Scan
    SS9012 625mW) -500mA) SS9013 -100nA, g-500 SS9012 SS9013 PDF