Untitled
Abstract: No abstract text available
Text: FDS2734 N-Channel UItraFET Trench MOSFET tm 250V, 3.0A, 117mΩ Features General Descriptions ̈ Max rDS on =117mΩ at VGS =10V, ID = 3.0A This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize
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FDS2734
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1A10A
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTP722MA ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline,
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ZXTP722MA
ZXT4M322
MLP322
1A10A
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A
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ZXTC6720MC
ZXTDE4M832
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1532B CPH6445 N-Channel Power MOSFET http://onsemi.com 60V, 3.5A, 117mΩ, Single CPH6 Features • 4V drive • Low ON-resistance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions
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ENA1532B
CPH6445
1200mm2Ã
A1532-5/5
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A
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ZXTC6720MC
ZXTDE4M832
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MLP322
Abstract: ZXT4M322 ZXTD4M322TA ZXTD4M322TC
Text: ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation PNP transistor offers extremely low on state
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ZXT4M322
MLP322
MLP322
ZXT4M322
ZXTD4M322TA
ZXTD4M322TC
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN*A2294 PCP1403 Advance Information http://onsemi.com N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP Features • On-resistance RDS on 1=92mΩ(typ.) • 4V drive • Protection Diode in • Halogen free compliance Specifications
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A2294
PCP1403
600mm2Ã
A2294-5/5
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FET MARKING QG
Abstract: 117M marking 12V 1A MOSFET N-channel SMG2304 27a diode
Text: SMG2304 2.7A, 25V,RDS ON 117mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L SC-59 Description The SMG2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
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SMG2304
SC-59
SMG2304
01-Jun-2002
FET MARKING QG
117M marking
12V 1A MOSFET N-channel
27a diode
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTP722MA ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline,
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ZXTP722MA
ZXT4M322
MLP322
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310DG
Abstract: FET MARKING QG 117M marking SMG2304A
Text: SMG2304A 2.5A, 30V,RDS ON 117mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L SC-59 Description The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG2304A is
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SMG2304A
SC-59
SMG2304A
01-Jun-2002
310DG
FET MARKING QG
117M marking
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1532A CPH6445 N-Channel Power MOSFET http://onsemi.com 60V, 3.5A, 117mΩ, Single CPH6 Features • • • 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage
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ENA1532A
CPH6445
PW10s,
1200mm2
A1532-7/7
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PCP1403-TD-H
Abstract: No abstract text available
Text: Ordering number : ENA2294A PCP1403 N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP http://onsemi.com Features • On-resistance RDS on 1=92mΩ(typ.) • 4V drive • Protection Diode in • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C
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ENA2294A
PCP1403
600mm2Ã
A2294-5/5
PCP1403-TD-H
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AP2304GN
Abstract: N4 SOT-23 CODE n4 marking code sot 23
Text: AP2304GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small package outline D ▼ Surface mount package BVDSS 25V RDS ON 117mΩ ID 2.7A S SOT-23 Description G Advanced Power MOSFETs from APEC provide the
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AP2304GN
OT-23
AP2304GN
N4 SOT-23 CODE
n4 marking code sot 23
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FDS2734
Abstract: No abstract text available
Text: FDS2734 N-Channel UItraFET Trench MOSFET tm 250V, 3.0A, 117mΩ Features General Descriptions This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching
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FDS2734
FDS2734
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"dual TRANSISTORs" pnp npn
Abstract: dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034
Text: ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,
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ZXTDE4M832
"dual TRANSISTORs" pnp npn
dual npn
MLP832
ZXTDE4M832
ZXTDE4M832TA
ZXTDE4M832TC
power ic 5v 1A 034
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Untitled
Abstract: No abstract text available
Text: AP2304AGN-HF Halogen-Free Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D RDS ON Small Package Outline ID Surface Mount Device 30V 117m 2.5A S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques
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AP2304AGN-HF
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: WTC2304 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 2.7 AMPERES DRAIN SOUCE VOLTAGE 25 VOLTAGE P b Lead Pb -Free 1 GATE Features: 2 SOURCE 3 * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V * Rugged and Reliable 1 2
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WTC2304
SC-59
09-May-05
WT2304
SC-59
26-Nov-08
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WTC2302
Abstract: WTC2304
Text: WTC2304 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 2.7 AMPERS P b Lead Pb -Free DRAIN SOUCE VOLTAGE 25 VOLTAGE 1 GATE Features: 2 SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable 1 2 SOT-23
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WTC2304
OT-23
OT-23
09-May-05
WTC2302
WTC2302
WTC2304
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2304AGN-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Small Package Outline 30V R DS ON Surface Mount Device G RoHS-compliant, halogen-free 117mΩ ID 2.5A S Description D Advanced Power MOSFETs from APEC provide the designer with the best
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AP2304AGN-HF-3
AP2304AGN-3
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: SC43 SMD POWER INDUCTORS 1. 2 XXX 4. 8 1. 8 4. 5 MARKING ● Features 1. Open frame construction. ELECTRICAL CHARACTERISTICS 2 (1) SC43-1R0 SC43-1R4 SC43-1R8 SC43-2R2 SC43-2R7 SC43-3R3 SC43-3R9 SC43-4R7 SC43-5R6 SC43-6R8 SC43-8R2 SC43-100 SC43-120 SC43-150
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SC43-1R0
SC43-1R4
SC43-1R8
SC43-2R2
SC43-2R7
SC43-3R3
SC43-3R9
SC43-4R7
SC43-5R6
SC43-6R8
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Untitled
Abstract: No abstract text available
Text: SC43 SMD POWER INDUCTORS 1. 2 XXX 4. 8 1. 8 4. 5 MARKING Features 1. Open frame construction. ELECTRICAL CHARACTERISTICS 2 (1) SC43-1R0 SC43-1R4 SC43-1R8 SC43-2R2 SC43-2R7 SC43-3R3 SC43-3R9 SC43-4R7 SC43-5R6 SC43-6R8 SC43-8R2 SC43-100 SC43-120 SC43-150 SC43-180
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SC43-1R0
SC43-1R4
SC43-1R8
SC43-2R2
SC43-2R7
SC43-3R3
SC43-3R9
SC43-4R7
SC43-5R6
SC43-6R8
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Untitled
Abstract: No abstract text available
Text: SCRH4D28 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH4D28-1R2 SCRH4D28-1R8 SCRH4D28-2R2 SCRH4D28-2R7 SCRH4D28-3R3 SCRH4D28-3R9
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SCRH4D28
SCRH4D28-1R2
SCRH4D28-1R8
SCRH4D28-2R2
SCRH4D28-2R7
SCRH4D28-3R3
SCRH4D28-3R9
SCRH4D28-4R7
SCRH4D28-5R6
SCRH4D28-6R8
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BC1210
Abstract: SC-12102
Text: SC1210 SMD POWER INDUCTORS XXX MARKING ● Features 1. 2 3 4 Open frame construction Low DCR Excellent Power Density Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance Ω MAX (2) (1) Saturation Temperature (3) (4) Current Current
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SC1210
SC1210
BC1210
SC1210-1R0
SC1210-2R2
SC1210-4R7
SC1210-100
SC1210-220
SC1210-470
SC1210-101
SC-12102
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Untitled
Abstract: No abstract text available
Text: SC1210 SMD POWER INDUCTORS XXX MARKING 1. 2 3 4 Features Open frame construction Low DCR Excellent Power Density Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS Inductance Test uH Frequency DC Resistance ( MAX) (2) (1) Saturation Temperature
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SC1210
SC1210-2R2
SC1210-4R7
SC1210-100
SC1210-220
SC1210-470
SC1210-101
SC1210-221
560uH:
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