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    310DG

    Abstract: FET MARKING QG 117M marking SMG2304A
    Text: SMG2304A 2.5A, 30V,RDS ON 117mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L SC-59 Description The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG2304A is


    Original
    SMG2304A SC-59 SMG2304A 01-Jun-2002 310DG FET MARKING QG 117M marking PDF