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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Ratings and C haracteristics 2 1. Out 1ine Drawings T0-3PF 2. Absolute Maximum Ratings S C 4 5 of 3 F u ji 8 Power Transistor R Tc=25°C Symbol Item Maximum Rating Collector-Base Voltage Vcao 9 0 0 Co 11ecto r-Em i tte r Vo 1tage Vceo 8 0 0 Emitter-Base Voltage


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    11ecto Q257-R-003a 2SC4538R PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60GT60BR ADVANCED POW ER Te c h n o l o g y 600V 116A Thunderbolt IGBT The Thunderbolt IGBT is a new generation ot high voltage power IGBTs. Using Non-Punch ThroughTechnology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.


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    APT60GT60BR 150KHz 100jiH, MIL-STD-750 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOLI» STATE DEVICES INC 12E D |fi3bLQll D00207S S | Pr eliminary Data Sheet f - 32-07 .-• .— — — - ■ ■ SFT3997 SSDI 5 AMP HIGH SPEED NPN TRANSISTOR 14849 FIRESTONE BLVD. LA MIRADA, CA. 90638 213 921-9660 FAX (213) 921-2396 150 VOLTS e; s t y l e :


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    D00207S SFT3997 100MHz SFT5001 11ector-Emitter 10Vdc, 20Vdc, 100mAdc, 300ps, G0207t, PDF

    KPC357NT

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATION Photocoupler cosmo KPC357NT ELECTRONICS CO.,LTD. SHEET 1 OF 6 Mini-flat package General purpose Photocoupler • Features 1. Opaque type,mini-flat package. 2. Subminiature type The volume is smaller than that of our conventional DIP type by as far as 30%


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    KPC357NT 3750Vrms) KPC357NT PDF

    transistor CD 910

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SSDI y oo S P T 3571 HIGH FREQUENCY TRANSISTOR NPN CASE STYLE 14830 VALLEY VIEW LA MIRADA, CA.90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES ► t t 900 MHz fT MIN, 4 GHz fT MAX GOLD EUTECTIC DIE ATTACH LOW NOISE FIGURE < 4 dB


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    PDF

    18AF

    Abstract: BUT18AF BUT18F UT18 BUT18
    Text: N AMER P H I L I P S / D I S C R E T E bTE T> m 0020441 3Tb I IAPX BUT18F BUT18AF SILICO N D IFFU SED PO W ER T R A N SISTO R S High-voltage, high-speed, glass-passivated npn power transistors in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control


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    bbS3R31 BUT18F BUT18AF OT186 18AF BUT18AF UT18 BUT18 PDF

    BQX54

    Abstract: BCX56 BCX54 71A marking BCX51 BCX52 BCX53 BCX54-10 BCX54-16 BCX55
    Text: • bhS3^31 0024tD&#39;ì 1T3 HiAPX N AUER PHILIPS/DISCRETE BCX54 BCX55 BCX56 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages


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    G024tD" BCX54 BCX55 BCX56 BCX51, BCX52 BCX53 BCX55 BQX54 BCX56 BCX54 71A marking BCX51 BCX54-10 BCX54-16 PDF

    B179G

    Abstract: SFT177G SFT179G
    Text: PRELIMINARY DATASHEET SFT179G 7 AMP HIGH PNP SSDI ENERGY 14849 FIRESTONE BLVD. LA MIRADA, CA 90638 TEL: 213 921-9660 FAX: (213) 921-2396 TRANSISTOR 80 VOLTS FEATURES t t ► t t t MAXIMUM DESIGNED FOR COMPLIMENTARY USE WITH SFT177G VERY RUGGED, SINGLE DIFFUSED CONSTRUCTION


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    SFT179G SFT177G 30Vdc, B179G SFT177G SFT179G PDF

    KPC353T

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATION Photocoupler cosmo ELECTRONICS CO.,LTD. KPC353T High Reliability Photocoupler • Features 1. With base terminal. 2. Applicable to infrared ray reflow. 230° C, MAX. 30 seconds 3. High isolation voltage. (Viso : 3750Vrms) 4. Mini-flat package.


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    KPC353T 3750Vrms) KPC353T PDF

    MS6M0255

    Abstract: No abstract text available
    Text: This materiol and the information herein it the p ro p erty of Fu|t Elecinc Co .Lid They shall bo neither reproduced, copied lorn, or disclosod in any way whatsoever for iha use of any thiid parly.nof usod for itie manufacturing purposes without the express w ritten consent of Fuji Electric Co. Ltd.


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    H04-004-03 MS6M0255 PDF

    fuji igbt 300v 20a

    Abstract: No abstract text available
    Text: This m aieriol and the Information herein Is ha properly of FujS Electric Co .Ltd They shall be neither reproduced, cop ie d lent, or disclosed in any way w hatsoever (or the use of any third party.nor used lor the manufacturing purposes w ithout the express written con sent of Fu|l Electric Co. Ltd.


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    JuIy-15-1997 H04-004-0T July-15-1997 H04-004-2T 125eC H04-004-03T MS5F4086 H04-004-03 fuji igbt 300v 20a PDF

    TH50

    Abstract: fuji igbt tentative
    Text: S P E C I F I C A T I ON TENTATIVE Product Name : T M B R 1 5 P E l l l Type Name This m a le iia l nod (he inform ation heicn is llu; p io p c i ty of Fu|i £ Ite Inc Co.Lid They shüll ht* neither lepiuduted co p im i lent 01 disclosed in any way w h a ts o e v e i loi the usi; ol a n y


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    TMBR15PE120 MT6M1816 TH50 fuji igbt tentative PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet HOE D SOLID STATE DEVICES INC SLC4 - 6T i H I G H M O U N T 800 C A S E 5 T Y I 4-PIN L.C.C. SSDI AMP V O L T A G E . S U R F A C E asbton oooans b N P N 14849 FIRESTONE BLVD. LA MIRADA, CA 90638 TEL: 213 921-9660 FAX: (213) 921-2396


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    11ector-Emitter To000 10MHz) PDF

    Untitled

    Abstract: No abstract text available
    Text: VKILK itLHNULQ&Y INC 4fiE D • L 7 T S 5 B 0 D0D14flT m ^ ■ OTK Product Bulletin May 1989 * £ } /• U ^ /^ D T C I^ r lt lV Hi-Rel Slotted Optical Switches ' l Type 0PB870N Series ET s <2> - A N O O E ID E N T IF IE R BOTTOM VIEW 495 2 57 475(2 07) '


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    D0D14flT 0PB870N OPB872 OPB87Ã 0PB871 0PB872 OPB870 OPB871 PDF

    Untitled

    Abstract: No abstract text available
    Text: T - 3 3 - / jT Prel i m i n a r y Data Sheet 1SE D Jfl3bb011 ODOEDfl? T | SOLID STATE DEVICES INC SFT1618 SSDI 10 AMP HIGH VOLTAGE NPN TRANSISTOR 1500 VOLTS CASE STYLE TO-3 * * t t * * 14830 VALLEY VIEW LA MIRADA, C A . 90638 213 921-9660 TWX 910-583-4807


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    Jfl3bb011 SFT1618 500nS 11ector-Emitter PDF

    Untitled

    Abstract: No abstract text available
    Text: X Target 1. Outline D r a w i n g Specification Unit of 1 M B I 4 0 O S A - 1 2 0 : mm ô-g > ì 3 °ï S-c 8 « o t> 3 il à 'é » S e "D •£ Q. *13 Jfoi w 0> « c o B O > *c « o -tr O S “ ÜJÎF 5 ÍÉ ° •£I *5 5 r' rce wO 5u ■C 3 ’.s x> V


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: M SPECIFICATION DEVICE NAME :_ I G B T TYPE NAME : 1MBH1 5 D - Q 6 SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. D A TE NAME APPROVED Fuji Electric Co,Ltci DRAWN CHECKED 1/12 H04-004-07 Ratings and characteristics of Fuji IGBT


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    H04-004-07 H04-004-03 PDF

    2N6294

    Abstract: 2N6297 2N6295 2N6296 ic1.5a
    Text: Datasheet 2N6294 2N6295 NPN 2N6296 2N6297 PNP C OM P LE ME NT AR Y SILICON DARLI NG T O N POWER TR AN SISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors


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    2N6294 2N6295 2N6296 2N6297 T0-66 2N629b 2N6295 2N6296 2N6297 ic1.5a PDF

    PZTA63

    Abstract: PZTA64
    Text: • bbSBTBl DD2b023 TbE H A P X N AMER PH ILIPS/DISCRETE PZTA63 PZTA64 L7E » SM ALL-SIG NAL DARLINGTON TRANSISTORS PIMP small-signal D a rlin g to n transistors in a m icro m in ia tu re SM D envelope SO T-223 . Designed p rim a rily f o r p re a m p lifie r in p u t applications requiring high in p u t impedance.


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    D2b023 PZTA63 PZTA64 OT-223) PZTA13/14. OT-223 pzta64 PDF

    Untitled

    Abstract: No abstract text available
    Text: pa rt y written nor the in any for the way herein neither w hatsoever be is thfc the use purposes for o any w ith o u t of cop ied, property reproduced, m an ufacturin g s h a ll in for m atio n c o n s e n t of Fuji EJectr ic Co. .Llii. used disclosed or


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    MS5F-4089 1MBH05D-120-S06TT June-11-1998 H04-004 H04-004-03 PDF

    6MB 125 S-1 2 0 l

    Abstract: DT225 75L-060 BT600 6MB 125 S-120
    Text: 6MBI75L-060 _ _ . _ IGBT MODULE L series 6-Pack IGBT Wï Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter for M otor Drive • AC and DC Servo Drive A m p lifier • U ninterruptible Pow er Supply


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    75L-060 6MB 125 S-1 2 0 l DT225 75L-060 BT600 6MB 125 S-120 PDF

    IC15AV

    Abstract: No abstract text available
    Text: M SPECIFICATION DEVICE NAME :_ I G B T TYPE NAME : 1MBH1 5 D - Q 6 SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. D A TE NAME APPROVED Fuji Electric Co,Ltci DRAWN CHECKED 1/12 H04-004-07 Ratings and characteristics of Fuji IGBT


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    H04-004-07 H04-004-03 H04-004-03 IC15AV PDF

    Mil-S-45743

    Abstract: OPB slotted optical switch OPB870T QPB870T 0PB872
    Text: OPTEK T E CH NO LO GY INC 4flE D b7TflSS0 D O O m T3 t.7T OTK Product Bulletin OPTEK May 1989 Tm-13 Hi-Rel Slotted Optical Switches Type QPB870T Series Features A b so lu te M a x im u m R a tin g s TA = 25°C unless otherwise noted • Non-contact switching


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    OPB870T Tm-13 MIL-S-45743 MIL-S-19500 500ms Mil-S-45743 OPB slotted optical switch QPB870T 0PB872 PDF

    irgph30k

    Abstract: IRGPH30M irgph30
    Text: International lO R Rectifier PD -9 .1 5 8 0 IRG4PH30K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR F e a tu re s a • High short circuit rating optimized for motor control, tsc = 10|J.s, V cc = 720V , T j = 125°C, VGE= 15V


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    IRG4PH30K irgph30k IRGPH30M irgph30 PDF