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    TSDF1205F

    Abstract: No abstract text available
    Text: TSDF1205F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a


    Original
    PDF TSDF1205F OT490 D-74025 11-Sep-02 TSDF1205F

    Untitled

    Abstract: No abstract text available
    Text: SR Vishay Dale Wirewound Resistors, Open Air, Current Sense, Low Value FEATURES • Open air design • Low resistance values for all types of current sensing, voltage division and pulse applications including switching and linear supplies, instrumentation and power amplifiers


    Original
    PDF 2000Hz 25mm/second MIL-STD-202 11-Sep-02

    Untitled

    Abstract: No abstract text available
    Text: SR Vishay Dale Wirewound Resistors, Open Air, Current Sense, Low Value FEATURES • Open air design • Low resistance values for all types of current sensing, voltage division and pulse applications including switching and linear supplies, instrumentation and power amplifiers


    Original
    PDF 2000Hz 25mm/second MIL-STD-202 11-Sep-02

    TSDF1220F

    Abstract: No abstract text available
    Text: TSDF1220F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a


    Original
    PDF TSDF1220F OT490 D-74025 11-Sep-02 TSDF1220F

    MBRF2090CT

    Abstract: MBR20100CT MBR2090CT MBRB20100CT MBRB2090CT MBRF20100CT
    Text: MBR20100CT, MBRF20100CT & MBRB20100CT Series Vishay Semiconductors New Product formerly General Semiconductor Dual High-Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 20A ITO-220AB MBRF2090CT, MBRF20100CT 0.188 (4.77) 0.172 (4.36)


    Original
    PDF MBR20100CT, MBRF20100CT MBRB20100CT ITO-220AB MBRF2090CT, MBRF20100CT) O-220AB MBR2090CT, MBR20100CT) 11-Sep-02 MBRF2090CT MBR20100CT MBR2090CT MBRB2090CT MBRF20100CT

    TSDF1250F

    Abstract: No abstract text available
    Text: TSDF1250F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a


    Original
    PDF TSDF1250F OT490 D-74025 11-Sep-02 TSDF1250F

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SHEET V I S H A Y I N T E R T E C H N O L O G Y, I N C . RESISTORS Model SR High-Power, Low-Value, Open-Air, Wirewound Radial Leaded Resistor FEATURES • All welded construction • High Power: 5 watts at + 70°C • Low Resistance Value: 0.004 Ω to 0.05 Ω


    Original
    PDF 2000Hz 25mm/second MIL-STD-202 Weight/1000 11-Sep-02 VMN-PT9061-0210

    SK 09 D 08

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FÖR PUBUÒÀT10H- BY TYCO ELECTRONICS CORPORATION. LDC ALL RIGHTS RESERVES. FT REVISIONS DIST P LTR A DATE DWN APVD 9/11/02 ss CR DESCRIPTION RELEASED NOTES: A MATERIAL: HOUSING: P O L Y A M I D E 6 UL 9 ^ -V -2


    OCR Scan
    PDF T10H---- TSB500 T5B500 11SEP02 31MAR2000 SK 09 D 08