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Catalog Datasheet	MFG & Type	Document Tags	PDF
VEC2803 Abstract: No abstract text available Text: VEC2803 Ordering number : ENN8202 VEC2803 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package	Original	VEC2803 ENN8202 VEC2803	PDF
VEC2803 Abstract: No abstract text available Text: VEC2803 注文コード No. N 8 2 0 2 三洋半導体データシート N VEC2803 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード汎用スイッチングデバイス特長・DC / DC コンバータ用。	Original	VEC2803 900mm2 12505PE TB-00001017 IT08214 IT08216 IT07948 VEC2803	PDF
MCH3335 Abstract: MCH5810 SBS011 Text: MCH5810 Ordering number : ENN8194 MCH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a P-Channel Sillicon MOSFET MCH3335 and a Schottky Barrier Diode (SBS011) contained in one package facilitating high-density mounting.	Original	MCH5810 ENN8194 MCH3335) SBS011) MCH3335 MCH5810 SBS011	PDF
CPH6610 Abstract: MCH3335 CPH6610 marking Text: CPH6610 Ordering number : ENN8167 CPH6610 N-Channel and P-Channel Silicon MOSFETs Load Switching Applications Features • • The CPH6610 incorporates a P-channel MOSFET MCH3335 and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.	Original	CPH6610 ENN8167 CPH6610 MCH3335) MCH3335 CPH6610 marking	PDF
CPH6613 Abstract: MARKING FZ Text: CPH6613 Ordering number : ENN8182 CPH6613 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with two MOSFETs contained in a single package facilitating high-density mounting.	Original	CPH6613 ENN8182 900mm2 15Ltd. CPH6613 MARKING FZ	PDF
marking ZY Abstract: MCH3447 Text: MCH3447 Ordering number : ENN8200 N-Channel Silicon MOSFET MCH3447 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol	Original	MCH3447 ENN8200 900mm2 marking ZY MCH3447	PDF
CPH6613 Abstract: No abstract text available Text: CPH6613 注文コード No. N 8 1 8 2 三洋半導体データシート N CPH6613 N チャネル MOS 形シリコン電界効果トランジスタ汎用スイッチングデバイス特長・低オン抵抗。・超高速スイッチング。・1.8V 駆動。	Original	CPH6613 900mm2 900mm2 IT07191 IT07192 CPH6613	PDF
CPH6610 Abstract: MCH3335 MCH3408 Text: CPH6610 注文コード No. N 8 1 6 7 三洋半導体データシート N CPH6610 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタロードスイッチング用特長・低オン抵抗超高速スイッチングの P チャネル MCH3335 および N チャネル MOS 形電界効果トランジスタ	Original	CPH6610 MCH3335) MCH3408) 900mm2 700mA 700mA, 400mA, IT08165 900mm2 CPH6610 MCH3335 MCH3408	PDF
ECH8616 Abstract: No abstract text available Text: ECH8616 Ordering number : ENN8191 N-Channel Silicon MOSFET ECH8616 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C	Original	ECH8616 ENN8191 900mm2 ECH8616	PDF
MCH3335 Abstract: MCH5810 SBS011 Text: MCH5810 注文コード No. N 8 1 9 4 三洋半導体データシート N MCH5810 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用特長・P チャネル MOS 形電界効果トランジスタ（MCH3335）	Original	MCH5810 MCH3335 SBS011 900mm2 12505PE TB-00001111 IT08704 IT08703 MCH3335 MCH5810	PDF