C1507
Abstract: C1504 C1502 c1509 C150 CY7C150 R1329
Text: CY7C150 1Kx4 Static RAM Features Separate I/O paths eliminates the need to multiplex data in and data out, providing for simpler board layout and faster system performance. Outputs are three-stated during write, reset, deselect, or when output enable OE is held HIGH, allowing for
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CY7C150
C1507
C1504
C1502
c1509
C150
CY7C150
R1329
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C1507
Abstract: C150 CY7C150 R1329 C1509 C1502
Text: 1CY 7C15 0 CY7C150 1Kx4 Static RAM Features Separate I/O paths eliminates the need to multiplex data in and data out, providing for simpler board layout and faster system performance. Outputs are three-stated during write, reset, deselect, or when output enable OE is held HIGH, allowing
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CY7C150
C1507
C150
CY7C150
R1329
C1509
C1502
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation
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P4C164
Oct-05
Jun-06
Aug-06
SRAM115
P4C164
28-pin
SRAM115
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1K x4 static ram
Abstract: C150 CY7C150 R1329 C1507 C1502
Text: 50 CY7C150 1Kx4 Static RAM Features Separate I/O paths eliminates the need to multiplex data in and data out, providing for simpler board layout and faster system performance. Outputs are three-stated during write, reset, deselect, or when output enable OE is held HIGH, allowing
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CY7C150
Cy7C150
1K x4 static ram
C150
R1329
C1507
C1502
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C123
Abstract: CY7C123 P13A
Text: CY7C123 256 x 4 Static RAM Features Functional Description • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial The CY7C123 is a high-performance CMOS static RAM organized as 256 words by 4 bits. Easy memory expansion is provided by an active LOW chip select one (CS1) input, an active
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CY7C123
CY7C123
24-Lead
C123
P13A
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100DM
Abstract: 1519B P4C164 P4C164L
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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P4C164
28-Pin
100ns)
32-Pin
100DM
1519B
P4C164
P4C164L
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7cl6
Abstract: D-2501 CY7C161A CY7C162 CY7C162A
Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese lected • Transparent write 7C161A • CMOS for optimum speed/power
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CY7C161A
CY7C162A
7C161A)
CY7C162
au62A-35DMB
CY7C162Aâ
35KMB
CY7C162A-35LMB
CY7C162A-45DMB
7cl6
D-2501
CY7C162A
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TP 152N
Abstract: CI23 k7315 2A mosfet igbt driver stage as256words CY7C123
Text: MbE D CYPRESS SEMICONDUCTOR E3 2 S 0 ciL.iJ2 D D O b B I R 7 C l C Y P CY7C123 CYPRESS SEMICONDUCTOR Functional Description 256 x 4 static RAM for control store in high-speed computers CMOS foroptimum speed/power High speed — 7 ns commercial — 10 ns (military)
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QQQta31R
CY7C123
300-mil
CY7C123
as256words
CY7C123-12LC
CY7C123â
12DMB
12LMB
TP 152N
CI23
k7315
2A mosfet igbt driver stage
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K73 Package
Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
Text: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when
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CY7C164A
CY7C166A
384x4
CY7C166A
35DMB
CY7C166Aâ
35KMB
CY7C166A-35LMB
K73 Package
3 phase inverter schematic diagram
7C166
CI64A
CY7C164A-45DMB
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12L10
Abstract: 16L6 20L10 20L8 PLD20G10C 12DC
Text: 4bE SEMICONDUCTOR SSÔTbtS D OGGbTMM PRELIMINARY CYPRESS SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsu = 3 ns — fM A X = 1 0 5 M tte • Reduced ground bounce and under
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PLD20G10C
24-Pin
10SMHZ
20L10,
12L10
PLD20G10C-
10KMB
10LMB
16L6
20L10
20L8
PLD20G10C 12DC
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Untitled
Abstract: No abstract text available
Text: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when
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CY7B194
CY7B195
CY7B196
CY7B195
CY7B196
CY7B194,
7B195,
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Untitled
Abstract: No abstract text available
Text: PAL22V10C _ PAL22VP10C Universal PAL Device SEMICONDUCTOR Features • • Ultra high speed supports today’s and tomorrow’s fastest microprocessors 10 user>programmable output macrocells — Output polarity control — Registered or combinatorial
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PAL22V10C
PAL22VP10C
PAL22VP10C)
28-Pin
PAL22VP10CM
28-Square
PAL22VP10CM
15KMB
12YMB
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Untitled
Abstract: No abstract text available
Text: CY7B161 CY7B162 f ' YPPI7QC! SEMICONDUCTOR Features Functional Description • U ltra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write (7B161 • BiCMOS for optimum speed/power • TTL-compatible inputs and outputs
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CY7B161
CY7B162
7B161)
CY7B161
CY7B162
7B161
8-A-00014-D
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Untitled
Abstract: No abstract text available
Text: CY7B191 CY7B192 PRELIMINARY F CYPRESS SEMICONDUCTOR 64Kx 4 Static R/W RAM with Separate I/O Features Functional Description • High speed T he CY7B191 and CY7B192 are highperformance BiCMOS static RAM s orga nized as 64K words by 4 bits with separate I/O. Easy m em oiy expansion is provided
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CY7B191
CY7B192
CY7B191
CY7B192
7B191)
7B191
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16X64
Abstract: C123-6 c1235 P13A C1232
Text: CY7C123 256 x 4 Static RAM Features tion operation ensures minimum write re covery times by eliminating the “write re covery glitch.” Functional Description • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power
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CY7C123
300-mil
16X64
C123-6
c1235
P13A
C1232
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CY7B161
Abstract: CY7B162 A10C CY7B162-15DMB
Text: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O into th e m em ory location specified on the address pins Ao through A 1 3 . Features Functional Description • Ultra high speed — 8 n s tAA • Low active power — 700 mW • Low standby power
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7B161)
CY7B161
CY7B162
CY7B162â
15LMB
28-Pin
7B161
8-A-00014-E
A10C
CY7B162-15DMB
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7B339
Abstract: 7B339-7
Text: CY7B339 PRELIMINARY CYPRESS SEMICONDUCTOR 7-ns BiCMOS PAL with Output Latches • Available in 28-pin 340-mil PDIP and CerDIP, and in SOJ, PLCC, and LCC packages Features • Very high performance decoder with latched outputs — tpo = 7 ns — tLEO = 5-5 ns
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CY7B339
28-pin
300-mil
CY7B339â
CY7B339
7B339
7B339-7
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PLD610-10
Abstract: 85C060 D610 p EP610 "pin compatible" PLD610
Text: PLD610 PRELIMINARY CYPRESS SEMICONDUCTOR Multipurpose BiCMOS PLD Function, pin, and JEDEC compatible with EP600, EP610, EP630,85C060, and PALCE610 PLDs Very high performance — tpo = 10 ns 16 I/O macrocells, each having: — Choice of combinatorial or regis
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PLD610
EP600,
EP610,
EP630
85C060,
PALCE610
PLD610
24-pin,
PLD610-10
85C060
D610 p
EP610 "pin compatible"
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Untitled
Abstract: No abstract text available
Text: CY7B161 CY7B162 n Y p p p c q Features Functional D escription • Ultra high speed T he CY7B161 and CY 7B162 are highperform ance B iC M O S static R A M s orga nized as 16,384 by 4 bits w ith separate I/O . Easy m em ory expansion is provided by ac tive LO W chip en ab les Cl'-i, CF-2 and
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CY7B161
CY7B162
7B162
AWE1151
7H161
8-A-00014-D
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CY7CI85
Abstract: CY7C185A-55DMB
Text: CY7C185A CY7C186A CYPRESS SEMICONDUCTOR 8 ,1 9 2 x 8 Static RAV RAM enable W £ inputs are both LOW, and the chip enable two (CE2) input is HIGH. Data The CY7C185A and CY7C186A are high- on the eight I/O pins (I/Oo through I/O7) is performance CMOS static RAMs orga written into the memory location specified
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CY7C185A
CY7C186A
CY7C186A
CY7C186A-
12DMB
CY7C186A-12LM
7C186A-
15DMB
CY7C186A--15LMB
CY7CI85
CY7C185A-55DMB
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7B338
Abstract: ic 7b338
Text: CY7B338 PRELIMINARY CYPRESS SEMICONDUCTOR • Available in 28>pin 300-mil PDIP and CerDIP, and in SOJ, PLCC, and LCC packages • Very high performance decoder with latched outputs — tpj — 6 ns Functional Description T he CY7B338 is a 6-ns, 28-pin p ro g ram
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CY7B338
7B338
CY7B338
7B338--7LMB
7B338--8VC
7B338--10DMB
7B338--10LMB
12DMB
ic 7b338
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CY7C185A
Abstract: 7C186A-35 7C186A-55 7C185A-55 7c186a 7C116 7C186A-25
Text: CYPRESS SEMICONDUCTOR MbE D B ESflSbb? OdDbbGM b E3CYP CY7C185A CY7C186A 'T M ^ V h -X V CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed — 20 ns Low active power — 990 mW Low standby Power — 220 mW
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CY7C185A
CY7C186A
20Q1V
CY7C186A
CY7C186Aâ
45DMB
CY7C186A-45LMB
CY7C186
CY7C186A-55LMB
7C186A-35
7C186A-55
7C185A-55
7c186a
7C116
7C186A-25
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r1329i1
Abstract: CY7C150 HW* 2308
Text: GOGbMia R cacYP MtiE D CYPRESS SEMICONDUCTOR T - % '- L V 0 & _CY7C150 WÆ CYPRESS SEMICONDUCTOR 1024 x 4 Static R/W RAM Features Functional Description • Memory reset function • 1024 x 4 static RAM for control store In high-speed computers
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CY7C150
CY7C150
G00bM2S
T-46-23-08
38-00028-B
r1329i1
HW* 2308
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Untitled
Abstract: No abstract text available
Text: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static RAV RAM Features Functional Description • Ultra high speed — tAA = 8 ns T h e CY7B164 an d CY 7B166 a re highp erform ance BiC M O S static R A M s org a nized as 16,384 x 4 bits. Easy m em ory ex
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CY7B164
CY7B166
7B166)
7B166--12LMB
7B166--15DMB
7B166--15LMB
7B166
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