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    Microchip Technology Inc MIC2212-LMBML-TR

    IC REG LINEAR 2.7V/2.8V 10MLF
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    DigiKey MIC2212-LMBML-TR Reel 5,000
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    Teledyne e2v QP7C199-12LMB

    STATIC RAM, 32K X 8, 12 NS ACCESS TIME - Rail/Tube (Alt: QP7C199-12LMB)
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    Avnet Americas QP7C199-12LMB Tube 250
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    Teledyne e2v QP7C198L-12LMB

    STATIC RAM, 32K X 8, LOW-POWER, 12 NS AC - Rail/Tube (Alt: QP7C198L-12LMB)
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    Avnet Americas QP7C198L-12LMB Tube 250
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    Teledyne e2v QP7C198-12LMB

    STATIC RAM, 32K X 8, 12 NS ACCESS TIME - Rail/Tube (Alt: QP7C198-12LMB)
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    Avnet Americas QP7C198-12LMB Tube 250
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    Teledyne e2v QP7C199L-12LMB

    STATIC RAM, 32K X 8, LOW-POWER, 12 NS AC - Rail/Tube (Alt: QP7C199L-12LMB)
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    Avnet Americas QP7C199L-12LMB Tube 250
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    12LMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns) 536-bit

    Untitled

    Abstract: No abstract text available
    Text: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation


    Original     		PDF P4C164 Oct-05 Jun-06 Aug-06 SRAM115 P4C164 28-pin SRAM115

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns) P4C164 536-bit

    100DM

    Abstract: 1519B P4C164 P4C164L
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 28-Pin 100ns) 32-Pin 100DM 1519B P4C164 P4C164L

    7cl6

    Abstract: D-2501 CY7C161A CY7C162 CY7C162A
    Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power


    OCR Scan     		PDF CY7C161A CY7C162A 7C161A) CY7C162 au62A-35DMB CY7C162Aâ 35KMB CY7C162A-35LMB CY7C162A-45DMB 7cl6 D-2501 CY7C162A

    TP 152N

    Abstract: CI23 k7315 2A mosfet igbt driver stage as256words CY7C123
    Text: MbE D CYPRESS SEMICONDUCTOR E3 2 S 0 ciL.iJ2 D D O b B I R 7 C l C Y P CY7C123 CYPRESS SEMICONDUCTOR Functional Description 256 x 4 static RAM for control store in high-speed computers CMOS foroptimum speed/power High speed — 7 ns commercial — 10 ns (military)


    OCR Scan     		PDF QQQta31R CY7C123 300-mil CY7C123 as256words CY7C123-12LC CY7C123â 12DMB 12LMB TP 152N CI23 k7315 2A mosfet igbt driver stage

    K73 Package

    Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
    Text: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when


    OCR Scan     		PDF CY7C164A CY7C166A 384x4 CY7C166A 35DMB CY7C166Aâ 35KMB CY7C166A-35LMB K73 Package 3 phase inverter schematic diagram 7C166 CI64A CY7C164A-45DMB

    12L10

    Abstract: 16L6 20L10 20L8 PLD20G10C 12DC
    Text: 4bE SEMICONDUCTOR SSÔTbtS D OGGbTMM PRELIMINARY CYPRESS SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsu = 3 ns — fM A X = 1 0 5 M tte • Reduced ground bounce and under­


    OCR Scan     		PDF PLD20G10C 24-Pin 10SMHZ 20L10, 12L10 PLD20G10C- 10KMB 10LMB 16L6 20L10 20L8 PLD20G10C 12DC

    22V10D

    Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
    Text: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. standard — 120 mA max. military


    OCR Scan     		PDF PALC22V10D 100-MHz 83-MHz PALC22V10D 15DMB PALC22V10D- PALC22V10Dâ 15KMB PALC22V10D-15LMB 22V10D PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D-10JC

    Untitled

    Abstract: No abstract text available
    Text: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when


    OCR Scan     		PDF CY7B194 CY7B195 CY7B196 CY7B195 CY7B196 CY7B194, 7B195,

    Untitled

    Abstract: No abstract text available
    Text: PAL22V10C _ PAL22VP10C Universal PAL Device SEMICONDUCTOR Features • • Ultra high speed supports today’s and tomorrow’s fastest microprocessors 10 user>programmable output macrocells — Output polarity control — Registered or combinatorial


    OCR Scan     		PDF PAL22V10C PAL22VP10C PAL22VP10C) 28-Pin PAL22VP10CM 28-Square PAL22VP10CM 15KMB 12YMB

    Untitled

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 f ' YPPI7QC! SEMICONDUCTOR Features Functional Description • U ltra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write (7B161 • BiCMOS for optimum speed/power • TTL-compatible inputs and outputs


    OCR Scan     		PDF CY7B161 CY7B162 7B161) CY7B161 CY7B162 7B161 8-A-00014-D

    Untitled

    Abstract: No abstract text available
    Text: 7 PLD20G10C C YPRESS • Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors Generic 24-Pin PAL Device 10 user-programmable output macrocells — Output polarity control — Registered or combinatorial operation — tpo = 7.5 ns


    OCR Scan     		PDF PLD20G10C 24-Pin 24-Lead 300-MU) 28-Lead 300-Mil)

    Untitled

    Abstract: No abstract text available
    Text: CY7B191 CY7B192 PRELIMINARY F CYPRESS SEMICONDUCTOR 64Kx 4 Static R/W RAM with Separate I/O Features Functional Description • High speed T he CY7B191 and CY7B192 are highperformance BiCMOS static RAM s orga­ nized as 64K words by 4 bits with separate I/O. Easy m em oiy expansion is provided


    OCR Scan     		PDF CY7B191 CY7B192 CY7B191 CY7B192 7B191) 7B191

    CY7B161

    Abstract: CY7B162 A10C CY7B162-15DMB
    Text: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O into th e m em ory location specified on the address pins Ao through A 1 3 . Features Functional Description • Ultra high speed — 8 n s tAA • Low active power — 700 mW • Low standby power


    OCR Scan     		PDF 7B161) CY7B161 CY7B162 CY7B162â 15LMB 28-Pin 7B161 8-A-00014-E A10C CY7B162-15DMB

    7B339

    Abstract: 7B339-7
    Text: CY7B339 PRELIMINARY CYPRESS SEMICONDUCTOR 7-ns BiCMOS PAL with Output Latches • Available in 28-pin 340-mil PDIP and CerDIP, and in SOJ, PLCC, and LCC packages Features • Very high performance decoder with latched outputs — tpo = 7 ns — tLEO = 5-5 ns


    OCR Scan     		PDF CY7B339 28-pin 300-mil CY7B339â CY7B339 7B339 7B339-7

    PLD610-10

    Abstract: 85C060 D610 p EP610 "pin compatible" PLD610
    Text: PLD610 PRELIMINARY CYPRESS SEMICONDUCTOR Multipurpose BiCMOS PLD Function, pin, and JEDEC compatible with EP600, EP610, EP630,85C060, and PALCE610 PLDs Very high performance — tpo = 10 ns 16 I/O macrocells, each having: — Choice of combinatorial or regis­


    OCR Scan     		PDF PLD610 EP600, EP610, EP630 85C060, PALCE610 PLD610 24-pin, PLD610-10 85C060 D610 p EP610 "pin compatible"

    Untitled

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 n Y p p p c q Features Functional D escription • Ultra high speed T he CY7B161 and CY 7B162 are highperform ance B iC M O S static R A M s orga­ nized as 16,384 by 4 bits w ith separate I/O . Easy m em ory expansion is provided by ac­ tive LO W chip en ab les Cl'-i, CF-2 and


    OCR Scan     		PDF CY7B161 CY7B162 7B162 AWE1151 7H161 8-A-00014-D

    CY7CI85

    Abstract: CY7C185A-55DMB
    Text: CY7C185A CY7C186A CYPRESS SEMICONDUCTOR 8 ,1 9 2 x 8 Static RAV RAM enable W £ inputs are both LOW, and the chip enable two (CE2) input is HIGH. Data The CY7C185A and CY7C186A are high- on the eight I/O pins (I/Oo through I/O7) is performance CMOS static RAMs orga­ written into the memory location specified


    OCR Scan     		PDF CY7C185A CY7C186A CY7C186A CY7C186A- 12DMB CY7C186A-12LM 7C186A- 15DMB CY7C186A--15LMB CY7CI85 CY7C185A-55DMB

    Untitled

    Abstract: No abstract text available
    Text: PLD20G10C ¡5 r CYPRESS SEMICONDUCTOR Features • • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns Generic 24-Pin PAL Device 10 user-programmable output macrocells — Output polarity control U sing B iC M O S process and Ti-W fuses,


    OCR Scan     		PDF PLD20G10C 24-Pin 300-M 24-Lead 300-Mil) 24-Lead 28-Square

    c258

    Abstract: CERAMIC LEADLESS CHIP CARRIER h67 YW PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC
    Text: CY7C258 CY7C259 CYPRESS 2Kx 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation T h e CY7C258 and CY7C259 a re 2K x 16 C M O S P R O M s specifically designed for use in state m achine applications. — tc p — 10 ns


    OCR Scan     		PDF CY7C258 CY7C259 100-MHz 11-bit-wide CY7C259) 28-pin, 300-mil CY7C259 44-pin c258 CERAMIC LEADLESS CHIP CARRIER h67 YW PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC

    12L10

    Abstract: 16L6 18L4 20L10 20L8
    Text: PLD20G10C i f CYPR ESS Features • 10 user-programmable output macrocells — Output polarity control — Registered or combinatorial operation — Pin or product term output enable control • Ultra high speed supports today’s and tomorrow’s fastest microprocessors


    OCR Scan     		PDF PLD20G10C 24-Pin 20L10, 12L10 PLD20G10C-12DMB 24-Lead 300-Mil) PLD20G10C 12KMB 24-Lead 16L6 18L4 20L10 20L8

    CY7C185A

    Abstract: 7C186A-35 7C186A-55 7C185A-55 7c186a 7C116 7C186A-25
    Text: CYPRESS SEMICONDUCTOR MbE D B ESflSbb? OdDbbGM b E3CYP CY7C185A CY7C186A 'T M ^ V h -X V CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed — 20 ns Low active power — 990 mW Low standby Power — 220 mW


    OCR Scan     		PDF CY7C185A CY7C186A 20Q1V CY7C186A CY7C186Aâ 45DMB CY7C186A-45LMB CY7C186 CY7C186A-55LMB 7C186A-35 7C186A-55 7C185A-55 7c186a 7C116 7C186A-25

    r1329i1

    Abstract: CY7C150 HW* 2308
    Text: GOGbMia R cacYP MtiE D CYPRESS SEMICONDUCTOR T - % '- L V 0 & _CY7C150 WÆ CYPRESS SEMICONDUCTOR 1024 x 4 Static R/W RAM Features Functional Description • Memory reset function • 1024 x 4 static RAM for control store In high-speed computers


    OCR Scan     		PDF CY7C150 CY7C150 G00bM2S T-46-23-08 38-00028-B r1329i1 HW* 2308