12N10 Search Results

12N10 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJMG1V812N101ER		Amphenol Communications Solutions	RJMG, Input output Connectors, 1x1,1G V/T with LEDs

12N10 Price and Stock

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Susumu Co Ltd RG2012N-104-W-T1 RES SMD 100K OHM 0.05% 1/8W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RG2012N-104-W-T1	Reel	56,000		1,000	1 - 10 - 100 - 1000 $0.28875 10000 $0.28875	Buy Now
New Advantage Corporation	RG2012N-104-W-T1		6,000		1	1 - 10 - 100 - 1000 $0.4357 10000 $0.4067	Buy Now
Susumu Co Ltd RG2012N-102-B-T5 RES SMD 1K OHM 0.1% 1/8W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RG2012N-102-B-T5	Cut Tape	2,593		1	1 $0.63 10 $0.447 100 $0.3076 1000 $0.20182 10000 $0.20182	Buy Now
	RG2012N-102-B-T5	Digi-Reel	2,593		1	1 $0.63 10 $0.447 100 $0.3076 1000 $0.20182 10000 $0.20182	Buy Now
Littelfuse Inc IXFH12N100P MOSFET N-CH 1000V 12A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH12N100P	Tube	570		1	1 $10.3 10 $10.3 100 $6.10867 1000 $4.78312 10000 $4.78312	Buy Now
RS	IXFH12N100P	Bulk		8 Weeks	30	1 - 10 - 100 $7.4 1000 $7.4 10000 $7.4	Get Quote
Amphenol Sine Systems FLS012N10P03 10 POSITION SQUARE FLANGE RECEPT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FLS012N10P03	Bag	100		1	1 $7.73 10 $6.992 100 $6.1216 1000 $4.51066 10000 $4.51066	Buy Now
Newark	FLS012N10P03	Bulk	100		1	1 $3.79 10 $3.79 100 $3.79 1000 $3.79 10000 $3.79	Buy Now
RS	FLS012N10P03	Bulk		12 Weeks	100	1 - 10 - 100 $6.44 1000 $5.37 10000 $5.37	Get Quote
Interstate Connecting Components	FLS012N10P03					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Amphenol Sine Systems FLS012N10PHEC03 10 POSITION SQUARE FLANGE RECEPT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FLS012N10PHEC03	Bag	100		1	1 $11.93 10 $10.576 100 $9.2203 1000 $7.21352 10000 $7.21352	Buy Now
Newark	FLS012N10PHEC03	Bulk	100		1	1 $6.38 10 $6.38 100 $6.38 1000 $6.38 10000 $6.38	Buy Now
RS	FLS012N10PHEC03	Bulk		12 Weeks	100	1 - 10 - 100 $10.84 1000 $9.03 10000 $9.03	Get Quote
Interstate Connecting Components	FLS012N10PHEC03					1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 12N10 price and stock on Findchips.com

12N10 Datasheets (40)

Part	Manufacturer	Description	Datasheet Type	PDF
12N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
12N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
12N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
12N10L	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
12N10L	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
12N-10M	Inmet	ATTENUATOR	Scan	PDF
12N10W-00	Inmet	ATTENUATOR	Scan	PDF
12N10W-00F	Inmet	ATTENUATOR	Scan	PDF
12N10W-01	Inmet	ATTENUATOR	Scan	PDF
12N10W-01F	Inmet	ATTENUATOR	Scan	PDF
12N10W-02	Inmet	ATTENUATOR	Scan	PDF
12N10W-02F	Inmet	ATTENUATOR	Scan	PDF
12N10W-03	Inmet	ATTENUATOR	Scan	PDF
12N10W-03F	Inmet	ATTENUATOR	Scan	PDF

12N10W-04	Inmet	ATTENUATOR	Scan	PDF
12N10W-04F	Inmet	ATTENUATOR	Scan	PDF
12N10W-04M	Inmet	ATTENUATOR	Scan	PDF
12N10W-06	Inmet	ATTENUATOR	Scan	PDF
12N10W-06F	Inmet	ATTENUATOR	Scan	PDF
12N10W-06M	Inmet	ATTENUATOR	Scan	PDF

12N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
12N100A Abstract: 12n100 IXGH12N100 IXGH12N100A Text: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C	Original	PDF	12N100 12N100A O-247AD Mounti00 IXGH12N100/A IXGH12N100U/AU1 12N100A 12n100 IXGH12N100 IXGH12N100A
10N100 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt	Original	PDF	12N100Q ISOPLUS247TM 10N100Q 12N100 10N104 IXFR10N100 IXFR12N100 10N100
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged	Original	PDF	12N10 12N10 12N10L-TA3-T 12N10G-TA3-T 12N10L-TM3-T 12N10G-TM3-T 12N10L-TN3-T 12N10G-TN3-T 12N10L-TN3-R 12N10G-TN3-R
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	Original	PDF	ISOPLUS247TM 12N100Q 10N100Q 12N100S IXFR10N100 IXFR12N100 IXFH12N100Q 728B1
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1
1000 volt mosfet Abstract: SHD225613 SHD2258 Text: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 1.05 Ohm, 12A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to 12N100 Series	Original	PDF	SHD225613 SHD2258 12N100 1000 volt mosfet SHD225613 SHD2258
12n100q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q VDSS ID25 RDS on = 1000 V = 12 A = 1.05 W trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C	Original	PDF	12N100Q 12N100Q O-247 O-268 100ms
IXFH12N100Q Abstract: 10N100 6a diode 12N100Q IXFR12N100 Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	Original	PDF	ISOPLUS247TM 12N100Q 10N100Q 12N100 10N100 10N1IS IXFR10N100 IXFH12N100Q 10N100 6a diode IXFR12N100
12N10 Abstract: Mosfet 12N10L 12N10L Text: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell	Original	PDF	12N10 12N10 O-220 12N10L-TA3-T 12N10G-TA3-T 12N10L-TM3-T 12N10G-TM3-T O-251 12N10L-TN3-R 12N10G-TN3-R Mosfet 12N10L 12N10L
13N100 Abstract: 10N100 13n10 Text: HiPerFETTM Power MOSFETs VDSS IXFH / IXFM 10N100 IXFH / IXFM 12N100 IXFH 13N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM	Original	PDF	10N100 12N100 13N100 13N100 10N100 13n10
shd2258 Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 1.05 Ohm, 12A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to 12N100 Series	Original	PDF	SHD2258 SHD225613 12N100 SHD225613 O-254 O-254 shd2258
12N100Q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q VDSS ID25 RDS on = 1000 V = 12 A = 1.05 W trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-247 O-268 12N100Q 12N100Q O-268 100ms
12N100L Abstract: IXTH12N100L Text: Power MOSFETs for Linear Operation IXTH 12N100L VDSS = 1000 V = 12 A ID25 RDS on = 1.3 Ω N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	12N100L O-247 O-247 728B1 123B1 065B1 12N100L IXTH12N100L
IXGH12N100AU1 Abstract: IXGH12N100U1 Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1 IXGH12N100AU1 IXGH12N100U1

10N100F Abstract: 10n100 98934 Text: VDSS HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM ID25 RDS on 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) 1.05 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt	Original	PDF	ISOPLUS247TM 12N100F 10N100F IXFR10N100 IXFR12N100 728B1 10n100 98934
Untitled Abstract: No abstract text available Text: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V	Original	PDF	10N100 12N100 O-247 O-204
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt	OCR Scan	PDF	ISOPLUS247â 12N100Q 10N100Q 12N100 10N100 IXFR10N100
7N60B Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28	OCR Scan	PDF	30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh
D1488 Abstract: D2523 12n100q mss1000 ld12a Text: EIIXYS HiPerFET Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt V DSS ^D25 R DS on = 1000 V = 12 A = 1.05 Q trr < 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C	OCR Scan	PDF	12N100Q O-247AD 00A/ns O-247 D1488 D2523 mss1000 ld12a
12N100 Abstract: No abstract text available Text: IGBT with Diode Low VCE sat High speed IXGA/12N100U1 IXGA / IX G P 12N100AU1 Symbol Test Conditions V CES T j = 25°C to 150°C 1000 V v CGR T J, = 25°C to 150°C; Rrc = 1 MQ Gfc 1000 V v GES Continuous ±20 V VGEM Transient ±30 V Tc = 25°C 24 A Tc = 90°C	OCR Scan	PDF	IXGA/IXGP12N100U1 12N100AU1 O-220 O-263 12N100
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	PDF	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a
Untitled Abstract: No abstract text available Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C	OCR Scan	PDF	12N100U1 12N100AU1 O-247 IXGH12N100U1 IXGH12N100AU1
IXYS DS 145 12A Abstract: IXYS DS 145 LTS 543 Text: nixYs HiPerFET Power MOSFETs Q Class IXFH 12N100Q IX F T 12N100Q DSS D25 P DS on = 1000 V 12 A = 1.05 Q trr < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings	OCR Scan	PDF	O-247 12N100Q 12N100Q to150 IXYS DS 145 12A IXYS DS 145 LTS 543
Untitled Abstract: No abstract text available Text: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol	OCR Scan	PDF	10N100 12N100

12N10 Search Results

12N10 Result Highlights (1)

12N10 Price and Stock

Susumu Co Ltd RG2012N-104-W-T1

Susumu Co Ltd RG2012N-102-B-T5

Littelfuse Inc IXFH12N100P

Amphenol Sine Systems FLS012N10P03

Amphenol Sine Systems FLS012N10PHEC03

12N10 Datasheets (40)

12N10 Datasheets Context Search

12N100A

10N100

Untitled

Untitled

Untitled

1000 volt mosfet

12n100q

IXFH12N100Q

12N10

13N100

shd2258

12N100Q

12N100L

IXGH12N100AU1

10N100F

Untitled

Untitled

7N60B

D1488

12N100

ixgh 1500

Untitled

IXYS DS 145 12A

Untitled