200n60
Abstract: robot control
Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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200N60B
160ns
227TM
728B1
200n60
robot control
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200N60A
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGN 200N60A VCES IC25 VCE sat tfi = = = = 600 V 200 A 2.5 V 200 ns Preliminary data E Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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200N60A
200N60A
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT VCES IXGN 200N60 IXGN 200N60A 600 V 600 V IC25 VCE sat 200 A 2.5 V 200 A 2.7 V E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient
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200N60
200N60A
OT-227B,
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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200N60B
160ns
227TM
IXGN200N60B
405B2
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Untitled
Abstract: No abstract text available
Text: IXGN 200N60A2 IGBT Optimized for Switching up to 5 kHz VCES IC25 VCE sat = 600 V = 200 A = 1.35 V Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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200N60A2
OT-227B,
IC110
728B1
123B1
728B1
065B1
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200n60
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat = 600 V = 175 A = 2.1 V E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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200N60B
227TM
25crease
728B1
200n60
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient
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200N60B
OT-227B,
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200n60
Abstract: IXGN200N60B robot control RG200
Text: HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V Preliminary Data E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V Transient ±30 V IC25 TC = 25°C
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200N60B
OT-227B,
728B1
200n60
IXGN200N60B
robot control
RG200
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200N60B
Abstract: 200n60 IXGN200N60B SOT227B package SOT227B 123B16
Text: HiPerFASTTM IGBT IXGE 200N60B E Symbol Test Conditions VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns ISOPLUS 227TM (IXGE) Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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200N60B
160ns
227TM
IXGN200N60B
405B2
200N60B
200n60
SOT227B package
SOT227B
123B16
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200N60B
Abstract: 200n60
Text: HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V Transient ±30 V IC25 TC = 25°C 200 A IL Terminal Current Limit
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200N60B
OT-227B,
200N60B
200n60
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200N60
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES IC25 VCE sat 600 V 600 V 200 A 200 A 2.5 V 2.7 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30
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200N60
200N60A
OT-227B,
T100A
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200n60
Abstract: UPS SIEMENS 200N60A2 123B16
Text: IXGN 200N60A2 IGBT Optimized for Switching up to 5 kHz Preliminary Data Sheet Symbol = 600 V = 200 A = 1.35 V E Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V Transient ±30
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200N60A2
OT-227B,
IC110
728B1
123B1
728B1
065B1
200n60
UPS SIEMENS
200N60A2
123B16
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200n60
Abstract: ixgn200N60 200N60A IXGN200N60A
Text: HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES IC25 VCE sat 600 V 600 V 200 A 200 A 2.5 V 2.7 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30
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200N60
200N60A
OT-227B,
200n60
ixgn200N60
200N60A
IXGN200N60A
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200n60
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V Transient ±30
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200N60B
OT-227B,
200n60
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|
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200n60
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V Transient ±30
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200N60B
OT-227B,
200n60
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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200n60
Abstract: 200N60A
Text: VCES HiPerFAST IGBT ^C25 IXGN 200N60 600V 200A IXGN 200N60A 600V 200A V * CE sat tf. 2.5 V 350ns 2.7 V 200ns G é i V minIBLOC, SOT-227 B T e s t C o n d itio n s V CES T j = 25°C to150°C v CGR ^ v GES v’' gem Continuous ±20 V Transient ±30 V Tc = 25°C
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200N60
200N60A
350ns
200ns
to150
OT-227
E153432
IXGN200N6Q
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200n60
Abstract: u265 IXGM200N60 200N60A
Text: v* CES HiPerFAST IGBT IC25 j vw C E sat t IXGN 200N60 600V 200A f 2.5 V 1350 ns IXGN 200N60A 600V 200A i 2.7 V 200 ns Symbol Maximum Ratings Test C onditions miniBLOC, SOT-227 B TO V CES T j =2 5°C to 150°C 600 V V CGR T,J = 25cC to 15 0°C; Rtab „ = 1 MQ
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200N60
200N60A
OT-227
E153432
u265
IXGM200N60
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ci 555
Abstract: ci555 C.I.555
Text: Advanced Technical Information HiPerFAST IGBT IXGN 200N60B CES ^C25 VCE sat Test Conditions Symbol Maximum Ratings SOT-227B, miniBLOC V CES Tj = 25° C to 150° C 600 V Vw CGR Tj = 25° C to 150eC; RGE = 1 MQ 600 V V GES Continuous ±20 V v GEM Transient
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200N60B
OT-227B,
150eC;
ci 555
ci555
C.I.555
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7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28
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30N30
28N30
4QN30
31N60
38N60
41N60
60N60
200N60
25N100A
7N60B
65A3
40N60A
IXGA 12N60C
200n60
ixgh 1500
IXG IGBT
ixgh
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40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
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5-10A
52-14N01
52-16N01
55-12N
55-14N07
55-18N
60-08N
60-16N
62-08N
62-12N
40n80
13NB0
60N60
dsei 20-12
33N120
VUO 35-12 N 0 7
DS117-12A
DS117-12
26n60
4410PI
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SMD diode b24
Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64
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12N100
O-220
O-263
O-247
O-247
T0-204
30N30/.
40N30/.
31N60
SMD diode b24
diode b26
smd DIODE B28
20N60BU1
smd diode b23
60n60 igbt smd
B292
12n60c
SMD diode B2
b26 diode
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ixgh 1500
Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•
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10N60
20N60
31N60
30N60
38N60
40N60
60N60
32N60BS
40N60A
ixgh 1500
25N120
200n60
60n60 igbt smd
10N60A
30N60A
.25N100
20n60a
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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