CMM6003-SC
Abstract: CMM6003-SC-0G00 CMM6003-SC-0G0T PB-CMM6003-SC-0000 16550 smt
Text: 50-870 MHz High Dynamic Range Amplifier CMM6003-SC -BD March 2007 - Rev 13-Mar-07 Features Functional Block Diagram 50 to 870 MHz Frequency Range +41 dBm Output IP3 1.6 dB Noise Figure (@ 450 MHz) 17 dB Gain 22 dBm P1dB SOT-89 SMT Package Single Power Supply
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CMM6003-SC
13-Mar-07
OT-89
CMM6003-SC
CMM6003-SC-0G00
CMM6003-SC-0G0T
PB-CMM6003-SC-0000
16550 smt
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Untitled
Abstract: No abstract text available
Text: TCUT1200 Vishay Semiconductors Subminiature Dual-Channel Transmissive Optical Sensor with Phototransistor Outputs, RoHS Compliant, Released for Lead Pb -free Solder Process Description The TCUT1200 is a compact transmissive sensor that includes an infrared emitter and two phototransistor
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TCUT1200
TCUT1200
18-Jul-08
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revere load cell
Abstract: ph-33 499125-00
Text: Model ASC/DSC Self Aligning Set Vishay Revere ASC/DSC Self Aligning Accessories FEATURES • Capacities: 30 - 50t • Hardened components at all bearing surfaces • Self-aligning construction • Stainless steel DESCRIPTION APPLICATIONS The ASC and DSC Self Aligning Set, provides
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08-Apr-05
revere load cell
ph-33
499125-00
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410561
Abstract: 3919 74993 AN609 Si3973DV
Text: Si3973DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3973DV
AN609
13-Mar-07
410561
3919
74993
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AN609
Abstract: si1988
Text: Si1988DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1988DH
AN609
13-Mar-07
si1988
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AN609
Abstract: Si3900DV
Text: Si3900DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3900DV
AN609
13-Mar-07
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Untitled
Abstract: No abstract text available
Text: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise @ 10KHz offset:
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10KHz
100KHz
CVCO55CC-2778-2945
13-Mar-07
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ee13 bobbin
Abstract: HICAL 548 vishay 1N4007 DO-214AC HICAL LNK363 USB charger opto Star Sea Electronics ss14 diode TAQ2G4R7MK0811 ECK-D3A122KBN LNK363DN
Text: Design Example Report Title 2.75 W Single Output, Isolated Charger Using LNK363DN Specification 90 VAC – 264 VAC Input 5 V, 0.55 A, CVCC Output Application Cell Phone Charger Author Power Integrations Application Department Document Number DER-135 Date September 5, 2007
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LNK363DN
DER-135
200mW
CISPR22B
ee13 bobbin
HICAL 548
vishay 1N4007 DO-214AC
HICAL
LNK363
USB charger opto
Star Sea Electronics ss14 diode
TAQ2G4R7MK0811
ECK-D3A122KBN
LNK363DN
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AN609
Abstract: Si2303BDS
Text: Si2303BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si2303BDS
AN609
13-Mar-07
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Untitled
Abstract: No abstract text available
Text: VJ C0G NP0 Dielectric Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors for Commercial Applications FEATURES • C0G is an ultra-stable dielectric offering a Temperature Coefficient of Capacitance (TCC) of 0 ± 30 ppm/°C RoHS • Low Dissipation Factor (DF)
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13-Mar-07
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C2204
Abstract: 74HCT14 TCPT1200 Transmissive Optical Sensor
Text: TCPT1200 Vishay Semiconductors Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead Pb -free Solder Process Description The TCPT1200 is a compact transmissive sensor that includes an infrared emitter and phototransistor
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TCPT1200
TCPT1200
2002/95/EC
2002/9ed
08-Apr-05
C2204
74HCT14
Transmissive Optical Sensor
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10DEC07
Abstract: 614004135023
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: WHITE CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS Ni PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C
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UL94-V0
10-DEC-07
13-MAR-07
03-NOV-06
10DEC07
614004135023
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Untitled
Abstract: No abstract text available
Text: TCPT1200 Vishay Semiconductors Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead Pb -free Solder Process Description The TCPT1200 is a compact transmissive sensor that includes an infrared emitter and phototransistor
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TCPT1200
TCPT1200
2002/95/EC
2002/96/EC
18-Jul-08
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TN0029
Abstract: PB40
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Capacitors Tech Note TN0029 Vishay Vitramon MLCC End Termination Sn: 100% Tin Plate Matte Finish W,X,Y Or Sn/Pb Tin/Lead Plate Matte Finish with a minimum of 4 % Lead (L,Z) Pd/Ag: Palladium/Silver FIGURE 1. Termination Code: F, M
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TN0029
Sn60/Pb40
13-Mar-07
TN0029
PB40
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6062G
Abstract: LCD T 6062G
Text: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer
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ARM926EJ-STM
16-bits
6062G
13-Mar-07
LCD T 6062G
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c 2437 power mosfet
Abstract: AN609 Si3475DV
Text: Si3475DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3475DV
AN609
13-Mar-07
c 2437 power mosfet
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Digital Weighing Scale schematic
Abstract: tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411
Text: VISHAY INTERTECHN O L O G Y , INC . INTERACTIVE data book load cells and indicators vishay transDucers vse-db0086-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0086-0802
Digital Weighing Scale schematic
tedea 1042
Tedea-Huntleigh model 1022
schematic diagram to convert 230VAC to 5VDC POWER
tedea huntleigh load cell 3410
tedea load cell 1004
Weighing scale sensor gozinta
Tedea-Huntleigh 9010
manual weight indicator vt200
tedea huntleigh load cell 3411
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7930
Abstract: AN609 Si3867DV
Text: Si3867DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3867DV
AN609
13-Mar-07
7930
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mosfet 4456
Abstract: 417 mosfet 109-28-4 AN609 Si3481DV 112502 33-8666
Text: Si3481DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3481DV
AN609
13-Mar-07
mosfet 4456
417 mosfet
109-28-4
112502
33-8666
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BY140
Abstract: 14522 weri
Text: 1 2 3 4 5 MATERIAL: HOUSING MATERIAL: LCP COLOR: IVORY ACTUATOR MATERIAL: LCP COLOR: BLACK CONTACT MATERIAL: PHOSPOR BRONZE CONTACT PLATING: 100µ TIN OVER 50µ NI QUALITY CLASS: 25 MATING CYCLES A ENVIRONNEMENTAL: OPERATING TEMPERATURE: -25°C UP TO 85°C
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UL94-V0
100MOHM
250VAC/MN
20mOHM
E323964
30-JUL-08
26-NOV-07
19-OCT-07
13-MAR-07
02-OCT-06
BY140
14522
weri
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AN609
Abstract: Si3905DV
Text: Si3905DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3905DV
AN609
13-Mar-07
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9435MSC
Abstract: 9435M
Text: WTK9435M DRAIN SOURCE VOLTAGE 6 5 D 4 G -5.3 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT 8 S 1 P b Lead Pb -Free D Surface Mount P-Channel Enhancement Mode MOSFET -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V
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WTK9435M
WTK9435M
13-Mar-07
9435MSC
9435M
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - ,- ALL RIGHTS RESERVED. LOC DIST AF 50 R E VIS IO N S P LTR B1 DESCRIPTION DATE REVISED PER E C R - 0 7 - 0 0 4 6 1 2 DWN APVD HMR GJ 13MAR07 SPECIFICATIONS: MAGNET WIRE #18 - #34 AWG,
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13MAR07
1JAN2002
11JAN2002
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 3 THIS DRAWING IS U N P U B LIS H E D . COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION A L L RIGHTS 2 - LOC DIS T R E V IS IO N S AA 00 RESERVED . LTR DES C RIPTIO N C REV PER ECO—0 7 —0 0 4 6 1 7 DATE DWN APVD 13MAR07 TK JW MATERIAL: HOUSING HIGH TEMPERATURE NYLON,
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13MAR07
81/xm
03//m[
AR2000
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