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    Abstract: No abstract text available
    Text: WT9435M DRAIN SOURCE VOLTAGE 6 5 D 4 G -5.3 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT 8 S 1 P b Lead Pb -Free D Surface Mount P-Channel Enhancement Mode MOSFET -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V


    Original     		WT9435M WT9435M 18-Jan-07 PDF

    9435MSC

    Abstract: 9435M
    Text: WTK9435M DRAIN SOURCE VOLTAGE 6 5 D 4 G -5.3 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT 8 S 1 P b Lead Pb -Free D Surface Mount P-Channel Enhancement Mode MOSFET -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V


    Original     		WTK9435M WTK9435M 13-Mar-07 9435MSC 9435M PDF