Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION
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TIM1314-9L
75GHz
-25dBc
33dBm
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Untitled
Abstract: No abstract text available
Text: Advance Product Information March 14, 2003 Ku Band 2W Packaged Amplifier TGA8658-EPU-SG TGA8658-EPU-SD Key Features • • • • • • • • • Frequency Range: 13-17 GHz Optimized for VSAT band 13.75-14.5GHz 33 dB Nominal Gain Typical > 33.5 dBm Psat in VSAT band @ 7V
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TGA8658-EPU-SG
TGA8658-EPU-SD
TGA8658-EPU-SD
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Untitled
Abstract: No abstract text available
Text: RFMA1214-0.5W-Q7 12.5– 14.5GHz High Gain Surface-Mounted PA UPDATED: 04-24-2008 FEATURES • • • • • 12.5 – 14.5GHz Operating Frequency Range 26.5dBm Output Power @1dB Compression 29.0dB Typical Power Gain @1dB Compression -41dBc OIMD3 @Pout 16.5dBm/tone
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RFMA1214-0
-41dBc
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EIA1414-2P
Abstract: EIB1414-2P
Text: Excelics EIA/EIB1414-2P PRELIMINARY DATA SHEET 14.0-14.5GHz, 2W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)
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EIA/EIB1414-2P
46dBm
EIA1414-2P
180mA
32dBm
175oC
150oC
45dBc
23dBm/Tone
-65/150oC
EIA1414-2P
EIB1414-2P
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EIA1314-2P
Abstract: EIB1314-2P
Text: Excelics EIA/EIB1314-2P PRELIMINARY DATA SHEET 13.75-14.5GHz, 2W Internally Matched Power FET • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)
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EIA/EIB1314-2P
46dBm
EIA1314-2P
180mA
32dBm
175oC
150oC
45dBc
23dBm/Tone
-65/150oC
EIA1314-2P
EIB1314-2P
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Untitled
Abstract: No abstract text available
Text: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
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FLM1314-12F
FLM1314-12F
FCSI0500M200
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION
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TIM1414-18L
-25dBc
36dBm
25GHz
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Untitled
Abstract: No abstract text available
Text: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
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FLM1314-6F
FLM1314-6F
-65hods
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Untitled
Abstract: No abstract text available
Text: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM1414-8F
-46dBc
FLM1414-8F
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Untitled
Abstract: No abstract text available
Text: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM1314-12F
-45dBc
FLM1314-12F
25hods
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FMM5048GJ
Abstract: 28940 mmic case styles
Text: FMM5048GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION
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FMM5048GJ
FMM5048GJ
FCSI0500M200
28940
mmic case styles
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14.5ghz
Abstract: FLM1414-3F
Text: FLM1414-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 35dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM1414-3F
35dBm
-46dBc
FLM1414-3F
14.5ghz
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FMM5522GJ
Abstract: EUDYNA ku vsat amplifier 14.5ghz Eudyna Devices power amplifiers mmic case styles
Text: FMM5522GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION
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FMM5522GJ
FMM5522GJ
VDD14888
EUDYNA
ku vsat amplifier
14.5ghz
Eudyna Devices power amplifiers
mmic case styles
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FLM1314-6F
Abstract: tel 1145 319
Text: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
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FLM1314-6F
FLM1314-6F
Di4888
tel 1145 319
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S465A
Abstract: FLM1314-18F ED-4701
Text: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM1314-18F
FLM1314-18F
25ong,
S465A
ED-4701
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Untitled
Abstract: No abstract text available
Text: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids
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TIM1414-15-252
145mA
2-11C1B)
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MGF7201A
Abstract: No abstract text available
Text: ^MITSUBISHI ELECTRONIC DEVICE GROUP MGF7201A DESCRIPTION MGF7201A is a monolithic microwave integrated circuit for use in 14.0 ~ 14.5GHz band amplifiers. APPLICATIONS FEATURES • • High output power P1dB = 30mW TYP. • 14 GHz-band amplifiers QUALITY GRADE
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MGF7201A
MGF7201A
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MGFK33V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 3 3 V 40 45 1 4 .0 — 14.5GHz BAND 2W INTERNALLY M ATCH ED GaAs F E T D E S C R IP T IO N The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 1 4 .0 ~ 14.5
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MGFK33V4045
MGFK33V4045
77add
700mA
700mA)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL O u tp u t Power at ldB Compression Point PlcLB Power Gain at ldB Compression Point G ldB D rain C urrent I ds i>dd Power Added Efficiency CONDITION f =13.75-14.5GHz 37.0
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TIM1414-7-252
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Untitled
Abstract: No abstract text available
Text: FLM1314-6F -FEATURES • • • • • • X, Ku-Band Internally Matched FET High Output Power: P ^ b = 37.5dBm Typ. High Gain: = 5.5dB (Typ.) High PAE: r!add = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz
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FLM1314-6F
FLM1314-6F
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLM1414-6F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 6.0dB (Typ.) • High PAE: r iadd = 26% (Typ.) • Low IM3 = -46dBc@Po = 26.5dBm (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q
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FLM1414-6F
-46dBc
25llowing
FCSI0598M200
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MGFK44A4045
Abstract: No abstract text available
Text: PRELIMINARY MITSUBISHI s e m ic o n d u c t o r <GaAs fet> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING T he M G F K 4 4 A 4 0 4 5 is an internally impedance matched G aAs power F E T especially Unit : millimeters
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MGFK44A4045
MGFK44A4045
gf-38
25ohm
FK44A4045
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Untitled
Abstract: No abstract text available
Text: FMM5522GJ VSATMMIC FEATURES • • • • • • High Output Power: P-|<jB = 35.0dBm Typ. High Gain: G-ih r = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION
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FMM5522GJ
FMM5522GJ
FCSI0599M200
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FLM1414-4C
Abstract: No abstract text available
Text: p. FLM1414-4C Internally Matched Power GaAs FETs . J FEATURES • High Output Power: P-idg = 35.5dBm Typ. • High Gain: G-j^B = 5.0dB (Typ.) • High PAE: r iadd = 21% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed
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FLM1414-4C
FLM1414-4C
1100mA
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