Untitled
Abstract: No abstract text available
Text: SPECIFICATION OF DIELECTRIC TOKO P/N: FILTER TDFM2A-1575A-11 1. OUTLINE DIMENSION L : 5.2 B : 2.0 ¡ ¢ GND IN OUT GND tolerance : ±0.3 unit : mm Marking : 1575 11 2. ELECTRICAL CHARACTERISTICS SPECIFICATION CENTER FREQUENCY Fo PASSBAND WIDTH : :
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TDFM2A-1575A-11
40MHz
00MHz
37225B
CCL-H870
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION OF DIELECTRIC TOKO P/N: FILTER TDFM2A-1575A-11 1. OUTLINE DIMENSION L : 5.2 B : 2.0 ¡ ¢ GND IN OUT GND tolerance : ±0.3 unit : mm Marking : 1575 11 2. ELECTRICAL CHARACTERISTICS SPECIFICATION CENTER FREQUENCY Fo PASSBAND WIDTH : :
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TDFM2A-1575A-11
40MHzPECIFICATION
40MHz
00MHz
37225B
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toko Marking
Abstract: No abstract text available
Text: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-1575B-11 DIMENSION A=5.4 B=2.5 T=2.25 3 Marking:1575-11 TOKO Unit :mm Tolerance:±0.3 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo Passband Width Input Output Impedance : 1575.4 MHz : Fo±5.0MHz
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TDF2A-1575B-11
50ohm
Fo-50MHz
40MHz
00MHz
7217A
toko Marking
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15-75-11 toko
Abstract: TDF2A-1575B-11 1575-11 toko
Text: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-1575B-11 DIMENSION A=5.4 B=2.5 T=2.25 3 Marking:1575-11 TOKO Unit :mm Tolerance:±0.3 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo Passband Width Input Output Impedance : 1575.4 MHz : Fo±5.0MHz
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TDF2A-1575B-11
50ohm
Fo-50MHz
SANO-23
40MHz
00MHz
7217A
15-75-11 toko
TDF2A-1575B-11
1575-11 toko
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1575-11 toko
Abstract: No abstract text available
Text: RoHS compliant Specification of Dielectric Filter Preliminary Toko P/No. : TDF2A-1575B-11A 1.Outline Dimension A=5.4 B=2.5 T=2.25 Marking:1575-11 TOKO Tolerance:±0.3 Unit :mm 2.Electrical Characteristics Center Frequency(Fo) Passband Width Passband Insertion Loss
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TDF2A-1575B-11A
1575-11 toko
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TDFM2A-1575A-11A
Abstract: No abstract text available
Text: RoHS compliant Specification of Dielectric Filter Preliminary Toko P/No. : TDFM2A-1575A-11A 1.Outline Dimension 0.8 1.0 2.25max. ① ② 1575 11 1 ④ 2.0 0.8 5.2±0.5 4.5 3.7 3.5 ③ ② ④ ① ③ 2.Electrical Characteristics Center Frequency(Fo) Passband Width
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TDFM2A-1575A-11A
25max.
TDFM2A-1575A-11A
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LTE Receiver
Abstract: AN253 maxim microwave transmitter 10GHz 07104
Text: B GA 915 N 7 Highl y Lin ear and L ow Nois e A mplif er for Gl obal Na vi gati o n S atelli te S ys te m s G PS/ G L O NA S S/ Gal ileo/ C O M PA S S fr o m 1550 MHz to 1 615 M Hz Appli c ations Applic atio n N ote A N 251 Revision: Rev. 1.3 2011-09-13 RF and P r otecti on D evic es
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4003C,
AN251,
BGA915N7
AN251
LTE Receiver
AN253 maxim
microwave transmitter 10GHz
07104
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Bluetooth Jammer
Abstract: BAND13 LTE Receiver BGA231L7 gps transmitter block diagram 827mhz murata LTE saw filter
Text: B GA 23 1L 7 Impro vi ng I mmuni t y of B GA 23 1L7 agains t O ut - Of -B an d J a m me r s LT E Ban d -1 3, G S M85 0/9 00/18 00, U MT S, WLA N Applic atio n N ote A N 273 Revision: Rev. 1.0 2011-09-08 RF and P r otecti on D evic es Edition 2011-09-16 Published by
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H1605
BGA231L7
AN273,
AN273
Bluetooth Jammer
BAND13
LTE Receiver
BGA231L7
gps transmitter block diagram
827mhz
murata LTE saw filter
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MCR03*J102
Abstract: CL10B104KONC MCR03*J102 resistor sige an-061 LL1608-FS39NJ SGA-8343 MCH185A2R2C AN-044
Text: Design Application Note - AN-061 SGA-8343 GPS Application Circuits Abstract Sirenza Microdevices’ SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575 MHz). The first application circuit
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AN-061
SGA-8343
EAN-103201
MCR03*J102
CL10B104KONC
MCR03*J102 resistor
sige an-061
LL1608-FS39NJ
MCH185A2R2C
AN-044
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Untitled
Abstract: No abstract text available
Text: B GA 231L 7 Impro vi ng I mmuni t y of B GA 23 1L7 agains t O ut - Of -B an d J a m me r s LT E Ban d -1 3, G S M85 0/9 00/18 00, U MT S, WLA N Us ing Seri es No tc hes Applic atio n N ote A N 276 Revision: Rev. 1.0 2011-09-08 RF and P r otecti on D evic es
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BGA231L7
AN276,
AN276
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k 513
Abstract: MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis bfp640f BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179
Text: BF P640 F AN179 High Gain , Hi gh IP3 GPS L NA using BF P640 F Si Ge: C Transisto r Applic atio n Note Revision: Rev 1.2, 2010.02.16 RF and Protecti on Devi c es Edition 2010.02.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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AN179
BFP620
BFP640F
AN182
k 513
MOBILE PHONE AMPLIFIER
michael hiebel fundamentals of vector analysis
BFP620 applications note
gps trimble
transistor bf 179
Miteq
MTA-100
AN179
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MCR03J102
Abstract: MCR03*J102 MCH185A150J MCR03*J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z
Text: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were
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SGA-8343
AN-061
1575MHz)
MCR03J102
MCR03*J102
MCH185A150J
MCR03*J102 resistor
CL10B104KONC
sga8343
samsung bluetooth
sige an-061
sga8343z
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qfn-12
Abstract: cdm 12.1 laser MC13820 QFN12 IP3 BOOST
Text: Freescale Semiconductor, Inc. Technical Data MC13820/D Rev. 0, 06/2004 MC13820 Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 QFN-12 Ordering Information Device Marking Package MC13820
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MC13820/D
MC13820
QFN-12)
QFN-12
MC13820
qfn-12
cdm 12.1 laser
QFN12
IP3 BOOST
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GLONASS chip
Abstract: BGM1043 GLOBAL NAVIGATION 3000 BGM1043N7 l1 l2 gps antenna schematic AN287 lte tranceiver 1800MHz
Text: B G M10 43 N7 Fron t - End Modul e f or Glo bal Na vig atio n Sat ellite S yste ms G NS S A p plic atio ns with hig he r LT E Ban d -13 rej ec tion Applic atio n N ote A N 287 Revision: Rev. 1.0 2012-06-19 RF and P r otecti on D evic es Edition 2012-06-27
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M110416
BGM1043N7
AN287,
AN287
GLONASS chip
BGM1043
GLOBAL NAVIGATION 3000
BGM1043N7
l1 l2 gps antenna schematic
AN287
lte tranceiver 1800MHz
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BGM1043N7
Abstract: BGM1043 GLOBAL NAVIGATION 3000 bluetooth based positioning system block diagram M120319 omnivision EVALUATION BOARD gps m 89 pin configuration lte tranceiver 1800MHz
Text: B G M10 43 N7 Low -N ois e Fr ont -E nd Mo dule for G loba l Na vig atio n S atelli te S ys te m s G N SS Applic atio n Usi ng 0 201 Co m p onents Applic atio n N ote A N 286 Revision: Rev. 1.0 2012-06-27 RF and P r otecti on D evic es Edition 2012-06-27
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BGM1043N7
M120319
AN286,
BGM1043N7
AN286
BGM1043
GLOBAL NAVIGATION 3000
bluetooth based positioning system block diagram
omnivision EVALUATION BOARD
gps m 89 pin configuration
lte tranceiver 1800MHz
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GLOBAL NAVIGATION 3000
Abstract: BGM1043 BGM1043N7 BGM1032N7 AN-294 schematic diagram receiver data circuit satellite
Text: B G M10 43 N7 Fron t - End Modul e f or Glo bal Na vig atio n Sat ellite S yste ms G NS S A p plic atio ns with hig he r LT E Ban d -13 rej ec tion us ing 0402 c o mpone nts Applic atio n N ote A N 294 Revision: Rev. 1.0 2012-07-23 RF and P r otecti on D evic es
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BGM1032N7
M110416
BGM1043N7
AN294,
AN294
GLOBAL NAVIGATION 3000
BGM1043
BGM1043N7
AN-294
schematic diagram receiver data circuit satellite
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BGM1044N7
Abstract: GLOBAL NAVIGATION 3000 GPS GLONASS Antenna antenna mm size GLONASS chip
Text: B G M10 44 N7 Low -N ois e Hi gh - G a in Fr ont -E nd Mo dule for Gl obal Na vi gati o n S atelli te S ys te m s G N SS A pplicati on Us in g Hi gh - Q Induc t ors Applic atio n N ote A N 282 Revision: Rev. 1.0 2012-04-04 RF and P r otecti on D evic es
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BGM104XN7
RO4003C
AN282,
BGM1044N7
AN282
BGM1044N7
GLOBAL NAVIGATION 3000
GPS GLONASS Antenna antenna mm size
GLONASS chip
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ATF-10736
Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
Text: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t
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ATF-10236
ATF-10736
AN-G005
ATF10236
ATF10136
ATF-10136
HP346A
MSA-0686
TK11650U
TL05
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ATF10236
Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686
Text: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t
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ATF-10236
frequen058
5963-3780E
5966-0166E
ATF10236
FET K 2611
TRANSISTOR BD 137-10
AGILENT 9988
microstripline
ATF-10136
transistor equivalent 2274 table chart
ATF-10736
HP346A
MSA-0686
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M513
Abstract: MAAL-008550 MAAL-008550-000000 MAAL-008550-001SMB MAAL-008550-TR3000
Text: MAAL-008550 Low Noise Amplifier 0.5 - 3.0 GHz M/A-COM Products Rev. V1 Functional Schematic Features • • • • • • • Low Noise Figure: 0.75 dB at 2.3 GHz Single +3 to +5 V Supply Voltage Low Current: 7.5 mA typical Lead-Free SC70-6LD 100% Matte Tin Plating over Copper
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MAAL-008550
SC70-6LD
MAAL-008550
M513
MAAL-008550-000000
MAAL-008550-001SMB
MAAL-008550-TR3000
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Untitled
Abstract: No abstract text available
Text: MAAL-008550 Low Noise Amplifier 0.5 - 3.0 GHz M/A-COM Products Rev. V2 Functional Schematic Features • • • • • • • Low Noise Figure: 0.75 dB at 2.3 GHz Single +3 to +5 V Supply Voltage Low Current: 7.5 mA typical Lead-Free SC70-6LD 100% Matte Tin Plating over Copper
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MAAL-008550
SC70-6LD
MAAL-008550
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mobile phone jammer schematic
Abstract: advantages of mobile signal jammer circuit mobile jammer circuit BGM781N11 BGM781 mobile phone jammer mobile signal jammer AN184 murata gps BGA715L7
Text: B G M 7 8 1N 1 1 AN184 Co mp act and Hig h Performan c e Fron t-End Modul e f or GPS Applic atio ns Applic atio n Note Revision: 1.0, 16/11/2009 RF and Protecti on Devi c es Edition 2009.11.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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AN184
BGM781N11
AN184,
mobile phone jammer schematic
advantages of mobile signal jammer circuit
mobile jammer circuit
BGM781N11
BGM781
mobile phone jammer
mobile signal jammer
AN184
murata gps
BGA715L7
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1575-24
Abstract: BPF640 bfp640f Texas Instruments 4100 GPS BFP640FESD gsm mobile jammer mobile jammer mobile signal jammer AN194 BPF640FESD
Text: BFP640FESD LNA BFP640FESD for GPS 1575MHz A pplication A pplication Note AN194 Revision: Rev. 1.0 2010-03-09 RF and Protection Devices Edition 2010-03-09 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
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BFP640FESD
BFP640FESD
1575MHz
AN194
proper2010-03-09
1575MHz
1575-24
BPF640
bfp640f
Texas Instruments 4100 GPS
gsm mobile jammer
mobile jammer
mobile signal jammer
AN194
BPF640FESD
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION OF DIELECTRIC FILTER TOKO P/No: 1. OUTLINE DIMENSION A= 5 .4 B=2 .5 T=2.25 TDF2A-1575B-11A Marking:1575-11 TOKO Unit :mm Tolerance:±0.3 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo 1575.4 MHz Passband Width Fo±5.0MHz Input Output Impedance
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OCR Scan
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TDF2A-1575B-11A
50ohm
Fo-50MHz
40MHz
40MHz
00MHz
37225B
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