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    15N80 Search Results

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    15N80 Price and Stock

    Vishay Siliconix SIHP15N80AEF-GE3

    EF SERIES POWER MOSFET WITH FAST
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    DigiKey SIHP15N80AEF-GE3 Tube 2,061 1
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    Vishay Siliconix SIHB15N80AE-GE3

    MOSFET N-CH 800V 13A D2PAK
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    DigiKey SIHB15N80AE-GE3 Tube 1,065 1
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    STMicroelectronics STB15N80K5

    MOSFET N CH 800V 14A D2PAK
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    DigiKey STB15N80K5 Cut Tape 1,054 1
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    STB15N80K5 Digi-Reel 1,054 1
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    Mouser Electronics STB15N80K5 783
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    Newark STB15N80K5 Cut Tape 1,551 1
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    STMicroelectronics STB15N80K5 783 1
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    Avnet Silica STB15N80K5 15 Weeks 1,000
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    EBV Elektronik STB15N80K5 15 Weeks 1,000
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    Win Source Electronics STB15N80K5 56,000
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    STMicroelectronics STFU15N80K5

    MOSFET N-CH 800V 14A TO220FP
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    DigiKey STFU15N80K5 Tube 1,000 1
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    Avnet Americas STFU15N80K5 Tube 14 Weeks 1,000
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    Mouser Electronics STFU15N80K5 765
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    STMicroelectronics STFU15N80K5 765 1
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    Avnet Silica STFU15N80K5 15 Weeks 50
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    Chip1Stop STFU15N80K5 Tube 1,000
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    EBV Elektronik STFU15N80K5 15 Weeks 50
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    Vishay Siliconix SIHA15N80AE-GE3

    MOSFET N-CH 800V 6A TO220
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    DigiKey SIHA15N80AE-GE3 Tube 973 1
    • 1 $3.32
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    Find more 15N80 price and stock on Findchips.com

    15N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Z 728

    Abstract: 15N80Q IXFH15N80Q 15N80
    Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings


    Original     		PDF 15N80Q 220TM ISOPLUS220TM 728B1 123B1 728B1 065B1 Z 728 15N80Q IXFH15N80Q 15N80

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF 15N80Q O-247 O-268 125OC Figure10.

    15N80Q

    Abstract: IXFH15N80Q
    Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings


    Original     		PDF 15N80Q 220TM ISOPLUS220TM IXFH15N80Q 728B1 123B1 728B1 065B1 15N80Q

    15N80

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 14N80 IXFH 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 800 V 800 V 14 A 15 A 0.70 Ω 0.60 Ω trr < 250 ns Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 14N80 15N80 15N80 O-247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q VDSS ID25 RDS on Q-Class = 800 V = 15 A = 0.60 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 15N80Q 15N80Q O-268 O-247 Figure10.

    15N80Q

    Abstract: IXFH15N80Q
    Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings


    Original     		PDF 15N80Q 220TM ISOPLUS220TM 728B1 123B1 728B1 065B1 15N80Q IXFH15N80Q

    15N80Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS ISOPLUS247TM Q Class ID25 = 800 V = 13 A = 0.60 W Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Preliminary data


    Original     		PDF 15N80Q ISOPLUS247TM

    MOSFET 11N80

    Abstract: 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs
    Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 HiPerFET Power MOSFET TM IXFH/IXFM 11N80 IXFH/IXFM 13N80 IXFH/IXFM 14N80 IXFH/IXFM 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 11N80 13N80 14N80 15N80 MOSFET 11N80 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs

    15N80Q

    Abstract: 15N80 125OC IXFH14N80 IXFH15N80
    Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF 15N80Q O-247 O-268 125OC Figure10. 15N80Q 15N80 125OC IXFH14N80 IXFH15N80

    Untitled

    Abstract: No abstract text available
    Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS 220TM Symbol Test Conditions Maximum Ratings


    Original     		PDF 15N80Q 220TM IXFH15N80Q 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM Q Class IXFR 15N80Q VDSS = 800 V ID25 = 13 A RDS on = 0.60 W (Electrically Isolated Back Surface) trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


    Original     		PDF ISOPLUS247TM 15N80Q

    Untitled

    Abstract: No abstract text available
    Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface VDSS ID25 RDS on = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings


    Original     		PDF 15N80Q 220TM ISOPLUS220TM 728B1 123B1 728B1 065B1

    15N80Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF 15N80Q 15N80Q O-247 O-268 125OC Figure10.

    IXFH15N80

    Abstract: 15n80 14N80 DS965 IXFH14N80 125OC
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient


    Original     		PDF IXFH14N80 IXFH15N80 14N80 15N80 125OC 728B1 IXFH15N80 15n80 14N80 DS965 IXFH14N80 125OC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient


    Original     		PDF IXFH14N80 IXFH15N80 14N80 15N80 125OC 728B1

    STF15N80K5

    Abstract: 15N80K5 stf15N80k
    Text: 15N80K5, 15N80K5, 15N80K5, 15N80K5 N-channel 800 V, 0.3 Ω typ., 14 A SuperMESH 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — preliminary data Features TAB Type VDSS RDS on max ID 15N80K5 15N80K5 15N80K5


    Original     		PDF STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 O-220FP, O-220 O-247 STB15N80K5 STF15N80K5 STP15N80K5 15N80K5 stf15N80k

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    Untitled

    Abstract: No abstract text available
    Text: | H | J IXFH 15N80Q IXFT 15N80Q HiPerFET Power MOSFETs V DSS = 800 V 15 A = 0.60 Q ^D25 ” RD S o n Q-Class t rr < 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, LowQ P relim inary data sheet Symbol TestConditions V T j = 2 5 °C to 150°C


    OCR Scan     		PDF 15N80Q O-268

    Untitled

    Abstract: No abstract text available
    Text: DIXYS AdvancedTechnical Information P Electrically Isolated Back Surface = = — DS(on) ~ o o 00 HiPerFET Power MOSFETs IXFR 15N80Q V DSS ISOPLUS247™ Q Class ^D25 V 13 A 0.60 a trr <250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


    OCR Scan     		PDF 15N80Q ISOPLUS247TM 247TM

    Untitled

    Abstract: No abstract text available
    Text: EUXYS'^mlÊiÈÈSÈm. W SSÊœ p V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 14N80 IXFH 15N80 ^D25 800 V 14 A 800 V 15 A t„ < 250 ns DS on 0.70 £2 0.60 Q Preliminary data Symbol Test Conditions v


    OCR Scan     		PDF 14N80 15N80 O-247

    MOSFET 11N80

    Abstract: 11N80 MOSFET 14n80 ns800 13n80
    Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C


    OCR Scan     		PDF 11N80 13N80 14N80 15N80 MOSFET 11N80 MOSFET 14n80 ns800

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family IXFH 14N80 IXFH 15N80 p ^D 25 D S on 800 V 14 A 0.70 ß 800 V 15 A 0.60 Q trr < 250 ns P re lim in a ry data Symbol Test Conditions v vDGH T j = 25°C to 150°C


    OCR Scan     		PDF 14N80 15N80 O-247

    diode DSDI 9

    Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
    Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B


    OCR Scan     		PDF O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A

    Untitled

    Abstract: No abstract text available
    Text: □IXYS HiPerFET Power MOSFETs IXFH 14N80 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family V DSS ^D25 800 V 800 V 14 A 15 A R DS on 0.70 Q 0.60 Q trr < 250 ns Preliminary data Maximum Ratings Sym bol Test C onditions V Tj = 25°C to 150°C


    OCR Scan     		PDF 14N80 IXFH15N80 15N80 O-247