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Vishay Siliconix SIHP15N80AEF-GE3 EF SERIES POWER MOSFET WITH FAST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP15N80AEF-GE3	Tube	2,061		1	1 $2.65 10 $2.65 100 $2.65 1000 $1.04876 10000 $1.04876	Buy Now
Vishay Siliconix SIHB15N80AE-GE3 MOSFET N-CH 800V 13A D2PAK
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DigiKey	SIHB15N80AE-GE3	Tube	1,065		1	1 $3.43 10 $3.43 100 $3.43 1000 $1.17547 10000 $1.1	Buy Now
STMicroelectronics STB15N80K5 MOSFET N CH 800V 14A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STB15N80K5	Digi-Reel	1,054		1	1 $6.14 10 $4.119 100 $6.14 1000 $2.48382 10000 $2.48382	Buy Now
	STB15N80K5	Cut Tape	1,054		1	1 $6.14 10 $4.119 100 $6.14 1000 $2.48382 10000 $2.48382	Buy Now
	STB15N80K5	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.41212 10000 $2.41212	Buy Now
Avnet Americas	STB15N80K5	Reel		14 Weeks	1,000	1 - 10 - 100 - 1000 $2.41213 10000 $2.27024	Buy Now
Mouser Electronics	STB15N80K5		783			1 $5.16 10 $3.66 100 $2.73 1000 $2.41 10000 $2.41	Buy Now
Newark	STB15N80K5	Cut Tape	1,551		1	1 $5.68 10 $4.86 100 $4.03 1000 $3.64 10000 $3.64	Buy Now
	STB15N80K5	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics	STB15N80K5		783		1	1 $5.06 10 $3.59 100 $2.68 1000 $2.37 10000 $2.37	Buy Now

Avnet Silica	STB15N80K5			15 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STB15N80K5			15 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	STB15N80K5		56,000			1 - 10 - 100 $2.1676 1000 $2.0009 10000 $2.0009	Buy Now
STMicroelectronics STFU15N80K5 MOSFET N-CH 800V 14A TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STFU15N80K5	Tube	1,000		1	1 $4.97 10 $4.97 100 $4.97 1000 $1.81638 10000 $1.81638	Buy Now
Avnet Americas	STFU15N80K5	Tube		14 Weeks	1,000	1 - 10 - 100 - 1000 $1.81638 10000 $1.70953	Buy Now
Mouser Electronics	STFU15N80K5		765			1 $2.17 10 $2.13 100 $1.83 1000 $1.81 10000 $1.81	Buy Now
STMicroelectronics	STFU15N80K5		765		1	1 $2.13 10 $2.09 100 $1.79 1000 $1.78 10000 $1.78	Buy Now
Avnet Silica	STFU15N80K5			15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip1Stop	STFU15N80K5	Tube	1,000			1 $1.59 10 $1.58 100 $1.57 1000 $1.56 10000 $1.56	Buy Now
EBV Elektronik	STFU15N80K5			15 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SIHA15N80AE-GE3 MOSFET N-CH 800V 6A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHA15N80AE-GE3	Tube	973		1	1 $3.32 10 $2.162 100 $3.32 1000 $1.13062 10000 $1.05125	Buy Now

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15N80 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Z 728 Abstract: 15N80Q IXFH15N80Q 15N80 Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings	Original	PDF	15N80Q 220TM ISOPLUS220TM 728B1 123B1 728B1 065B1 Z 728 15N80Q IXFH15N80Q 15N80
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM	Original	PDF	15N80Q O-247 O-268 125OC Figure10.
15N80Q Abstract: IXFH15N80Q Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings	Original	PDF	15N80Q 220TM ISOPLUS220TM IXFH15N80Q 728B1 123B1 728B1 065B1 15N80Q
15N80 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 14N80 IXFH 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 800 V 800 V 14 A 15 A 0.70 Ω 0.60 Ω trr < 250 ns Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	14N80 15N80 15N80 O-247
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q VDSS ID25 RDS on Q-Class = 800 V = 15 A = 0.60 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	15N80Q 15N80Q O-268 O-247 Figure10.
15N80Q Abstract: IXFH15N80Q Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings	Original	PDF	15N80Q 220TM ISOPLUS220TM 728B1 123B1 728B1 065B1 15N80Q IXFH15N80Q
15N80Q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS ISOPLUS247TM Q Class ID25 = 800 V = 13 A = 0.60 W Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Preliminary data	Original	PDF	15N80Q ISOPLUS247TM
MOSFET 11N80 Abstract: 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 HiPerFET Power MOSFET TM IXFH/IXFM 11N80 IXFH/IXFM 13N80 IXFH/IXFM 14N80 IXFH/IXFM 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	11N80 13N80 14N80 15N80 MOSFET 11N80 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs
15N80Q Abstract: 15N80 125OC IXFH14N80 IXFH15N80 Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM	Original	PDF	15N80Q O-247 O-268 125OC Figure10. 15N80Q 15N80 125OC IXFH14N80 IXFH15N80
Untitled Abstract: No abstract text available Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS 220TM Symbol Test Conditions Maximum Ratings	Original	PDF	15N80Q 220TM IXFH15N80Q 728B1
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM Q Class IXFR 15N80Q VDSS = 800 V ID25 = 13 A RDS on = 0.60 W (Electrically Isolated Back Surface) trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	Original	PDF	ISOPLUS247TM 15N80Q
Untitled Abstract: No abstract text available Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface VDSS ID25 RDS on = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings	Original	PDF	15N80Q 220TM ISOPLUS220TM 728B1 123B1 728B1 065B1
15N80Q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM	Original	PDF	15N80Q 15N80Q O-247 O-268 125OC Figure10.
IXFH15N80 Abstract: 15n80 14N80 DS965 IXFH14N80 125OC Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient	Original	PDF	IXFH14N80 IXFH15N80 14N80 15N80 125OC 728B1 IXFH15N80 15n80 14N80 DS965 IXFH14N80 125OC

Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient	Original	PDF	IXFH14N80 IXFH15N80 14N80 15N80 125OC 728B1
STF15N80K5 Abstract: 15N80K5 stf15N80k Text: 15N80K5, 15N80K5, 15N80K5, 15N80K5 N-channel 800 V, 0.3 Ω typ., 14 A SuperMESH 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — preliminary data Features TAB Type VDSS RDS on max ID 15N80K5 15N80K5 15N80K5	Original	PDF	STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 O-220FP, O-220 O-247 STB15N80K5 STF15N80K5 STP15N80K5 15N80K5 stf15N80k
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	PDF	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Untitled Abstract: No abstract text available Text: \| H \| J IXFH 15N80Q IXFT 15N80Q HiPerFET Power MOSFETs V DSS = 800 V 15 A = 0.60 Q ^D25 ” RD S o n Q-Class t rr < 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, LowQ P relim inary data sheet Symbol TestConditions V T j = 2 5 °C to 150°C	OCR Scan	PDF	15N80Q O-268
Untitled Abstract: No abstract text available Text: DIXYS AdvancedTechnical Information P Electrically Isolated Back Surface = = — DS(on) ~ o o 00 HiPerFET Power MOSFETs IXFR 15N80Q V DSS ISOPLUS247™ Q Class ^D25 V 13 A 0.60 a trr <250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	OCR Scan	PDF	15N80Q ISOPLUS247TM 247TM
Untitled Abstract: No abstract text available Text: EUXYS'^mlÊiÈÈSÈm. W SSÊœ p V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 14N80 IXFH 15N80 ^D25 800 V 14 A 800 V 15 A t„ < 250 ns DS on 0.70 £2 0.60 Q Preliminary data Symbol Test Conditions v	OCR Scan	PDF	14N80 15N80 O-247
MOSFET 11N80 Abstract: 11N80 MOSFET 14n80 ns800 13n80 Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C	OCR Scan	PDF	11N80 13N80 14N80 15N80 MOSFET 11N80 MOSFET 14n80 ns800
Untitled Abstract: No abstract text available Text: VDSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family IXFH 14N80 IXFH 15N80 p ^D 25 D S on 800 V 14 A 0.70 ß 800 V 15 A 0.60 Q trr < 250 ns P re lim in a ry data Symbol Test Conditions v vDGH T j = 25°C to 150°C	OCR Scan	PDF	14N80 15N80 O-247
diode DSDI 9 Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B	OCR Scan	PDF	O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Untitled Abstract: No abstract text available Text: □IXYS HiPerFET Power MOSFETs IXFH 14N80 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family V DSS ^D25 800 V 800 V 14 A 15 A R DS on 0.70 Q 0.60 Q trr < 250 ns Preliminary data Maximum Ratings Sym bol Test C onditions V Tj = 25°C to 150°C	OCR Scan	PDF	14N80 IXFH15N80 15N80 O-247

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Vishay Siliconix SIHP15N80AEF-GE3

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15N80 Datasheets Context Search

Z 728

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15N80Q

15N80Q

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15N80Q

IXFH15N80

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STF15N80K5

transistor 12n60c

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MOSFET 11N80

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diode DSDI 9

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