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Catalog Datasheet	MFG & Type	Document Tags	PDF
M28F201 Abstract: PLCC32 TSOP32 Text: SGS-THOMSON iiLiisinsMQes M 28F201 2 Mb 256K x 8, Bulk Erase FLASH M EM ORY 5 V ± 10% SUPPLY VOLTAGE 12V PROG RAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10^is typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Active Current: 15mAtypical	OCR Scan	M28F201 15mAtypical PLCC32 TSOP32 M28F201 TSOP32 PLCC32	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON M28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY • 5 V ± 10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10jis typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION - Active Current: 15mAtypical	OCR Scan	M28F201 10jis 15mAtypical M28F201	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan		PDF
M28F201 Abstract: 1N914 PLCC32 TSOP32 Text: S G S -T H O M S O N iiLiisinsMQes M 28F201 2 Mb 256K x 8, Chip Erase FLASH M EM O RY • ■ ■ ■ ■ ■ ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10ps typical ELECTRICAL CHIP ERASE in 1s RANGE	OCR Scan	M28F201 15mAtypical PLCC32 TSOP32 M28F201 TSOP32 1N914 PLCC32	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON llllM J ilL liM W Iie i M28W430 M28W440 VERY LOW VOLTAGE 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANIZATION MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) - Two 8K Byte or 4K Word Key Parameter	OCR Scan	M28W430 M28W440 10/15mATypical 120ns TSOP56 M28W430,	PDF
Untitled Abstract: No abstract text available Text: S G S -T H O M S O N D iILi 'irM D EÌ M28F201 2 Mb (256K x 8, Bulk Erase FLASH MEMORY • > ■ ■ > ■ ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10\|is typical ELECTRICAL CHIP ERASE in 1s RANGE	OCR Scan	M28F201 15mAtypical PLCC32 TSOP32 M28F201 TSOP32	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON D iILi 'irM D EÌ M28F201 2 Mb (256K x 8, Chip Erase FLASH MEMORY • ■ ■ > > > ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE in 1s RANGE	OCR Scan	M28F201 15mAtypical 10jaA PLCC32 TSOP32 M28F201 TSOP32	PDF