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Abstract: No abstract text available
Text: T O SH IB A MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage
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MG25Q6ES42
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode
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MG25Q6ES42
15oVJ
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mg25q6es42
Abstract: No abstract text available
Text: MG25Q6ES42 U n it in m m HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 92.7J-Q.6 • T he E lectrodes a re Isolated from Case. • 6 IGUTs a re B u ilt Into 1 P ackage. • E nhancem ent-M ode • Low S a tu ra tio n V oltage : v C E sa t = 4 0V (M ax.)
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MG25Q6ES42
2-93A3A
mg25q6es42
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Abstract: No abstract text available
Text: GT60M301 U nit in mm HIGH PO W ER SW ITCHING APPLICATIO N S. • • • • • The 3rd Generation FRD Included Between Em itter and Collector Enhancement-M ode High Speed IQBT : tf=0.25^s TY P. FRD : trr = 0.7^s (TYP.) Low Saturation Voltage : VCE(sa[) = 3.4V (MAX.)
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GT60M301
2-21F2C
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