G60T120
Abstract: IGW60T120 IGBT 1200V 60A PG-TO-247-3
Text: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications
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IGW60T120
G60T120
IGW60T120
IGBT 1200V 60A
PG-TO-247-3
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2SK2675
Abstract: FP7W90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2675 N-Channel Enhancement type OUTLINE DIMENSIONS FP7W90HVX2 Case : ITO-3P (Unit : mm) 900V 7A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2675
FP7W90HVX2)
160mJ
2SK2675
FP7W90HVX2
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2SK2674
Abstract: F7W90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2674 F7W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 7A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2674
F7W90HVX2
160mJ
2SK2674
F7W90HVX2
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Untitled
Abstract: No abstract text available
Text: Target IGW60T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers :
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IGW60T120
O-247AC
Q67040-S4521
Feb-02
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G60T120
Abstract: PG-TO-247-3-21
Text: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications
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IGW60T120
G60T120
PG-TO-247-3-21
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G60T120
Abstract: No abstract text available
Text: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications
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IGW60T120
15stances.
G60T120
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2SK2675
Abstract: 160mJ FP7W90HVX2 16mj
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2675 N-Channel Enhancement type OUTLINE DIMENSIONS FP7W90HVX2 Case : ITO-3P (Unit : mm) 900V 7A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2675
FP7W90HVX2)
160mJ
2SK2675
160mJ
FP7W90HVX2
16mj
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G60T120
Abstract: IGBT 1200V 60A IGW60T120 PG-TO-247-3
Text: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply ®
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IGW60T120
G60T120
IGBT 1200V 60A
IGW60T120
PG-TO-247-3
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MOCVD
Abstract: THOMSON-CSF Power Laser diode
Text: TH-Q1201-A / TH-Q1301-A / TH-Q1401-A 60W / 80W / 100W QUASI-CW LINEAR BAR ARRAYS DESCRIPTION The TH-Q1X01-A products are a high optical power laser diode sources for quasi-CW operation. The ‘X’ index stands for the type of diode bar: X=2, 3, 4 respectively for 60W, 80W,
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TH-Q1201-A
TH-Q1301-A
TH-Q1401-A
TH-Q1X01-A
s/100Hz)
TH-Q1401-A
MOCVD
THOMSON-CSF Power Laser diode
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transistor c1417
Abstract: TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530
Text: Welcome to Thomson-CSF Laser Diodes' site Welcome to the Web site of THOMSON-CSF Laser Diodes TLD your partner in Optoelectronic. TLD offers a large variety of High Power Laser Diodes (795 - 980nm), specific optoelectronic functions, and laser diode components
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980nm)
100ppb
transistor c1417
TH-C1720-F6
THOMSON ELECTRONIQUES TUBES
c1417
Thomson-CSF semiconductor
c1417 transistor
TH-C1720
Thomson-CSF power laser diode price list
C5520
c5530
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via vn800
Abstract: PS-2403D F-120-9A VN800 VDMOSFET 2403D AN1351 IEC801-6 L6376 VN340
Text: AN1351 APPLICATION NOTE VIPower AND BCDmultipower: MAKING LIFE EASIER WITH ST’s HIGH SIDE DRIVERS P. Laupheimer 1. ABSTRACT Industrial environments need high side switches in applications like PLC programmable logic controllers as actuators of lamps, valves and relays. STMicroelectronics is covering the complete
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AN1351
via vn800
PS-2403D
F-120-9A
VN800
VDMOSFET
2403D
AN1351
IEC801-6
L6376
VN340
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2SK2674
Abstract: F7W90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2674 F7W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 7A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2674
F7W90HVX2
160mJ
2SK2674
F7W90HVX2
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16mJ
Abstract: 2SK2675 FP7W90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2675 N-Channel Enhancement type OUTLINE DIMENSIONS FP7W90HVX2 Case : ITO-3P 900V 7A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.
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2SK2675
FP7W90HVX2)
160mJ
16mJ
2SK2675
FP7W90HVX2
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G60T120
Abstract: IGW60T120 IGBT 1200V 60A 2R210
Text: IGW60T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers :
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IGW60T120
G60T120substances.
G60T120
IGW60T120
IGBT 1200V 60A
2R210
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PABX
Abstract: Krone krone telephone cable RJ45 panel jack Krone RJ45 faceplate
Text: MHKK-C5 Series - Modular Patch Panels Category 5 Order Code MHKK-16MJ8-C5 MHKK-24MJ8-C5 MHKK-32MJ8-C5 MHKK-48MJ8-HD-C5 MHKK-48MJ8-C5 MHKK-16MJ8-S-C5 MHKK-32MJ8-S-C5 MHKK-48MJ8-S-C5 • Patch Panels exceed TIA/EIA Category 5 100 MHz performance thresholds.
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MHKK-16MJ8-C5
MHKK-24MJ8-C5
MHKK-32MJ8-C5
MHKK-48MJ8-HD-C5
MHKK-48MJ8-C5
MHKK-16MJ8-S-C5
MHKK-32MJ8-S-C5
MHKK-48MJ8-S-C5
PABX
Krone
krone telephone cable
RJ45 panel jack
Krone RJ45 faceplate
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B083D
Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP1209 C7 ,TLP1221 (C7) TOSHIBA PHOTOINTERRUPTER INFRARED LED + PHOTO IC TLP1209(C7)f TLP122KC7) COPIER, PAGE PRINTER, FACSIMILE Unit in : mm AUTOMATIC VENDING MACHINE, TERM INAL EQUIPM ENT IN BANKING FACILITIES VARIOUS POSITION DETECTION SENSOR
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TLP1209
TLP1221
TLP122KC7)
TLP1209
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QAC22
Abstract: ez 948 ic
Text: SAM S UN G E L E C T R O N I C S INC b?E D 7 T b 4 1 H E D O l b SS l VbT • SMûK ■ KM44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • The Samsung KM44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its
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KM44C4002
KM44C4002
KM44C4002-7
KM44C4002-8
KM44C4002-6
24-LEAD
QAC22
ez 948 ic
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Untitled
Abstract: No abstract text available
Text: £> THIS DRAVffiGAtOEESTCNlSiHIi CON STITUTES A PROPRIETARY DESIEN OF PACKARD ELECTRIC DIVISHSI ftMJ IS NOT TO BE OUPLICflTED OR REPRDDÜCED WITH OUT AUTHORITY CF PACKARD ELECTHEC DIVIS10M. m u . REVISION RECORD 1209 2435 31MR89 12077907 WAS SEPARATE "E" SIZE;
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DIVIS10M.
31MR89
J22S2Ã
l2077SÃ
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RCD snubber
Abstract: calculation of IGBT snubber IGBT snubber for inductive load RC VOLTAGE CLAMP snubber circuit chokhawala carroll snubber design tool snubber resistance of IGBT IGBT snubber RCD snubber for igbt 150a gto in electronic rcd snubber
Text: Snubber C onsiderations for IG BT A pplications Yi Zhang, Saed Sobhani, Rahul Chokhawala International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 Abstract: Snubber circuits can be used to protect fast switching IGBTs from the turn-on and turn-off voltage
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AN-983.
RCD snubber
calculation of IGBT snubber
IGBT snubber for inductive load
RC VOLTAGE CLAMP snubber circuit
chokhawala carroll snubber design tool
snubber resistance of IGBT
IGBT snubber
RCD snubber for igbt
150a gto
in electronic rcd snubber
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Untitled
Abstract: No abstract text available
Text: KM44C4002A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4002A/AL/ALL/ASL is a high speed CMOS 4,194,304 b i t x 4 Dynamic Random Access Memory. Its design is optimized for high
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KM44C4002A/AL/ALL/ASL
KM44C4002A/AL/ALL/ASL
110ns
130ns
150ns
24-LEAD
300MIL,
t5h4142
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Untitled
Abstract: No abstract text available
Text: KM44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its Design is optimized for high performance applications
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KM44C4002
KM44C4002
24-LEAD
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Untitled
Abstract: No abstract text available
Text: IBM13N16644HC IBM13N16734HC 16M x 64/72 2 Bank Unbuffered SDRAM Module Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only - Operation: Burst Read and Write or Multiple
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IBM13N16644HC
IBM13N16734HC
168-Pin
16Mx64/72
PC100
66MHz
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2dua
Abstract: No abstract text available
Text: KM44C4002A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC K M 44C 4002A /A L/A LL/A S L-5 50ns 13ns 90ns K M 44C 4002A /A L/A LL/A S L-6 60ns 15ns 110ns K M 44C 4002A /A L/A LL/A S L-7
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KM44C4002A/AL/ALL/ASL
110ns
130ns
150ns
KM44C4002A/AL/ALL/ASL
24-LEAD
300MIL,
400MIL)
2dua
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