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    16N90 Search Results

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    16N90 Price and Stock

    STMicroelectronics STB16N90K5

    MOSFET N-CH 900V 15A D2PAK
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    DigiKey STB16N90K5 Digi-Reel 1,360 1
    • 1 $6.52
    • 10 $4.385
    • 100 $6.52
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    STB16N90K5 Cut Tape 1,360 1
    • 1 $6.52
    • 10 $4.385
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    STB16N90K5 Reel 1,000 1,000
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    Avnet Americas STB16N90K5 Ammo Pack 1
    • 1 $4.84
    • 10 $4.35
    • 100 $3.7
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    STB16N90K5 Reel 14 Weeks 1,000
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    Mouser Electronics STB16N90K5 996
    • 1 $5.71
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    • 100 $3
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    Newark STB16N90K5 Cut Tape 3,200 1
    • 1 $3.25
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    STMicroelectronics STB16N90K5 996 1
    • 1 $5.6
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    Avnet Silica STB16N90K5 1,000 15 Weeks 1,000
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    EBV Elektronik STB16N90K5 15 Weeks 1,000
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    STMicroelectronics STF16N90K5

    MOSFET N-CH 900V 15A TO220FP
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    DigiKey STF16N90K5 Tube 30 1
    • 1 $6.2
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    Avnet Americas STF16N90K5 Bulk 16 Weeks, 3 Days 1
    • 1 $6.38
    • 10 $6.31
    • 100 $4.56
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    STF16N90K5 Tube 14 Weeks 1,000
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    • 1000 $1.95443
    • 10000 $1.8381
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    Mouser Electronics STF16N90K5 968
    • 1 $6.02
    • 10 $6.02
    • 100 $3.07
    • 1000 $2.44
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    Newark STF16N90K5 Bulk 1,331 1
    • 1 $2.99
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    STMicroelectronics STF16N90K5 968 1
    • 1 $5.9
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    • 100 $3.01
    • 1000 $2.93
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    TME STF16N90K5 48 1
    • 1 $5.68
    • 10 $5.68
    • 100 $4.04
    • 1000 $3.98
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    Avnet Silica STF16N90K5 1,150 15 Weeks 50
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    Chip1Stop STF16N90K5 Tube 830
    • 1 $2.65
    • 10 $2.64
    • 100 $2.62
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    EBV Elektronik STF16N90K5 15 Weeks 50
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    IXYS Corporation IXFK16N90Q

    MOSFET N-CH 900V 16A TO264AA
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    DigiKey IXFK16N90Q Tube 25
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    • 100 $9.4708
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    IXYS Corporation IXFH16N90Q

    MOSFET N-CH 900V 16A TO247AD
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    DigiKey IXFH16N90Q Tube
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    ComSIT USA IXFH16N90Q 11
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    IXYS Corporation IXFT16N90Q

    MOSFET N-CH 900V 16A TO268
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    DigiKey IXFT16N90Q Tube
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    16N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V ID25 = 16 A RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings


    Original     		PDF 16N90Q 16N90Q O-247 O-268 O-264 O-268AA

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS = 900 V ID25 = 16 A RDS on = 0.65 Ω IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		PDF 16N90Q O-247 728B1

    IXFH16N90Q

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V = 16 A ID25 RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings


    Original     		PDF 16N90Q 16N90Q O-247 O-268 O-268 IXFH16N90Q

    16N90

    Abstract: TO-264 weight 16N90Q
    Text: HiPerFETTM Power MOSFETs VDSS = 900 V ID25 = 16 A RDS on = 0.65 Ω IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		PDF 16N90Q O-247 O-247 O-264 728B1 16N90 TO-264 weight 16N90Q

    TO264 footprint

    Abstract: 16N90Q
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V = 16 A ID25 RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings


    Original     		PDF 16N90Q TO264 footprint 16N90Q

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V = 16 A ID25 RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings


    Original     		PDF 16N90Q O-247

    16N90

    Abstract: IXFH16N90 IXFX16N90
    Text: 16N90 16N90 HiPerFETTM Power MOSFETs VDSS = 900 V ID25 = 16 A RDS on = 0.65 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr £ 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH16N90 IXFX16N90 247TM 247TM 16N90 IXFH16N90 IXFX16N90

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    16N90

    Abstract: No abstract text available
    Text: 16N90 16N90 HiPerFET Power MOSFETs V DSS I D25 D DS on N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family = 900 V = 16 A = 0.65 Q trr < 200 ns Prelim inary data Symbol V DSS v™ V GS v GS* Test Conditions T, = 25°C to 150°C T,J = 25°C to 150°C;’ RGS


    OCR Scan     		PDF IXFH16N90 IXFX16N90 O-247 247TM 16N90

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HiPerFET V DSS 16N90 16N90 Power MOSFETs ^D25 R DS on N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family = 900 V = 16 A = 0.65 Q t < 200 ns Preliminarydata Symbol TestConditions V T j = 25°C to 150°C T j = 25°C to 150°C; RGS = 1 M£i


    OCR Scan     		PDF IXFH16N90 IXFX16N90 -247A

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50