Untitled
Abstract: No abstract text available
Text: F213 Rev 18OCT13 HSEC8–125–01–L–DV–A HSEC8–149–01–L–DV–A (0,80 mm) .0315" HSEC8-DV SERIES VERTICAL EDGE RATE CARD SOCKET Mates with (1,60 mm) .062" ™ SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?HSEC8-DV
|
Original
|
18OCT13)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA923EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.054 at VGS = - 4.5 V - 4.5a 0.070 at VGS = - 2.5 V - 4.5a 0.104 at VGS = - 1.8 V - 4.5a 0.165 at VGS = - 1.5 V - 1.5 • Halogen-free According to IEC 61249-2-21
|
Original
|
SiA923EDJ
SC-70
2002/95/EC
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET
|
Original
|
SiA911ADJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
SIA915DJ
Abstract: No abstract text available
Text: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
SiA915DJ
SC-70
2002/95/EC
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA921EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a Qg (Typ.) 4.9 nC PowerPAK SC-70-6 Dual 1 S1 2 G1 3 D2 D1 D1 6 • Load Switch, PA Switch and Battery Switch for Portable
|
Original
|
SiA921EDJ
SC-70-6
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA527DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel - 12 RDS(on) () Max. 0.029 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.041 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V
|
Original
|
SiA527DJ
SC-70-6
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA936EDJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () MAX. ID (A) 0.034 at VGS = 4.5 V 4.5a 0.037 at VGS = 3.7 V 4.5a 0.045 at VGS = 2.5 V 4.5a • TrenchFET Power MOSFET • Thermally enhanced PowerPAK® SC-70 package
|
Original
|
SiA936EDJ
SC-70
SC-70-6L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA910EDJ Vishay Siliconix Dual N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () ID (A) 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®
|
Original
|
SiA910EDJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA513DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) (Ω) Qg (Typ.) a 0.060 at VGS = 4.5 V 4.5 0.092 at VGS = 2.5 V 4.5a 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a
|
Original
|
SiA513DJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA537EDJ www.vishay.com Vishay Siliconix N-Channel 12 V D-S and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) () MAX. ID (A) 0.028 at VGS = 4.5 V 4.5 a 0.033 at VGS = 2.5 V 4.5 a 0.042 at VGS = 1.8 V 4.5 a 0.054 at VGS = -4.5 V
|
Original
|
SiA537EDJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET
|
Original
|
SiA811ADJ
SC-70
SC-70-6electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA817EDJ Vishay Siliconix P-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.065 at VGS = - 10 V - 4.5a 0.080 at VGS = - 4.5 V - 4.5a 0.092 at VGS = - 3.7 V - 4.5a 0.125 at VGS = - 2.5 V
|
Original
|
SiA817EDJ
SC-70-6
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA931DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.065 at VGS = - 10 V - 4.5a 0.080 at VGS = - 6 V - 4.5a 0.100 at VGS = - 4.5 V - 4.5 Qg (Typ.) 4.1 nC a PowerPAK SC-70-6 Dual 1 S1 APPLICATIONS
|
Original
|
SiA931DJ
SC-70-6
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual
|
Original
|
SiA929DJ
SC-70-6
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET
|
Original
|
SiA811DJ
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
VISHAY DiodE 400
Abstract: VS-EMG050J60N
Text: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • • EMIPAK2 PRODUCT SUMMARY NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor
|
Original
|
VS-EMG050J60N
E78996
VS-EMG050J60N
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VISHAY DiodE 400
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA906EDJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
SiA906EDJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA911EDJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.101 at VGS = - 4.5 V - 4.5a 0.141 at VGS = - 2.5 V - 4.5a 0.192 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21 Definition
|
Original
|
SiA911EDJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA920DJ Vishay Siliconix Dual N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A)a 0.027 at VGS = 4.5 V 4.5 0.031 at VGS = 2.5 V 4.5 0.036 at Vgs = 1.8 V 4.5 0.047 at Vgs = 1.5 V 4.5 0.110 at Vgs = 1.2 V 1.5 • Halogen-free According to IEC 61249-2-21
|
Original
|
SiA920DJ
SC-70
2002/95/EC
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
SMMA511DJ
Abstract: No abstract text available
Text: New Product SMMA511DJ Vishay Siliconix N- and P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY N-CHANNEL VDS (V) P-CHANNEL • High Quality Manufacturing Process Using SMM Process Flow 12 - 12 RDS(on) (Ω) at VGS = ± 4.5 V 0.040 0.070 • Halogen-free According to IEC 61249-2-21
|
Original
|
SMMA511DJ
SC-70
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SMMA511DJ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA923EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.054 at VGS = - 4.5 V - 4.5a 0.070 at VGS = - 2.5 V - 4.5a 0.104 at VGS = - 1.8 V - 4.5a 0.165 at VGS = - 1.5 V - 1.5 • Halogen-free According to IEC 61249-2-21
|
Original
|
SiA923EDJ
SC-70
2002/95/EC
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiA911DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.094 at VGS = - 4.5 V - 4.5a 0.131 at VGS = - 2.5 V - 4.5a 0.185 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
|
Original
|
SiA911DJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VO617A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS FEATURES A 1 4 C C 2 3 E • • • • • • • • • • • • Operating temperature from -55 °C to +110 °C Good CTR linearity depending on forward current
|
Original
|
VO617A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA813DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Qg 0.094 at VGS = - 4.5 V ID (A)a - 4.5 0.131 at VGS = - 2.5 V - 4.5 4.9 nC 0.185 at VGS = - 1.8 V - 4.5 VDS (V) RDS(on) (Ω) - 20 • Halogen-free According to IEC 61249-2-21
|
Original
|
SiA813DJ
SC-70
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|