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Vishay Siliconix SIA811ADJ-T1-GE3 MOSFET P-CH 20V 4.5A PPAK SC70-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIA811ADJ-T1-GE3	Cut Tape	2,751		1	1 $0.81 10 $0.504 100 $0.81 1000 $0.22442 10000 $0.22442	Buy Now
	SIA811ADJ-T1-GE3	Digi-Reel	2,751		1	1 $0.81 10 $0.504 100 $0.81 1000 $0.22442 10000 $0.22442	Buy Now
	SIA811ADJ-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.1929	Buy Now
Vishay Intertechnologies SIA811ADJ-T1-GE3 P-CHANNEL 20-V (D-S) MOSFET W/SCHOTTKY - Tape and Reel (Alt: SIA811ADJ-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIA811ADJ-T1-GE3	Reel		18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.1476	Buy Now
Mouser Electronics	SIA811ADJ-T1-GE3		2,769			1 $0.63 10 $0.427 100 $0.291 1000 $0.206 10000 $0.154	Buy Now
TTI	SIA811ADJ-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.156	Buy Now
TME	SIA811ADJ-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.273	Get Quote
EBV Elektronik	SIA811ADJ-T1-GE3			22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIA811ADJ Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIA811ADJ-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A PPAK SC70-6		Original	PDF

SIA811ADJ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	PDF	SiA811ADJ SC-70 SC-70-6electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SC-70-6 Abstract: SiA811ADJ-T1-GE3 Text: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	PDF	SiA811ADJ SC-70 SC-70-6 11-Mar-11 SiA811ADJ-T1-GE3
Untitled Abstract: No abstract text available Text: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	PDF	SiA811ADJ SC-70 SC-70-6emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
68995 Abstract: 6852 8829 mosfet U 8047 8821 9114 AN609 Text: SiA811ADJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	SiA811ADJ AN609, 02-Oct-08 68995 6852 8829 mosfet U 8047 8821 9114 AN609
part marking information vishay HD 1 Abstract: No abstract text available Text: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	PDF	SiA811ADJ SC-70 SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 part marking information vishay HD 1
SiA811ADJ-T1-GE3 Abstract: SiA811DJ SiA811DJ-T1-GE3 SiA811ADJ Text: Specification Comparison Vishay Siliconix SiA811ADJ vs. SiA811DJ Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode PowerPAK SC-70 Identical Part Number Replacements: SiA811ADJ-T1-GE3 replaces SiA811DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	PDF	SiA811ADJ SiA811DJ SC-70 SiA811ADJ-T1-GE3 SiA811DJ-T1-GE3 Curren31 02-Dec-08
Untitled Abstract: No abstract text available Text: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	PDF	SiA811ADJ SC-70 SC-70-6 11-Mar-11
SC-70-6 Abstract: SiA811ADJ-T1-GE3 S-82482-Rev Text: New Product SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.116 at VGS = - 4.5 V - 4.5 0.155 at VGS = - 2.5 V - 4.5 0.205 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET	Original	PDF	SiA811ADJ SC-70 SC-70-6 18-Jul-08 SiA811ADJ-T1-GE3 S-82482-Rev
SiA811ADJ Abstract: No abstract text available Text: SPICE Device Model SiA811ADJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiA811ADJ 18-Jul-08
NX3008 Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N Text: Advanced cross reference list DFN* MOSFETs DFN: discrete flat no-leads in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1	Original	PDF	AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	PDF	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:	Original	PDF	SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402
SiA427DJ Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:	Original	PDF	SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836