1MX16, Search Results

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IBM 1MX1650EDO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	1MX1650EDO		2,826			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IBM 1MX16-50EDOTSOP5.0V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	1MX16-50EDOTSOP5.0V		2,826			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IBM 1MX16-50EDOTSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	1MX16-50EDOTSOP		2,826			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor 1MX16-45EDOTSOP1KREF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	1MX16-45EDOTSOP1KREF		125			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor 1MX16-50EDOSOJ1KREF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	1MX16-50EDOSOJ1KREF		19			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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1MX16, Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
1MX16Y3VTW		StarRam	1 x 16 SYNCHRONOUS DRAM		Original	PDF

1MX16, Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
microtek inverter circuit Abstract: SST28F040 data circuit schematics satellite connector PMC3370 u34 c634 12vdc to 120vac inverter schematic diagram smd diode L48 R735-R738 DS1834AS smd diode code L49 Text: PM3575 APPLICATION NOTE PMC-981057 ISSUE 1 EXACT 24+2 REFERENCE DESIGN PM3575 EXACT 24 x 10/100 + 2 x 1000 ETHERNET SWITCH REFERENCE DESIGN ISSUE 1: FEBRUARY 1999 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE PM3575	Original	PM3575 PMC-981057 microtek inverter circuit SST28F040 data circuit schematics satellite connector PMC3370 u34 c634 12vdc to 120vac inverter schematic diagram smd diode L48 R735-R738 DS1834AS smd diode code L49	PDF
IBM0316809CT3D80 Abstract: IBM0316169C IBM0316809C Text: Discontinued 12/98 - last order; 9/99 last ship . IBM0316409C IBM0316809C IBM0316169C IBM03164B9C 16Mb Synchronous DRAM-Die Revision D Features • Multiple Burst Read with Single Write Option • High Performance: -80 CL=3 -360 CL=3 -10 CL=3 Units 125 100	Original	IBM0316409C IBM0316809C IBM0316169C IBM03164B9C cycles/64ms IBM0316809CT3D80 IBM0316169C IBM0316809C	PDF
Untitled Abstract: No abstract text available Text: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	OCR Scan	KMM466S104CT_ 144pin KMM466S104CT 1Mx64 1Mx16 400mil 144-pin	PDF
Untitled Abstract: No abstract text available Text: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	OCR Scan	KMM366S104CTL KMM366S104CTL 1Mx64 1Mx16 400mil 166-pin 168-pin	PDF
si1816 Abstract: No abstract text available Text: GM71 V S 18160C(CL) 1Mx16,3.3V, 1K Ref, FP The G M 71V (S )1 8 16 0C /C L is the new generation dynamic RAM organized 1,048,576 x 16 bit. G M 71V(S) 18160C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process	OCR Scan	18160C 1Mx16 18160C/CL GM71V 400mil 100us. 100us, si1816	PDF
XC5L Abstract: No abstract text available Text: KMM466S204CT 144pin SDRAM SODIMM KMM466S204CT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S204CT Is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The SamsunQ	OCR Scan	KMM466S204CT KMM466S204CT 144pin 2Mx64 1Mx16 KMM486S204CT 400mII 144-pin XC5L	PDF
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16,1K Refresh, 5V G E N E R A L DESCRIPTION FE A T U R E S The Samsung KMM 364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KM M 364C124AJ consists of four C M O S	OCR Scan	KMM364C124AJ KMM364C124AJ 1Mx64 1Mx16 364C124AJ 1Mx16bit 42-pin 400mil 48pin	PDF
Untitled Abstract: No abstract text available Text: SIEMENS Summary of Types Summary of Types Type \| Ordering \| Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70	OCR Scan	P-SOJ-26/20-5	PDF
SM71C Abstract: No abstract text available Text: GM71C S 18163C(CL) 1Mx16, 5V, 1K Ref, EDO Features T h e G M 7 1 C (S )1 8 1 6 3 C /C L is th e n ew generation dynamic RAM organized 1,048,576 x 16 bit. G M 71C (S )18163C /C L has realized higher density, higher perform ance and various functions by utilizing advanced CM OS process	OCR Scan	GM71C 18163C 1Mx16, 18163C/CL 42pin 100us. 100us, SM71C	PDF
Untitled Abstract: No abstract text available Text: IITSU February 1997 Revision 1.0 data sheet ESA2UN321 1/4 -(60/70)(J/T)(G/S)-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN321(1/4)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3211 supports	OCR Scan	ESA2UN321 32bits, 72-pin, ESA2UN3211 ESA2UN3214 MB811 72-pin 144-pin 168-pin	PDF
edo ram 4Mx16 Abstract: 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16 Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DRAM Part Numbering g D RAM Module Part Numbering 12 D RAM Ordering Information 14 DRAM Module Ordering Information 15 3. DATA SHEETS DRAM 16M-bit GM 71C S 16400C(CL) 4Mx4, 5V, 4K Ref, FP	OCR Scan	16M-bit 16400C 17400C 16403C 17403C 16400HG edo ram 4Mx16 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16	PDF
0316169CT3D Abstract: No abstract text available Text: I = = = ¥ = = = = IB M 0 3 1 6 4 0 9 C - = IB M 0 3 1 6 8 0 9 C IB M 0 3 1 6 1 6 9 C IB M 0 3 1 6 4 B 9 C P relim inary 1M x16, -80; -360 16M b S yn ch ro n o u s D R A M -D ie R evision D Features • Multiple Burst Read with Single Write Option • High Performance:	OCR Scan	400nA- 1Mx16 0316169CT3D	PDF
JRC 45600 Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541 Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES	OCR Scan	ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541	PDF