Untitled
Abstract: No abstract text available
Text: M53210124CE2/CJ2 DRAM MODULE M53210124CE2/CJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124C is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124C consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or
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M53210124CE2/CJ2
M53210124CE2/CJ2
1Mx16,
M53210124C
1Mx32bits
M53210124C
1Mx16bits
42-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: Preliminary M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or
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M53210124DE2/DJ2
1Mx16,
M53210124D
1Mx32bits
1Mx16bits
42-pin
72-pin
M53210124DE2/DJ2
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Untitled
Abstract: No abstract text available
Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx32 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100BTWG Series DESCRIPTION The Hynix HYM4V33100BTWG Series are 1Mx32bits Synchronous DRAM Modules. The modules are composed of one 1Mx32bits CMOS Synchronous DRAMs in 400mil 86pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one
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1Mx32
PC133
HYM4V33100BTWG
HYM4V33100BTWG
1Mx32bits
1Mx32bits
400mil
86pin
132pin
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K4F151611D
Abstract: No abstract text available
Text: M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or
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M53210124DE2/DJ2
M53210124DE2/DJ2
1Mx16,
M53210124D
1Mx32bits
M53210124D
1Mx16bits
42-pin
72-pin
K4F151611D
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KMM5321200C2W
Abstract: KMM5321200C2WG
Text: DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE
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KMM5321200C2W/C2WG
KMM5321200CW/CWG
KMM5321200C2W/C2WG
1Mx16,
KMM5321200C2W
1Mx32bits
1Mx16bits
KMM5321200C2WG
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1MX16
Abstract: KMM5321200C2W KMM5321200C2WG
Text: DRAM MODULE KMM5321200C2W/C2WG 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision .
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KMM5321200C2W/C2WG
1Mx32
1MX16
KMM5321200CW/CWG
KMM5321200C2W/C2WG
1Mx16,
KMM5321200C2W
KMM5321200C2WG
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KMM5321204C2W
Abstract: KMM5321204C2WG
Text: DRAM MODULE KMM5321204C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE
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KMM5321204C2W/C2WG
KMM5321200CW/CWG
KMM5321200C2W/C2WG
KMM5321204C2W/C2WG
1Mx16
KMM5321204C2W
1Mx32bits
1Mx16bits
KMM5321204C2WG
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1MX16
Abstract: KMM5321204C2W KMM5321204C2WG
Text: DRAM MODULE KMM5321204C2W/C2WG 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321204C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision .
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KMM5321204C2W/C2WG
1Mx32
1MX16
KMM5321200CW/CWG
KMM5321200C2W/C2WG
KMM5321204C2W/C2WG
1Mx16
KMM5321204C2W
KMM5321204C2WG
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Untitled
Abstract: No abstract text available
Text: KMM332F104BT-L KMM332F124BT-L DRAM MODULE KMM332F104BT-L & KMM332F124BT-L Fast Page with EDO Mode 1M x 32 DRAM SO DIM M using 1M X 16, 1K & 4K Ref., 3.3V, Low pow er/Self-R efresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F10 2 4BT is a 1Mx32bits Dynamic
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KMM332F104BT-L
KMM332F124BT-L
KMM332F104BT-L
KMM332F124BT-L
KMM332F10
1Mx32bits
332F10
1Mx16bits
44-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: HYM41V33100BTWG 1Mx32, 1Mx32 based, PC133 D E S C R I PT I ON The H ynix H Y M 4 V 3 3 10O BT W G CMOS Syn chronous DRAMs Series in 4 0 0 m i l are 1Mx32bits 86pin TSOP-II 0.1uF decoupling capacitors per each SDRAM The Hyundai H Y M 4 V 3 3 1OOBTWG memory. The Hyundai
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OCR Scan
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HYM41V33100BTWG
1Mx32,
1Mx32
PC133
86pin
1Mx32bits
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Untitled
Abstract: No abstract text available
Text: KMM5321204C2W/C2WG DRAM MODULE 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS KMM5321204C2W/C2WG DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision .
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OCR Scan
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KMM5321204C2W/C2WG
1Mx32
1MX16
KMM5321200CW/CWG
KMM5321200C2W/C2WG
1Mx16
KMM5321204C2W
1Mx32bits
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5321204C2W/C2WG 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321204C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision .
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OCR Scan
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KMM5321204C2W/C2WG
1Mx32
1MX16
KMM5321200CW/CWG
KMM5321200C2W/C2WG
KMM5321204C2W/C2WG
1Mx16
KMM5321204C2W
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